公开(公告)号：US07026680B2

公开(公告)日：2006-04-11

申请号：US10790760

申请日：2004-03-03

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01L28/55 ,  H01L27/0805

摘要： An integrated thin film capacitive element comprising a dielectric material of the specified composition that exhibits increased voltage tunability of capacitance and capacitance density and a production process thereof are disclosed. The integrated thin film capacitive element comprises a capacitor structure constituted from a lower electrode, a dielectric layer comprised of the high dielectric constant material represented by the formula: (Ba(1-y)(1-x)Sr(1-y)xYy)Ti1+zO3+δ with the range 0

摘要翻译： 公开了一种集成的薄膜电容元件，其包括具有增加的电容和电容密度的电压可调谐性的特定组成的介电材料及其制造方法。 集成薄膜电容元件包括由下电极构成的电容器结构，由下式表示的高介电常数材料构成的介电层：（Ba（1-y）（1-x）） Sr 1（1-y）x Y y y）Ti 1 + z O 3 +δ，其范围为0 （1-y）（1-x）+ Sr（1-y）x <1，0.007

公开(公告)号：US07745924B2

公开(公告)日：2010-06-29

申请号：US12129889

申请日：2008-05-30

申请人： Takeshi Shioga ,  Masataka Mizukoshi ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Masataka Mizukoshi ,  Kazuaki Kurihara

IPC分类号： H01L23/485

CPC分类号： H05K1/162 ,  H01G9/025 ,  H01L23/49822 ,  H01L23/642 ,  H01L24/48 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30107 ,  H05K3/4069 ,  H05K3/4644 ,  H05K2201/09509 ,  H05K2201/09763 ,  H05K2203/0315 ,  Y10S438/957 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： As for electrode pads for a semiconductor integrated circuit element, some of electrode pads for signal transmission are coupled to Ti films. Others of the electrode pads for signal transmission are coupled to electrode pads through wiring routed in multilayer wiring. Electrode pads for power supply are coupled to electrode pads to which power lines at potentials different from each other are coupled through wiring. The electrode pads are also coupled to Al foils (anodes). Electrode pads for grounding are coupled to electrode pads to which ground lines are coupled through wiring. The electrode pads are also coupled to conductive polymer films (cathodes).

摘要翻译： 对于用于半导体集成电路元件的电极焊盘，用于信号传输的一些电极焊盘耦合到Ti膜。 用于信号传输的其他电极焊盘通过布线在多层布线中的布线耦合到电极焊盘。 用于电源的电极焊盘耦合到电极焊盘，电极彼此不同的电力线通过布线耦合到电极焊盘。 电极焊盘也耦合到铝箔（阳极）。 用于接地的电极焊盘耦合到接地线通过布线耦合到的电极焊盘。 电极焊盘也耦合到导电聚合物膜（阴极）。

公开(公告)号：US20090007405A1

公开(公告)日：2009-01-08

申请号：US11790732

申请日：2007-04-27

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： H01G7/00

CPC分类号： H01L27/0805 ,  H01L21/76877 ,  H01L24/11 ,  H01L28/40 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed on a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).

摘要翻译： 电容器装置包括由形成在基板（10）上的下电极（12），电介质膜（14）和上电极（16）构成的电容器Q; 覆盖电容器Q的绝缘膜（18）; 形成在所述上电极（16）的连接部（16a）上的绝缘膜（18）中的第一接触孔（18a） 用于防止形成在第一接触孔（18a）中的焊料扩散的电极焊盘（20）; 和与电极焊盘（20）电连接的焊料凸点（22），上部电极（16）具有从电介质膜（14）突出的突出部（16a），并与第一接触孔 ）突出部（16a）。

公开(公告)号：US07466152B2

公开(公告)日：2008-12-16

申请号：US11486053

申请日：2006-07-14

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： G01R31/02

CPC分类号： G01R1/07378 ,  G01R31/2886 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A probe card including probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

摘要翻译： 一种探针卡，包括探针，其中具有多层互连结构的堆叠互连层，并且在与多层互连结构电连接的顶表面上承载探针;以及电容器，其设置在积层互连层上，与电连接 通过多层互连结构的探针中的一个，其中多层互连结构包括在探针附近的内部通孔接触，并且电容器嵌入构成堆积层的树脂绝缘层中。

公开(公告)号：US07439199B2

公开(公告)日：2008-10-21

申请号：US11581383

申请日：2006-10-17

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： H01G7/00

CPC分类号： H01L28/55 ,  H01G4/33 ,  H01L24/73 ,  H01L27/0805 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10S257/924 ,  Y10S438/957 ,  Y10T29/435 ,  H01L2924/00012 ,  H01L2924/00

摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在此形成下电极（14a），电容器电介质层（15a）和上电极（16a）的电容器（Q 1和Q 2） 在下阻挡层（13）上的顺序; 和覆盖至少电容器电介质层（15a）和下阻挡层（13）的上阻挡层（20）。

