公开(公告)号：US09275835B2

公开(公告)日：2016-03-01

申请号：US14089175

申请日：2013-11-25

Applicant: Gregory DeLarge

Inventor： Gregory DeLarge

IPC: H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32752 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32513 ,  H01J2237/33

Abstract: One possible embodiment of the invention could be a plasma reactor chamber and method of operating same wherein the plasma reactor chamber comprises a set of chamber walls and a door that when closed seals the plasma reactor chamber air-tight; one or more RF electrodes with at least one RF electrode being a power RF electrode; and a structure that moves one or more specimens proximate to the one or more RF electrodes.

Abstract translation: 本发明的一个可能的实施方案可以是等离子体反应器室及其操作方法，其中等离子体反应器室包括一组室壁和当封闭密封等离子体反应器室时的门; 一个或多个RF电极，其中至少一个RF电极是功率RF电极; 以及将一个或多个样本移动到靠近所述一个或多个RF电极的结构。

公开(公告)号：US20150111391A1

公开(公告)日：2015-04-23

申请号：US14404449

申请日：2013-05-28

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： Chul Joo Hwang ,  Jeung Hoon Han ,  Young Hoon Kim ,  Seung Hoon Seo

IPC: C23C16/50 ,  C23C16/458 ,  H01L21/3205 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/50 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/509 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32752 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/67155

Abstract: Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.

Abstract translation: 公开了一种处理衬底的装置和方法，其有助于改善沉积在衬底上的薄膜的沉积均匀性，并且控制薄膜的质量，其中该装置包括处理室; 用于支撑至少一个基板的基板支撑件，其中所述基板支撑件设置在所述处理室的底部; 面对基板支撑件的室盖，用于覆盖处理室的上侧的室盖; 以及用于在基板上局部分配活性源气体的气体分配器，其中局部面对基板支撑件的气体分配器设置在室盖中，其中气体分配器通过使用等离子体形成气体形成等离子体，并且通过 将源气体分配到一些等离子体区域以形成等离子体。

公开(公告)号：US20150027875A1

公开(公告)日：2015-01-29

申请号：US14153660

申请日：2014-01-13

Applicant: Samsung Display Co., Ltd.

Inventor： Ou-Hyen Kim

IPC: C23C14/35

CPC classification number: C23C14/3407 ,  C23C14/3464 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32752 ,  H01J37/3417 ,  H01J37/345 ,  H01L51/5253

Abstract: A deposition apparatus may include a first substrate mounting member and a second substrate mounting member that may overlap the first substrate mounting member. The deposition apparatus may further include a sputter unit disposed in a space located between the first substrate mounting member and the second substrate mounting member. The sputter unit may have a first opening and a second opening. The first opening may be disposed closer to the first substrate mounting member than the second opening. The second opening may be disposed closer to the second substrate mounting member than the first opening. A first set of material and a second set of material may be simultaneously provided through the first opening and the second opening, respectively.

Abstract translation: 沉积设备可以包括可以与第一基板安装构件重叠的第一基板安装构件和第二基板安装构件。 沉积装置还可以包括设置在位于第一基板安装构件和第二基板安装构件之间的空间中的溅射单元。 溅射单元可以具有第一开口和第二开口。 第一开口可以比第二开口更靠近第一基板安装构件设置。 第二开口可以比第一开口更靠近第二基板安装构件设置。 可以分别通过第一开口和第二开口同时提供第一组材料和第二组材料。

公开(公告)号：US20140363587A1

公开(公告)日：2014-12-11

申请号：US14366231

申请日：2012-12-21

Applicant: Song Whe Huh ,  Jeung Hoon Han

Inventor： Song Whe Huh ,  Jeung Hoon Han

IPC: B05D3/04 ,  H01L21/02

CPC classification number: H01L21/68764 ,  B05D3/044 ,  C23C16/509 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02 ,  H01L21/02057 ,  H01L21/68771

Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.

