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公开(公告)号：US09711468B2
公开(公告)日：2017-07-18
申请号：US14683204
申请日：2015-04-10
Inventor： Tsung-Han Tsai , Jung-Chi Jeng , Yueh-Ching Chang , Volume Chien , Huang-Ta Huang , Chi-Cherng Jeng
IPC: H01L23/522 , H01L23/00 , H01L23/48 , H01L23/532
CPC classification number: H01L24/05 , H01L23/481 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/5329 , H01L24/03 , H01L2224/0345 , H01L2224/03452 , H01L2224/03616 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05018 , H01L2224/05019 , H01L2224/0508 , H01L2224/05083 , H01L2224/05085 , H01L2224/05086 , H01L2224/05087 , H01L2224/05088 , H01L2224/05096 , H01L2224/05098 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2924/00012 , H01L2924/00014 , H01L2924/01029 , H01L2924/04941 , H01L2924/04953 , H01L2924/3512 , H01L2924/35121
Abstract: A bonding pad structure comprises a first dielectric layer, a first conductive island in a second dielectric layer over the first dielectric layer and a via array having a plurality of vias in a third dielectric layer over the first conductive island. The structure also comprises a plurality of second conductive islands in a fourth dielectric layer over the via array. The second conductive islands are each separated from one another by a dielectric material of the fourth dielectric layer and in contact with at least one via of the via array. The structure further comprises a substrate over the second conductive islands. The substrate has an opening defined therein that exposes at least one second conductive island. The structure additionally comprises a bonding pad over the substrate. The bonding pad is in contact with the at least one second conductive island through the opening in the substrate.
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公开(公告)号：US09548329B2
公开(公告)日：2017-01-17
申请号：US14322469
申请日：2014-07-02
Inventor： Huan-En Lin , Shiu-Ko Jangjian , Volume Chien , Fu-Tsun Tsai , Yung-Lung Hsu , Chi-Cherng Jeng
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14689
Abstract: A backside illuminated (BSI) image sensor device includes: a first substrate including a front side and a back side; a second substrate bonded with the first substrate on the front side; and a blocking layer between the first substrate and the second substrate. The first substrate includes an image sensor, and the image sensor is configured to collect incident light entering from the back side. The second substrate includes a circuit coupled with the image sensor. The blocking layer is configured to block radiation induced by the circuit.
Abstract translation: 背面照明（BSI）图像传感器装置包括：第一基板，包括前侧和后侧; 在前侧与第一基板结合的第二基板; 以及在第一基板和第二基板之间的阻挡层。 第一基板包括图像传感器，并且图像传感器被配置为收集从背面进入的入射光。 第二基板包括与图像传感器耦合的电路。 阻挡层被配置为阻挡由电路引起的辐射。
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公开(公告)号：US09473719B2
公开(公告)日：2016-10-18
申请号：US14144229
申请日：2013-12-30
Inventor： Volume Chien , Yi-Sheng Liu , Chia-Yu Wei , Yun-Wei Cheng , Chi-Cherng Jeng
IPC: H04N5/374 , H01L31/0232 , H04N5/335
CPC classification number: H04N5/374 , H01L27/14614 , H01L27/1462 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/0232 , H04N5/335
Abstract: A semiconductor image sensor device having a conformal protective layer includes a semiconductor substrate a pixel-array region and a peripheral region. The conformal protective layer is disposed over a plurality of pixels having a photodiode and a plurality of transistors in the pixel-array region. Contacts to the plurality of transistors are surrounded by the conformal protective layer. In some embodiments, the conformal protective layer is the same material as transistor gate spacers in the peripheral region.