公开(公告)号：US07417276B2

公开(公告)日：2008-08-26

申请号：US11582480

申请日：2006-10-18

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L27/108

CPC分类号： H01L21/02197 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31691 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

公开(公告)号：US07405366B2

公开(公告)日：2008-07-29

申请号：US11339661

申请日：2006-01-26

申请人： Takeshi Shioga ,  Yoshikatsu Ishizuki ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Yoshikatsu Ishizuki ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： H05K1/16

CPC分类号： H01G4/30 ,  H01G4/232 ,  H01L21/6835 ,  H01L2221/68345 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K1/112 ,  H05K1/141 ,  H05K1/162 ,  H05K3/007 ,  H05K3/4602 ,  H05K2201/0179 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378 ,  H05K2201/10674 ,  H05K2203/016 ,  H05K2203/0191 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49153 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2224/05599

摘要： An interposer 2 including a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further including: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.

摘要翻译： 包括由多个树脂层26,34,42,52,56形成的基座10的插入件2; 埋在基座10中的薄膜电容器12，包括下电极20，电容器电介质膜22和上电极24; 通过基底10形成并与薄膜电容器12的上部电极24电连接的第一贯通电极14b; 以及通过基底10形成并电连接到薄膜电容器12的下部电极20的第二贯通电极14a，还包括：埋入基座10中并电连接到各个上部电极24的互连件48 多个薄膜电容器12，多个第一贯通电极14b经由互连件48与所述多个薄膜电容器12的上部电极24电连接，所述多个第一贯通电极 - 电极14b通过互连48电互连。

公开(公告)号：US07180119B2

公开(公告)日：2007-02-20

申请号：US10849791

申请日：2004-05-21

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L27/108

CPC分类号： H01G4/33 ,  H01G4/008 ,  H01G4/228 ,  H01L21/28568 ,  H01L27/0805 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/11

摘要： The capacitor according to the present invention comprises a lower electrode 18 formed on a base substrate 14, a dielectric film 20 formed on the lower electrode 18, and an upper electrode 28 formed on the dielectric film 20 and including a polycrystalline conduction film 22, and a amorphous conduction film 24 formed on the polycrystalline conduction film 22. Because of the amorphous conduction film 24 included in the upper electrode 28, which can shut off hydrogen and water, hydrogen and water can be prohibited from arriving at the dielectric film 20. Accordingly, the dielectric film 20 of an oxide is prevented from being reduced with hydrogen, and the capacitor can have good electric characteristics.

摘要翻译： 根据本发明的电容器包括形成在基底基板14上的下电极18，形成在下电极18上的电介质膜20和形成在电介质膜20上并包括多晶导体膜22的上电极28，以及 形成在多晶导体膜22上的非晶导体膜24。 由于上部电极28中包含的能够截断氢和水的非晶导体膜24，所以可以禁止氢和水到达电介质膜20。 因此，防止氧化物的电介质膜20被氢还原，并且电容器可以具有良好的电特性。

公开(公告)号：US07102367B2

公开(公告)日：2006-09-05

申请号：US10621445

申请日：2003-07-18

申请人： Yasuo Yamagishi ,  Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Yasuo Yamagishi ,  Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： G01R31/02 ,  H01R13/00 ,  G01R31/26 ,  H01L29/08

CPC分类号： G01R1/07378 ,  G01R31/2886 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A probe card includes probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

摘要翻译： 探针卡包括探针，在其中具有多层互连结构的堆积互连层，并且在与多层互连结构电连接的顶表面上承载探针，以及设置在积层互连层上的电容器，其与 通过多层互连结构的探针中的一个，其中多层互连结构包括在探针附近的内部通孔接触，并且电容器嵌入构成堆积层的树脂绝缘层中。

公开(公告)号：US06894396B2

公开(公告)日：2005-05-17

申请号：US10619483

申请日：2003-07-16

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/31 ,  H01L23/50 ,  H01L23/64 ,  H01L25/00 ,  H01L27/01 ,  H05K1/02 ,  H05K1/18 ,  H01L23/48

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/642 ,  H01L24/48 ,  H01L24/81 ,  H01L27/016 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19106 ,  H01L2924/30107 ,  H05K1/0231 ,  H05K1/182 ,  H05K2201/10515 ,  H05K2201/1053 ,  H05K2201/10734 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device comprises a carrier substrate, an integrated circuit chip mounted on the carrier substrate via bumps, and a capacitor provided to stabilize operation of the integrated circuit chip at high frequencies. In the semiconductor device, the capacitor is electrically connected to pads on bottom of the integrated circuit chip, and the capacitor is provided to have a height on the carrier substrate that is smaller than or equal to a height of the bumps on the carrier substrate.

摘要翻译： 半导体器件包括载体衬底，通过凸块安装在载体衬底上的集成电路芯片，以及用于稳定集成电路芯片在高频下的操作的电容器。 在半导体器件中，电容器电连接到集成电路芯片的底部的焊盘，并且电容器被设置为具有小于或等于载体衬底上的凸块的高度的载体衬底上的高度。