Abstract translation: 公开了一种有利于提高薄膜材料的均匀性的基板处理装置和方法，并且还通过使用彼此分开设置的等离子体形成空间和源气体分配空间来有助于控制薄膜的质量，其中基板处理装置包括 处理室; 用于支撑多个基板的基板支撑件，可旋转地设置在处理室内的基板支撑件; 以及电极单元，其布置在所述基板支撑件上方，并设置有所述等离子体形成空间和所述源气体分配空间，其中所述等离子体形成空间与所述源气体分配空间在空间上分离。

公开(公告)号：US20130220795A1

公开(公告)日：2013-08-29

申请号：US13626295

申请日：2012-09-25

Applicant: Cardinal CG Company

Inventor： Dennis M. Brabender ,  Jeffrey L. Kokoschke

IPC: C23C14/35

CPC classification number: C23C14/352 ,  C23C14/3414 ,  C23C14/3464 ,  C23C14/56 ,  H01J37/32458 ,  H01J37/32752 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3447

Abstract: A sputtering chamber includes at least two sputtering targets, one of the at least two targets disposed on a first side a substrate conveyor extending within the chamber, and another of the at least two targets disposed on a second side of the conveyor. The at least two targets may be independently operable, and at least one of the targets, if inactivated, may be protected by a shielding apparatus. Both of the at least two targets may be mounted to a first wall of a plurality of walls enclosing the sputtering chamber.

Abstract translation: 溅射室包括至少两个溅射靶，所述至少两个靶中的一个设置在第一侧上，所述基底传送器在腔室内延伸，并且所述至少两个靶中的另一个设置在输送器的第二侧上。 所述至少两个靶可以是可独立操作的，并且如果失活，则所述靶中的至少一个可被屏蔽装置保护。 所述至少两个靶中的至少两个可以被安装到围绕所述溅射室的多个壁的第一壁。

公开(公告)号：US20120064260A1

公开(公告)日：2012-03-15

申请号：US13319468

申请日：2009-05-15

Applicant: Masayasu Suzuki

Inventor： Masayasu Suzuki

IPC: C23C16/511 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/511 ,  C23C16/345 ,  C23C16/4583 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32752

Abstract: A surface wave plasma CVD apparatus includes a waveguide connected to a microwave source with slot antennae; a dielectric member that introduces microwaves from slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a subject of film formation such that the subject passes a film formation processing region facing the dielectric member; a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject; and gas ejection parts provided in parallel in a direction at right angles to a direction along which the subject is moved at predetermined positions between the subject that passes through the film formation processing region and the dielectric member. Each of the gas ejection parts has a slit extending parallel to the dielectric member.

Abstract translation: 表面波等离子体CVD装置包括连接到具有缝隙天线的微波源的波导管; 电介质构件，其将微波从缝隙天线引入等离子体处理室以产生表面波等离子体; 移动装置，其往往移动成像对象，使得被摄体通过面向电介质构件的成膜处理区域; 控制装置，其根据成膜条件控制移动装置的成膜对象的往复运动，以对被检体进行成膜; 以及气体喷射部件，其沿与被摄体在通过成膜处理区域的被摄体和电介质部件之间的预定位置处移动的方向成直角的方向平行设置。 每个气体喷射部分具有平行于电介质部件延伸的狭缝。

公开(公告)号：US20110305836A1

公开(公告)日：2011-12-15

申请号：US13203400

申请日：2010-03-03

Applicant: Kazutoshi Murata ,  Yasunari Mori

Inventor： Kazutoshi Murata ,  Yasunari Mori

IPC: C23C16/458

CPC classification number: C23C16/45544 ,  C23C14/56 ,  C23C14/562 ,  C23C14/568 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/50 ,  C23C16/54 ,  H01J37/32752

Abstract: An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.

Abstract translation: 在基板上形成薄膜的原子层沉积装置包括：第一容器，其限定第一内部空间，并且包括基板搬入口和排出口;以及气体导入口，位于不同的位置，所述基板被承载 通过所述基板输入和输出端口进出的气体，所述气体通过所述气体引入口引入以在所述基板上形成所述薄膜;第二容器，设置在所述第一容器中，以限定与所述第二内部空间分离的第二内部空间; 所述第一内部空间，所述第二容器包括第一开口，沿预定方向移动所述第二容器的第一移动机构;以及控制器，其控制所述第一移动机构，使得所述第二容器移动到所述第一位置， 当输入和输出基板时，输入和输出端口和第一开口彼此相对定位，控制器控制 e第一移动机构，使得当在基板上形成薄膜时，第二容器移动到第二位置，在第二位置，气体导入口和第一开口彼此相对定位。

公开(公告)号：US20100089318A1

公开(公告)日：2010-04-15

申请号：US12575844

申请日：2009-10-08

Applicant: Stanford R. Ovshinsky

Inventor： Stanford R. Ovshinsky

IPC: C23C16/00

CPC classification number: C23C16/452 ,  C23C16/54 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32752 ,  H01J37/32761 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/18

