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    Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
    45.
    发明授权
    Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same 失效
    氮化物半导体层结构和包含其一部分的氮化物半导体激光器

    公开(公告)号：US06829273B2

    公开(公告)日：2004-12-07

    申请号：US10040328

    申请日：2001-12-19

    申请人： Hiroshi Amano ,  Isamu Akasaki ,  Yawara Kaneko ,  Norihide Yamada ,  Tetsuya Takeuchi ,  Satoshi Watanabe

    发明人： Hiroshi Amano ,  Isamu Akasaki ,  Yawara Kaneko ,  Norihide Yamada ,  Tetsuya Takeuchi ,  Satoshi Watanabe

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173

    摘要： The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.

    摘要翻译： 氮化物半导体层结构包括缓冲层和缓冲层上的复合层。 缓冲层是包含AlN的低温沉积氮化物半导体材料的层。 复合层是包含AlN的单晶氮化物半导体材料层。 复合层包括邻近缓冲层的第一子层和第一子层上的第二子层。 复合层的单晶氮化物半导体材料在第一子层中具有第一AlN摩尔分数，并且在第二子层中具有第二AlN摩尔分数。 第二AlN摩尔分数大于第一AlN摩尔分数。 氮化物半导体激光器包括上述氮化物半导体层结构的一部分，并且还包括复合层上的光波导层和光波导层上的有源层。

    Semiconductor substrate and method for making the same
    46.
    发明授权
    Semiconductor substrate and method for making the same 有权
    半导体衬底及其制造方法

    公开(公告)号：US06537513B1

    公开(公告)日：2003-03-25

    申请号：US09562978

    申请日：2000-04-27

    申请人： Hiroshi Amano ,  Tetsuya Takeuchi ,  Isamu Akasaki

    发明人： Hiroshi Amano ,  Tetsuya Takeuchi ,  Isamu Akasaki

    IPC分类号： C01B3326

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/205

    摘要： A substrate for fabricating semiconductor devices based on Group III semiconductors and the method for making the same. A substrate according to the present invention includes a base substrate, a first buffer layer, and a first single crystal layer. The first buffer layer includes a Group III material deposited on the base substrate at a temperature below that at which the Group III material crystallizes. The Group III material is crystallized by heating the buffer layer to a temperature above that at which the Group III material crystallizes to form a single crystal after the Group III material has been deposited. The first single crystal layer includes a Group III-V semiconducting material deposited on the first buffer layer at a temperature above that at which the Group III semiconducting material crystallizes. In one embodiment of the present invention, a second buffer layer and a second single crystal layer are deposited on the first single crystal layer. The second buffer layer includes a Group III material deposited on the first single crystal layer at a temperature below that at which the Group III material crystallizes. The Group III material is then crystallized by heating the buffer layer to a temperature above that at which the Group III material crystallizes to form a single crystal. The second single crystal layer includes a Group III-V semiconducting material deposited on the second buffer layer at a temperature above that at which the Group III semiconducting material crystallizes.

    摘要翻译： 一种用于制造基于III族半导体的半导体器件的衬底及其制造方法。 根据本发明的基板包括基底，第一缓冲层和第一单晶层。 第一缓冲层包括在低于III族材料结晶温度的温度下沉积在基底基材上的III族材料。 第III组材料通过将缓冲层加热至高于第III族材料结晶后形成单晶的温度而结晶，此后III族材料已沉积。 第一单晶层包括在高于III族半导体材料结晶温度的温度下沉积在第一缓冲层上的III-V族半导体材料。 在本发明的一个实施例中，在第一单晶层上沉积第二缓冲层和第二单晶层。 第二缓冲层包括沉积在第一单晶层上的III族材料，其温度低于III族材料结晶的温度。 然后通过将缓冲层加热到高于III族材料结晶以形成单晶的温度，使第III族材料结晶。 第二单晶层包括在高于III族半导体材料结晶的温度的第二缓冲层上沉积的III-V族半导体材料。

    Method for producing a luminous element of III-group nitride
    48.
    发明授权
    Method for producing a luminous element of III-group nitride 失效
    III族氮化物发光元件的制造方法

    公开(公告)号：US5496766A

    公开(公告)日：1996-03-05

    申请号：US411467

    申请日：1995-03-28

    申请人： Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Tanaka ,  Teruo Tohma ,  Katsuhide Manabe

    发明人： Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Tanaka ,  Teruo Tohma ,  Katsuhide Manabe

    IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01L21/20

    CPC分类号： H01L33/325 ,  H01S5/32341

    摘要： Disclosure is a process for producing a luminous element of III-group nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added, comprising the steps of forming a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added; irradiating a low energy electron beam onto a topmost surface of the crystal layer to reform only the crystal layer; forming a thin film for absorbing optical energy on the topmost surface of the crystal layer; and pulse-heating the thin film for absorbing optical energy by heating means to reform only the crystal layer, thereby to produce a bluish green, blue or UV light emitting diode or a semiconductor laser diode with a high precision color purity.

    摘要翻译： 公开是一种用于制造具有晶体层（Al x Ga 1-x）1-y In y N（0≤x≤1,0≤y≤1）的III族氮化物半导体的发光元件的方法， 添加II族元素，其中包括以下步骤：形成II-型元素的晶体层（Al x Ga 1-x）1-y In y N（0≤x≤1,0≤y≤1） 添加组元素; 将低能电子束照射到晶体层的最上表面，仅仅重结晶层; 在所述晶体层的最上表面上形成用于吸收光能的薄膜; 并且通过加热装置对用于吸收光能的薄膜进行脉冲加热，以仅仅重结晶层，从而产生具有高精度色纯度的蓝绿色，蓝色或UV发光二极管或半导体激光二极管。