Abstract translation: 具有共形保护层的半导体图像传感器装置包括半导体衬底，像素阵列区域和外围区域。 保形层设置在像素阵列区域中具有光电二极管和多个晶体管的多个像素上。 与多个晶体管的接触被保形层包围。 在一些实施例中，共形保护层与外围区域中的晶体管栅极间隔物相同。
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公开(公告)号：US09252180B2
公开(公告)日：2016-02-02
申请号：US13763355
申请日：2013-02-08
Inventor： Volume Chien , I-Chih Chen , Ying-Lang Wang , Hsin-Chi Chen , Ying-Hao Chen , Hung-Ta Huang
IPC: H01L21/00 , H01L27/146 , H01L23/00 , H04N5/335
CPC classification number: H01L27/14636 , H01L21/764 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/14 , H01L27/1464 , H01L27/14643 , H01L27/14683 , H01L2224/0401 , H01L2224/05075 , H01L2224/05624 , H01L2224/05647 , H01L2224/08054 , H01L2224/13014 , H01L2224/13016 , H01L2224/48463 , H01L2924/01013 , H01L2924/12042 , H01L2924/12043 , H01L2924/15788 , H04N5/335 , H01L2924/00
Abstract: A bonding pad structure for an image sensor device and a method of fabrication thereof. The image sensor device has a radiation-sensor region including a substrate and a radiation detection device, and a bonding pad region including the bonding pad structure. The bonding pad structure includes: an interconnect layer; an interlayer dielectric layer (IDL), both layers extending from under the substrate into the bonding pad region; an isolation layer formed on IDL; a conductive pad having a planar portion and one or more bridging portions extending perpendicularly from the planar portion, through the IDL and isolation layers, and to the interconnect layer; and a plurality of non-conducting stress-releasing structures disposed between the isolation layer and the conductive pad in such a way to adjoin its planar and the bridging portions together for releasing potential pulling stress applied thereon and preventing a conductive pad peeling.
Abstract translation: 一种用于图像传感器装置的焊盘结构及其制造方法。 图像传感器装置具有包括基板和放射线检测装置的辐射传感器区域和包括接合焊盘结构的焊盘区域。 接合焊盘结构包括：互连层; 层间电介质层（IDL），从衬底下延伸到焊盘区域的两层; 在IDL上形成隔离层; 具有平面部分和从平面部分垂直延伸穿过IDL和隔离层以及互连层的一个或多个桥接部分的导电焊盘; 以及设置在隔离层和导电焊盘之间的多个非导电应力释放结构，以将其平面和桥接部分邻接在一起，以释放施加在其上的潜在的拉应力并防止导电垫剥离。
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45.发明申请FORMATION OF BURIED COLOR FILTERS IN A BACK SIDE ILLUMINATED IMAGE SENSOR WITH AN ONO-LIKE STRUCTURE 有权在具有类似结构的背面照明图像传感器中形成彩色滤色片公开(公告)号：US20150372030A1
公开(公告)日：2015-12-24
申请号：US14308760
申请日：2014-06-19
Inventor： Yun-Wei Cheng , Chen Chiu-Jung , Volume Chien , Kuo-Cheng Lee , Yung-Lung Hsu , Chen Hsin-Chi
IPC: H01L27/146
CPC classification number: H01L27/14685 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.
Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 多个遮光结构设置在基板的第二侧上。 钝化层涂覆在每个遮光结构的顶表面和侧壁上。 多个间隔物设置在涂覆在遮光结构的侧壁上的钝化层的部分上。
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Patent Agency Ranking
46.发明授权公开(公告)号：US09142588B2
公开(公告)日：2015-09-22
申请号：US14525491
申请日：2014-10-28
Inventor： I-I Cheng , Chih-Mu Huang , Pin Chia Su , Chi-Cherng Jeng , Volume Chien , Chih-Kang Chao
IPC: H01L21/32 , H01L27/146 , H01L27/14 , H01L21/82
CPC classification number: H01L27/14645 , H01L21/82 , H01L23/585 , H01L27/14 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/1469 , H01L2924/0002 , H01L2924/00
Abstract: A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second plurality of edges misaligned with respective ones of the first plurality of edges. The semiconductor substrate further includes a second portion extending from one of the second plurality of edges to one of the first plurality of edges of the die. The second portion includes a first end connected to the one of the second plurality of edges, and a second end having an edge aligned to the one of the first plurality of edges of the die.
