Abstract:
Disclosed embodiments relate to a semiconductor device. A semiconductor device is fabricated by attachment of a first chip to a first surface of a pad of a leadframe. Each of one or more terminals of the first chip is connected to a respective lead of the leadframe. The first chip and the first surface of the pad are then encapsulated in a packaging material, while leaving an opposite second surface of the pad exposed. A second chip is attached to a recessed portion of the second surface of the pad so that at least one terminal of the second chip is substantially coplanar with an un-recessed portion of the second surface. In one embodiment, a third chip is also attached to the recessed portion of the second surface so that at least one terminal of the third chip is substantially coplanar with the un-recessed portion of the second surface.
Abstract:
A power supply system has a leadframe with leads and a pad. The pad surface facing a circuit board has a portion recessed with a depth and an outline suitable for attaching side-by-side the sync and the control FET semiconductor chips. The input terminal of the control FET and the grounded output terminal of the sync FET are coplanar with the un-recessed portion of the pad (switch node terminal) so that all terminals can be directly attached to contacts of a circuit board. A driver-and-control chip is vertically stacked to the opposite pad surface and encapsulated in a packaging compound.
Abstract:
A system has a leadframe with leads and a pad. The pad surface having a portion recessed with a depth and an outline suitable for attaching a semiconductor chip. A first chip is vertically stacked to the opposite pad surface. A clip is vertically stacked on the first chip and tied to a lead. A second chip has a terminal attached to the recessed portion and terminals co-planar with the un-recessed portion. A second chip is attached to the clip.
Abstract:
A method for fabricating an electronic multi-output device. A substrate having a pad and pins is provided. A first chip is provided having a first and a second transistor integrated so that the first terminals of the transistors are merged into a common terminal on one chip surface and the patterned second and third terminals are on the opposite chip surface. The common first terminal is attached to the substrate pad. A driver and control chip is attached to the substrate pad adjacent to the first chip. The second terminals of the first and second transistors are connected by discrete first and second gang clips to respective substrate pins. A second chip is provided having a third and a fourth transistor integrated so that the second terminals of the transistors are merged into a common terminal on one chip surface. Patterned first and third terminals are on the opposite chip surface. The second chip is flipped to attach the first terminals vertically to the first and second gang clips. The third terminals are concurrently attached by discrete gang clips to respective pins. A common clip is attached to the common second terminal and connecting the common clip to a pin.
Abstract:
A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.
Abstract:
An electronic multi-output device has a substrate including a first pad, a second pad and a plurality of pins. A first chip with a first transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The first chip with its first terminal is tied to the first pad. A second chip with a second transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The second chip with its first terminal is tied to the second pad. The second terminals are connected by a discrete first metal clip and a second metal clip to respective substrate pins. A composite third chip has a third and a fourth transistor integrated so that the first terminals of the transistors are on one chip surface. The second terminals are merged into a common terminal. The patterned third terminals are on the opposite chip surface. The first terminals are vertically attached to the first and second metal clips, respectively. The common terminal is connected by a common clip to a substrate pin.
Abstract:
A packaged multi-output converter (200) comprising a leadframe with a chip pad (201) as ground terminal and a plurality of leads (202) including the electrical input terminal (203); a first FET chip (sync chip, 220) with its source terminal affixed to the leadframe and on its opposite surface a first drain terminal (221) positioned adjacent to a second drain terminal (222), the drain terminals connected respectively by a first (241) and a second (242) metal clip to a first (204) and second (205) output lead; a second FET chip (control chip, 211), positioned vertically over the first drain terminal, with its source terminal attached onto the first clip; a third FET chip (control chip, 212), positioned vertically over the second drain terminal, with its source terminal attached onto the second clip; and the drain terminals (213, 214) of the second and third chips attached onto a third metal clip (260) connected to the input lead (203).
Abstract:
A power supply system (200) has a QFN leadframe with leads and a pad (201, switch node terminal); a pad surface having a portion recessed with a depth (270) and an outline suitable for attaching a semiconductor chip. A first FET chip (220) is vertically stacked to the opposite pad surface. A clip (240) is vertically stacked on the first FET chip and tied to a lead (202, grounded output terminal). A second FET chip (210) has its source terminal attached to the recessed portion and its drain (210a, input terminal) and gate (210b) terminals co-planar with the un-recessed portion. A driver-and-controller chip (230) is attached to the clip. Packaging compound (290) encapsulates the parts but leaves a pad surface and the drain and gate terminals of the second FET chip un-encapsulated.
Abstract:
A packaged multi-output converter (200) comprising a leadframe with a chip pad (201) as ground terminal and a plurality of leads (202) including the electrical input terminal (203); a first FET chip (sync chip, 220) with its source terminal affixed to the leadframe and on its opposite surface a first drain terminal (221) positioned adjacent to a second drain terminal (222), the drain terminals connected respectively by a first (241) and a second (242) metal clip to a first (204) and second (205) output lead; a second FET chip (control chip, 211), positioned vertically over the first drain terminal, with its source terminal attached onto the first clip; a third FET chip (control chip, 212), positioned vertically over the second drain terminal, with its source terminal attached onto the second clip; and the drain terminals (213, 214) of the second and third chips attached onto a third metal clip (260) connected to the input lead (203).
Abstract:
A method of making a semiconductor device includes separating a conductive structure of a leadframe into interior conductive leads using an etching process. The method includes forming a first molded structure by applying a first molding compound to a leadframe having a conductive structure, separating the conductive structure into at least two interior contact portions, attaching a semiconductor die to at least one of the interior contact portions, the at least two interior contact portions being supported by the first molding compound, and forming a second molded structure by applying a second molding compound to at least part of the semiconductor die and at least two interior contact portions.