Abstract: A continuous thin film deposition apparatus that includes a remote plasma source. The source forms a plasma from a precursor and delivers a modified form of the plasma as a charge-depleted deposition medium to a deposition apparatus for formation of a thin film material. The thin film may be formed on a continuous web or other moving substrate. The charge-depleted deposition medium may be formed within the remote plasma source and delivered to an operatively coupled deposition apparatus or the charge-depleted deposition medium may form as the plasma exits the remote plasma source. The initial plasma is formed within the remote plasma source and includes a distribution of charged species (electrons and ions). The charge-depleted deposition medium contains a reduced concentration of the charged species and permits deposition of thin film materials having lower defect concentration. In one embodiment, the thin film material is a solar material and the lower defect concentration provides a higher solar conversion efficiency.

Abstract translation: 一种包括远程等离子体源的连续薄膜沉积设备。 源形成来自前体的等离子体，并将等离子体的修饰形式作为电荷耗尽的沉积介质递送到用于形成薄膜材料的沉积设备。 薄膜可以形成在连续的幅材或其它移动的基底上。 电荷耗尽的沉积介质可以形成在远程等离子体源内并且被输送到可操作耦合的沉积设备，或者当等离子体离开远程等离子体源时可形成耗尽电荷的沉积介质。 初始等离子体形成在远程等离子体源内，并且包括带电物质（电子和离子）的分布。 电荷耗尽的沉积介质含有降低的带电量的浓度，并允许沉积具有较低缺陷浓度的薄膜材料。 在一个实施例中，薄膜材料是太阳能材料，较低的缺陷浓度提供更高的太阳能转换效率。

公开(公告)号：US20080070389A1

公开(公告)日：2008-03-20

申请号：US11946125

申请日：2007-11-28

Applicant: Shunpei Yamazaki ,  Toshiji Hamatani ,  Koichiro Tanaka

Inventor： Shunpei Yamazaki ,  Toshiji Hamatani ,  Koichiro Tanaka

IPC: H01L21/265

CPC classification number: H01J37/05 ,  H01J37/08 ,  H01J37/147 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32752 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586

Abstract: There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

Abstract translation: 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。

公开(公告)号：US20080061041A1

公开(公告)日：2008-03-13

申请号：US11853703

申请日：2007-09-11

Applicant: Tatsumi NISHIJIMA

Inventor： Tatsumi NISHIJIMA

IPC: H05H1/34

CPC classification number: H01J37/32623 ,  H01J37/32091 ,  H01J37/32752

Abstract: A plasma treatment apparatus that can perform an excellent plasma treatment on a portion of a work which is to be used for producing products or parts, while preventing undesirable occurrence of discharge at that portion reliably is provided. The plasma treatment apparatus performs a plasma treatment on a plate-shaped work having an usable region to be used for producing products or parts and an unusable region other than the usable region. The plasma treatment apparatus includes a first electrode, a second electrode provided so as to face the first electrode via the work so that a space is formed between the second electrode and the work, a gas supply unit which supplies a gas into the space, a power circuit having a power source which applies a high frequency voltage across the first and second electrodes so that the gas supplied into the space is converted into a plasma, and a support unit which supports at least a part of the second region of the work so that the work is spaced apart from the first electrode in a distance at which discharge does not occur between the first region and the first electrode when the high frequency voltage is applied across the first and second electrodes. A plasma treatment method performed using such a plasma treatment apparatus is also provided.

Abstract translation: 本发明提供一种等离子体处理装置，其能够对于用于制造产品或部件的工件的一部分进行优异的等离子体处理，同时防止不可靠地在该部分发生放电。 等离子体处理装置对具有用于制造产品或部件的可用区域以及可用区域以外的不可用区域的板状工件进行等离子体处理。 等离子体处理装置包括第一电极，第二电极，其经由工件面对第一电极，使得在第二电极和工件之间形成空间;气体供应单元，其将气体供应到空间中; 电源电路，其具有在第一和第二电极两端施加高频电压，使得供应到空间中的气体被转换为等离子体;以及支撑单元，其支撑工件的第二区域的至少一部分 当跨越第一和第二电极施加高频电压时，工件与第一电极隔开一定距离，在第一区域和第一电极之间不发生放电。 还提供了使用这种等离子体处理装置进行的等离子体处理方法。