公开(公告)号：US07384867B2

公开(公告)日：2008-06-10

申请号：US11206491

申请日：2005-08-18

申请人： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

发明人： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

摘要翻译： 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：US20060148253A1

公开(公告)日：2006-07-06

申请号：US11368191

申请日：2006-03-03

申请人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Mosely ,  Mei Chang

发明人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Mosely ,  Mei Chang

IPC分类号： H01L21/44 ,  H01L21/461

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/02063 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871

摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

公开(公告)号：US07049226B2

公开(公告)日：2006-05-23

申请号：US10865042

申请日：2004-06-10

申请人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Craig Mosely ,  Mei Chang

发明人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Craig Mosely ,  Mei Chang

IPC分类号： H01L21/4763

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/02063 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871

摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

摘要翻译： 提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。 通过原子层沉积来沉积氮化钽。 从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。 任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。 可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

公开(公告)号：US07026238B2

公开(公告)日：2006-04-11

申请号：US10052681

申请日：2002-01-17

申请人： Ming Xi ,  Paul Frederick Smith ,  Ling Chen ,  Michael X. Yang ,  Mei Chang ,  Fusen Chen ,  Christophe Marcadal ,  Jenny C. Lin

发明人： Ming Xi ,  Paul Frederick Smith ,  Ling Chen ,  Michael X. Yang ,  Mei Chang ,  Fusen Chen ,  Christophe Marcadal ,  Jenny C. Lin

IPC分类号： H01L21/4763

CPC分类号： H01L21/76804 ,  C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

公开(公告)号：US06309713B1

公开(公告)日：2001-10-30

申请号：US08884811

申请日：1997-06-30

申请人： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

发明人： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

IPC分类号： H05H124

CPC分类号： H01L21/76843 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/66583

摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

公开(公告)号：US20080008823A1

公开(公告)日：2008-01-10

申请号：US11844125

申请日：2007-08-23

申请人： LING CHEN ,  Mei Chang

发明人： LING CHEN ,  Mei Chang

IPC分类号： C23C16/00

CPC分类号： H01L21/76849 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28562 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49155

摘要： In one embodiment, a method for forming a barrier material on a substrate is provided which includes exposing a dielectric layer on the substrate to a plasma during a preclean process, wherein the dielectric layer contains a feature having sidewalls and a bottom surface, and depositing a tungsten-containing barrier material containing tungsten nitride on the sidewalls and the bottom surface of the feature during a cyclic layer deposition process. The method further provides depositing a metal-containing seed layer on the tungsten-containing barrier material and depositing a metal-containing layer over the metal-containing seed layer to fill the feature. In another embodiment, the method provides conducting the cyclic layer deposition process within a process chamber having an expanding channel centralized above a substrate support and having a bottom surface sized and shaped to substantially cover the substrate, and sequentially exposing the substrate to precursor gases flowing from the expanding channel during the cyclic layer deposition process.

摘要翻译： 在一个实施例中，提供了一种在衬底上形成阻挡材料的方法，其包括在预清洗工艺期间将衬底上的电介质层暴露于等离子体，其中介电层包含具有侧壁和底表面的特征， 在循环层沉积工艺期间在该特征的侧壁和底表面上含有氮化钨的含钨阻挡材料。 该方法进一步提供在含钨屏障材料上沉积含金属种子层并在含金属种子层上沉积含金属层以填充该特征。 在另一个实施方案中，该方法提供了在处理室内进行循环层沉积工艺，其具有集中在衬底支撑件上方的扩展通道，并具有大小和形状以基本上覆盖衬底的底表面，并且将衬底依次暴露于从 在循环层沉积过程中的扩展通道。

公开(公告)号：US07262133B2

公开(公告)日：2007-08-28

申请号：US10741824

申请日：2003-12-19

申请人： Ling Chen ,  Mei Chang

发明人： Ling Chen ,  Mei Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/76849 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28562 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49155

摘要： A method for depositing a cap layer over a metal-containing interconnect is provided. In one aspect, the cap layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. In one aspect, the cap layer comprises tantalum nitride. The cap layer provides good barrier and adhesive properties, thereby enhancing the electrical performance and reliability of the interconnect.

