Abstract:
A field emission electron gun has a field emission cathode composed of a carbon fiber and a conductive base for supporting the carbon fiber, an extractor for causing the field emission of electrons, and an accelerator for accelerating the electrons. The carbon fiber contains at least one of trivalent and pentavalent elements. In particular, the trivalent and pentavalent elements are boron and/or nitrogen. The content of at least one of boron and nitrogen in the carbon fiber is 0.1% to 5% at an atomic weight ratio of the contained element to carbon. The diameter of the carbon fiber is 20 nm to 200 nm. Such an electron gun can have a high-brightness electron beam with a narrow energy width. The field emission electron gun is applied to various electron beam apparatus.
Abstract:
A control circuit for controlling an electron-emitting device is formed to draw, with a voltage applied, an excitation current being related to a number of electrons emitted. The inventive control circuit includes a first determinator for determining whether an amount of charge transported by the excitation current has reached a predetermined charge threshold value, a second determinator for determining whether a magnitude of the excitation current has reached a predetermined current threshold value, and a switch for switching off the excitation current as soon as the first determinator determines that the amount of charge has reached a predetermined charge threshold value, or as soon as the second determinator determines that the magnitude of the excitation current is smaller than the predetermined current threshold value. The control circuit allows the usage of, for example, CNT arrays for irradiation and operates on the basis of the current drawn by the electron-emitting device, which makes possible a simple setup.
Abstract:
A multi-column charged particle optics assembly comprises: a first optical component which is continuous through all columns of the charged particle optics assembly; and a multiplicity of independently alignable second optical components coupled to the first optical component, such that there is one second component for each column in the charged particles optics assembly. The first component provides mechanical integrity to the charged particle optics assembly and each second optical component is independently alignable to the optic axis of its corresponding column. In a further embodiment, the charged particle optics assembly comprises: first and second continuous optical components; and a multiplicity of independently alignable electrodes coupled to the second optical component, such that there is a corresponding independently alignable electrode for each column.
Abstract:
An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams has a multi-axis that includes: a plurality of magnetic conductive member arranged to be substantially parallel to each other, the magnetic conductive members having a plurality of openings; and a non-magnetic conductive member provided between the magnetic conductive members, the non-magnetic conductive member having a plurality of through holes. The openings of the magnetic conductive members and the through holes of the non-magnetic conductive members form together a plurality of lens openings operable to converge the electron beams independently of each other by allowing the electron beams to pass therethrough, respectively.
Abstract:
Apparatus and methods are disclosed for inspecting masks, reticles, and other patterned samples used in microlithography. The apparatus and methods are useful for detecting, at high speed and high accuracy, any defects in the pattern defined by the sample. Multiple charged-particle beams (e.g., electron beams) scannably irradiated simultaneously on respective loci in an irradiation region of a surface of the sample. A charged-particle detector is situated so as to detect charged particles propagating, during the irradiation, from the loci. The charged-particle detector produces data on whether or not the pattern in the irradiated region has any defects compared to a reference pattern. The detectors can be situated so as to receive charged particles reflected from the irradiated region, charged particles passing through the irradiated region, or secondary electrons produced from irradiating the loci. An electrode plate, preferably defining multiple apertures each dedicated to receiving charged particles originating at a respective locus, is used to attract the charged particles toward the detectors.
Abstract:
An electron source including a non-orthogonal row-column matrix of two dimensional arrays of electron emitters positioned in groups of arrays, common control electrodes mounted adjacent associated groups, and electrical connections to the arrays in each group connecting the emitters in each array in parallel and connecting each array in each group to a similar array in each other group so as to form rows of groups equal in number to the number of arrays in each group. The groups are positioned along a first axial direction and arranged with the arrays in each group spaced apart in a second direction, at an angle to the first direction, so that the arrays are evenly spaced in the first direction. In one embodiment dummy control electrodes are used at each end of the structure and in another embodiment a field compensating electrode is provided on opposite sides of each control electrode and a surrounding electrode extends between adjacent field compensating electrodes.
Abstract:
Fabrication of crystalline or molecular nanostructures with dimensions less than or equal to 1000.ANG. on a substrate surface is achieved by the indirect and/or direct action of a highly-localized field-emission current, which causes atoms of molecular gases introduced into a vacuum chamber to deposit or etch at surface atomic sites that are fixed by the emission-tip location. The tip is shaped to maintain control of the emitting region and is typically about 10.ANG. above the structure. The tip position is stepped in a programmed sequence, with each step taken on detecting the current increase induced by an atomic deposition below the tip. Gas sequences or mixtures can also be programmed, and microstructures of typically 10.sup.2 -10.sup.8 atoms are thereby formed with exact control of the positions and types of atomic constituents.The multi-tipped tool consists of a large array of field-emitting nanostructure probe tip extensions on the end of a metal probe. The nanostructures are spaced in a prescribed, repeating pattern with typical spacings on the order of 400.ANG.. The probe voltage, current and position, as well as CVD or etching gas pressures, are sequentially adjusted to fabricate nanostructures on a nearby substrate, which is typically 10-30.ANG. below the termination points of the probe tip extensions.
Abstract:
Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.
Abstract:
Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.
Abstract:
A multi-beam scanning electron beam device (100) is described. The multi-bea scanning electron beam device having a column, includes a multi-beam emitter (110) for emitting a plurality of electron beams (12,13,14), at least one common electron beam optical element (130) having a common opening for at least two of the plurality of electron beams and being adapted for commonly influencing at least two of the plurality of electron beams, at least one individual electron beam optical element (140) for individually influencing the plurality of electron beams, a common objective lens assembly (150) for focusing the plurality of electrons beams having a common excitation for focusing at least two of the plurality of electron beams, and adapted for focusing the plurality of electron beams onto a specimen (20) for generation of a plurality of signal beams (121, 131,141), and a detection assembly (170) for individually detecting each signal beam on a corresponding detection element.