Abstract translation: 模具包括第一多个边缘以及模具中的半导体衬底。 半导体衬底包括第一部分，其包括与第一多个边缘中的相应边缘不对准的第二多个边缘。 半导体衬底还包括从第二多个边缘之一延伸到管芯的第一多个边缘之一的第二部分。 第二部分包括连接到第二多个边缘中的一个边缘的第一端和具有与模具的第一多个边缘中的一个边缘对准的边缘的第二端。
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公开(公告)号：US09060144B2
公开(公告)日：2015-06-16
申请号：US13968764
申请日：2013-08-16
Inventor： Yi-Sheng Liu , Yun-Wei Cheng , Volume Chien , Chi-Cherng Jeng , Hsin-Chi Chen
IPC: H04N3/14 , H04N5/335 , H04N5/374 , H01L31/18 , H01L27/146
CPC classification number: H04N5/374 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14685
Abstract: An image sensor comprises an image sensing substrate that in turns includes an image sensing device, a first sensor pixel, a second sensor pixel, and a divider. The divider is between the first sensor pixel and the second sensor pixel.
Abstract translation: 图像传感器包括图像感测基板，该图像感测基板依次包括图像感测装置，第一传感器像素，第二传感器像素和分割器。 分频器位于第一传感器像素和第二传感器像素之间。
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公开(公告)号：US20150048518A1
公开(公告)日：2015-02-19
申请号：US14059102
申请日：2013-10-21
Inventor： I-Chih Chen , Ying-Hao Chen , Chi-Cheng Jeng , Volume Chien , Fu-Tsun Tsai , Kun-Huei Lin
CPC classification number: H01L23/5226 , G06F17/5077 , H01L21/76805 , H01L21/76877 , H01L21/76897 , H01L23/3171 , H01L23/481 , H01L23/522 , H01L23/528 , H01L23/5283 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/94 , H01L25/50 , H01L2224/03616 , H01L2224/0401 , H01L2224/04026 , H01L2224/05022 , H01L2224/05085 , H01L2224/05092 , H01L2224/05124 , H01L2224/05147 , H01L2224/05184 , H01L2224/05567 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/16145 , H01L2224/29006 , H01L2224/29186 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/94 , H01L2924/0002 , H01L2924/3511 , H01L2924/00 , H01L2224/83 , H01L2924/00014 , H01L2224/81 , H01L2924/00012
Abstract: A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.
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49.发明申请公开(公告)号：US20150044810A1
公开(公告)日：2015-02-12
申请号：US14525491
申请日：2014-10-28
Inventor： I-I Cheng , Chih-Mu Huang , Pin Chia Su , Chi-Cherng Jeng , Volume Chien , Chih-Kang Chao
IPC: H01L27/146
CPC classification number: H01L27/14645 , H01L21/82 , H01L23/585 , H01L27/14 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/1469 , H01L2924/0002 , H01L2924/00
Abstract: A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second plurality of edges misaligned with respective ones of the first plurality of edges. The semiconductor substrate further includes a second portion extending from one of the second plurality of edges to one of the first plurality of edges of the die. The second portion includes a first end connected to the one of the second plurality of edges, and a second end having an edge aligned to the one of the first plurality of edges of the die.
Abstract translation: 模具包括第一多个边缘以及模具中的半导体衬底。 半导体衬底包括第一部分，其包括与第一多个边缘中的相应边缘不对准的第二多个边缘。 半导体衬底还包括从第二多个边缘之一延伸到管芯的第一多个边缘之一的第二部分。 第二部分包括连接到第二多个边缘中的一个边缘的第一端和具有与模具的第一多个边缘中的一个边缘对准的边缘的第二端。
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50.发明申请公开(公告)号：US20140367820A1
公开(公告)日：2014-12-18
申请号：US14469496
申请日：2014-08-26
Inventor： Che-Min Lin , Volume Chien , Chih-Kang Chao , Chi-Cherng Jeng , Pin Chia Su , Chih-Mu Huang
IPC: H01L31/0232 , H01L31/18 , H01L31/10
CPC classification number: H01L31/02327 , H01L27/14629 , H01L31/0232 , H01L31/10 , H01L31/115 , H01L31/18
Abstract: A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.
Abstract translation: 光电二极管结构包括设置在光电二极管下方的光电二极管和凹面反射器。 凹面反射器被布置成将来自上方的入射光反射到光电二极管。
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