公开(公告)号：US07102367B2

公开(公告)日：2006-09-05

申请号：US10621445

申请日：2003-07-18

申请人： Yasuo Yamagishi ,  Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Yasuo Yamagishi ,  Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： G01R31/02 ,  H01R13/00 ,  G01R31/26 ,  H01L29/08

CPC分类号： G01R1/07378 ,  G01R31/2886 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A probe card includes probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

摘要翻译： 探针卡包括探针，在其中具有多层互连结构的堆积互连层，并且在与多层互连结构电连接的顶表面上承载探针，以及设置在积层互连层上的电容器，其与 通过多层互连结构的探针中的一个，其中多层互连结构包括在探针附近的内部通孔接触，并且电容器嵌入构成堆积层的树脂绝缘层中。

公开(公告)号：US06894396B2

公开(公告)日：2005-05-17

申请号：US10619483

申请日：2003-07-16

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/31 ,  H01L23/50 ,  H01L23/64 ,  H01L25/00 ,  H01L27/01 ,  H05K1/02 ,  H05K1/18 ,  H01L23/48

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/642 ,  H01L24/48 ,  H01L24/81 ,  H01L27/016 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19106 ,  H01L2924/30107 ,  H05K1/0231 ,  H05K1/182 ,  H05K2201/10515 ,  H05K2201/1053 ,  H05K2201/10734 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device comprises a carrier substrate, an integrated circuit chip mounted on the carrier substrate via bumps, and a capacitor provided to stabilize operation of the integrated circuit chip at high frequencies. In the semiconductor device, the capacitor is electrically connected to pads on bottom of the integrated circuit chip, and the capacitor is provided to have a height on the carrier substrate that is smaller than or equal to a height of the bumps on the carrier substrate.

摘要翻译： 半导体器件包括载体衬底，通过凸块安装在载体衬底上的集成电路芯片，以及用于稳定集成电路芯片在高频下的操作的电容器。 在半导体器件中，电容器电连接到集成电路芯片的底部的焊盘，并且电容器被设置为具有小于或等于载体衬底上的凸块的高度的载体衬底上的高度。

公开(公告)号：US20110168564A1

公开(公告)日：2011-07-14

申请号：US13043854

申请日：2011-03-09

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

IPC分类号： C25D7/12

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10 as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 在树脂层10的表面没有形成过度的深孔，如通过去污处理，从而可以在树脂层10上形成光致抗蚀剂膜40的微粉化图案。因此，可以在 确保了高可靠性的窄间距树脂层10。

公开(公告)号：US07832069B2

公开(公告)日：2010-11-16

申请号：US11790732

申请日：2007-04-27

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： H01G7/00

CPC分类号： H01L27/0805 ,  H01L21/76877 ,  H01L24/11 ,  H01L28/40 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed on a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).

摘要翻译： 电容器装置包括由形成在基板（10）上的下电极（12），电介质膜（14）和上电极（16）构成的电容器Q; 覆盖电容器Q的绝缘膜（18）; 形成在所述上电极（16）的连接部（16a）上的绝缘膜（18）中的第一接触孔（18a） 用于防止形成在第一接触孔（18a）中的焊料扩散的电极焊盘（20）; 和与电极焊盘（20）电连接的焊料凸块（22），上部电极（16）具有从电介质膜（14）突出的突出部（16a），与第一接触孔 ）突出部（16a）。

公开(公告)号：US20100112775A1

公开(公告)日：2010-05-06

申请号：US12684570

申请日：2010-01-08

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 树脂层10的表面上也不会形成过度的深孔，如通过干燥处理，可以在树脂层10上形成光致抗蚀剂膜40的微细化图案。因此，可以形成互连44等 能够确保高可靠性的窄间距的树脂层10。

公开(公告)号：US07670940B2

公开(公告)日：2010-03-02

申请号：US11250399

申请日：2005-10-17

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

IPC分类号： H01L21/76

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 树脂层10的表面上也不会形成过度的深孔，如通过干燥处理，可以在树脂层10上形成光致抗蚀剂膜40的微细化图案。因此，可以形成互连44等 能够确保高可靠性的窄间距的树脂层10。

公开(公告)号：US20080315358A1

公开(公告)日：2008-12-25

申请号：US12222764

申请日：2008-08-15

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： H01L29/00 ,  H01G4/06

CPC分类号： H01L28/55 ,  H01G4/33 ,  H01L24/73 ,  H01L27/0805 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10S257/924 ,  Y10S438/957 ,  Y10T29/435 ,  H01L2924/00012 ,  H01L2924/00

摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在下阻挡层（13）上依次形成下电极（14a），电容电介质层（15a）和上电极（16a）制成的电容器（Q1和Q2）; 和覆盖至少所述电容器电介质层（15a）和所述下阻挡层（13）的上阻挡层（20）。

公开(公告)号：US20080305607A1

公开(公告)日：2008-12-11

申请号：US12219577

申请日：2008-07-24

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L21/02197 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31691 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

摘要翻译： 一种薄膜电容器，包括保持在顶部和底部电极之间的顶部电极，底部电极和电介质膜。 电介质膜至少由阳离子Ba，Sr，Ti和阴离子O组成。Sr，Ti和O离子的浓度沿着电介质膜的生长方向是均匀的，而Ba阳离子的浓度是不均匀的 沿着生长方向，使得其中钙钛矿型Ba阳离子（Ba-I）的平均浓度小于非钙钛矿型Ba阳离子（Ba-II）的平均浓度的还原Ba-I区域存在于或接近 比例R =（atm％Ba-I）/ [（atm％Ba-I）+（atm％Ba-II）]在顶部和底部电极中的至少一个之间的边界在0.1

公开(公告)号：US20070232017A1

公开(公告)日：2007-10-04

申请号：US11582480

申请日：2006-10-18

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L21/02197 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31691 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

摘要翻译： 一种薄膜电容器，包括保持在顶部和底部电极之间的顶部电极，底部电极和电介质膜。 电介质膜至少由阳离子Ba，Sr，Ti和阴离子O组成。Sr，Ti和O离子的浓度沿着电介质膜的生长方向是均匀的，而Ba阳离子的浓度是不均匀的 沿着生长方向，使得其中钙钛矿型Ba阳离子（Ba-I）的平均浓度小于非钙钛矿型Ba阳离子（Ba-II）的平均浓度的还原Ba-I区域存在于或接近 比例R =（atm％Ba-I）/ [（atm％Ba-I）+（atm％Ba-II）]在顶部和底部电极中的至少一个之间的边界在0.1

公开(公告)号：US07161200B2

公开(公告)日：2007-01-09

申请号：US11014810

申请日：2004-12-20

申请人： John David Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/016 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/84 ,  H01L27/10852 ,  H01L27/11507 ,  H01L27/13 ,  H05K1/0231

摘要： A capacitive element which includes: a silicon substrate (base material) 1; a base insulating film 2 formed on the silicon substrate 1; and a capacitor Q constituted by forming a bottom electrode 4a, a capacitor dielectric film 5a and a top electrode 6a on the base insulating film 2. The capacitive element is characterized in that the capacitor dielectric film 5a is composed of a material with the formula (Ba1−y,Sry)mYpTiQO3+δ, where 0

摘要翻译： 一种电容元件，包括：硅基板（基材）1; 形成在硅基板1上的基极绝缘膜2; 以及通过在基底绝缘膜2上形成底部电极4a，电容器电介质膜5a和顶部电极6a构成的电容器Q。 电容元件的特征在于，电容器电介质膜5a由具有下式的材料构成：（Ba 1-y，Sr y） 其中0