Transistor having an organic semiconductor with a hollow space
    50.
    发明授权
    Transistor having an organic semiconductor with a hollow space 有权
    具有中空空间的有机半导体的晶体管

    公开(公告)号:US08193526B2

    公开(公告)日:2012-06-05

    申请号:US12672135

    申请日:2008-08-06

    IPC分类号: H01L51/00

    摘要: A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided.A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, a source electrode disposed along the inner wall of the through hole, a drain electrode disposed along the inner wall of the through hole, a gate electrode disposed on the other surface of the resin film opposing the through hole, an insulating layer disposed on the gate electrode at the bottom of the through hole and an organic semiconductor disposed in the through hole so as to contact the source electrode and the drain electrode, wherein the organic semiconductor makes contact with at least a part of the insulating layer at the bottom of the through hole so that a channel is formed in the organic semiconductor in the vicinity of the insulating layer that is in contact therewith.

    摘要翻译: 提供了具有以更高密度形成的半导体元件的半导体器件。 此外,还提供了使用该半导体器件的图像显示装置。 一种半导体器件,包括具有从一个表面到另一个表面穿透的通孔的树脂膜,沿着通孔的内壁设置的源电极,沿该通孔的内壁设置的漏电极, 设置在与通孔相对的树脂膜的另一个表面上的栅电极,设置在通孔底部的栅电极上的绝缘层和布置在通孔中的有机半导体,以便与源电极和漏极 电极,其中有机半导体与通孔底部的绝缘层的至少一部分接触,使得在与其接触的绝缘层附近的有机半导体中形成沟道。