摘要翻译： 提供了一种用于在含金属互连上沉积覆盖层的方法。 在一个方面，通过引入含金属化合物的脉冲，接着是含氮化合物的脉冲来形成盖层。 在一个方面，盖层包括氮化钽。 盖层提供良好的阻隔性和粘合性，从而增强互连的电性能和可靠性。

公开(公告)号：US06319728B1

公开(公告)日：2001-11-20

申请号：US09092477

申请日：1998-06-05

申请人： Mohan K. Bhan ,  Ling Chen ,  Bo Zheng ,  Justin Jones ,  Seshadri Ganguli ,  Timothy Levine ,  Samuel Wilson ,  Mei Chang

发明人： Mohan K. Bhan ,  Ling Chen ,  Bo Zheng ,  Justin Jones ,  Seshadri Ganguli ,  Timothy Levine ,  Samuel Wilson ,  Mei Chang

IPC分类号： H01L2144

CPC分类号： H01L21/76862 ,  C23C16/18 ,  C23C16/56 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76876 ,  H01L21/76886

摘要： A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the “clean” or treated copper seed layer.

摘要翻译： 一种降低晶片上铜层电阻率的方法。 在晶片上的一层材料上形成含水分的铜种籽层。 铜种子层通过来自等离子体的热或离子来处理以退出水分，从而降低其电阻率并改善其与下层的粘附性。 然后将无水分的铜层沉积在“干净”或处理的铜籽晶层的顶部。

公开(公告)号：US06291343B1

公开(公告)日：2001-09-18

申请号：US09008796

申请日：1998-01-20

申请人： Jennifer Tseng ,  Mei Chang ,  Ling Chen ,  David C. Smith ,  Karl A. Littau ,  Chyi Chern ,  Marvin Liao

发明人： Jennifer Tseng ,  Mei Chang ,  Ling Chen ,  David C. Smith ,  Karl A. Littau ,  Chyi Chern ,  Marvin Liao

IPC分类号： H01L2124

CPC分类号： H01L21/76856 ,  C23C16/0245 ,  C23C16/34 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76841 ,  H01L21/76862 ,  H01L21/76864

摘要： A layer of material is formed on a substrate in a partially formed integrated circuit on a wafer. The substrate undergoes a plasma annealing, during which the substrate is bombarded with ions. The plasma annealing may be performed by exposing the substrate to plasma that is generated from a nitrogen containing gas which is infused with energy. After the substrate is plasma annealed, a layer of a refractory metal nitride is deposited on the substrate. The layer of refractory metal nitride is then bombarded with a first set of ions. The bombardment of the refractory metal by the first set of ions may be achieved by performing a plasma annealing. The refractory metal nitride may be further bombarded by a second set of ions.

摘要翻译： 在晶片上的部分形成的集成电路中的衬底上形成一层材料。 衬底经历等离子体退火，在此期间衬底被离子轰击。 等离子体退火可以通过将衬底暴露于由注入能量的含氮气体产生的等离子体来进行。 在对衬底进行等离子体退火之后，在衬底上沉积难熔金属氮化物层。 然后用第一组离子轰击难熔金属氮化物层。 可以通过进行等离子体退火来实现第一组离子对难熔金属的轰击。 耐火金属氮化物可以被第二组离子进一步轰击。

公开(公告)号：US6099649A

公开(公告)日：2000-08-08

申请号：US996735

申请日：1997-12-23

申请人： John Vincent Schmitt ,  Ling Chen ,  George Michael Bleyle ,  Yu Cong ,  Alfred Mak ,  Mei Chang

发明人： John Vincent Schmitt ,  Ling Chen ,  George Michael Bleyle ,  Yu Cong ,  Alfred Mak ,  Mei Chang

IPC分类号： B01D8/00 ,  B01D53/00 ,  B01D53/72 ,  C23C16/44 ,  C30B25/14 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45561 ,  B01D53/002 ,  B01D53/72 ,  C23C16/4412 ,  C30B25/14 ,  H01J37/32834

摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

摘要翻译： 热阱从CVD工艺的排气流转换未反应的有机金属膜前体。 转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。 热阱下游的冷阱将废气排出的废水冻结。 由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。