公开(公告)号：US20160032455A1

公开(公告)日：2016-02-04

申请号：US14815625

申请日：2015-07-31

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Thompson ,  Mei Chang ,  Paul F. Ma ,  David Knapp ,  Jeffrey W. Anthis ,  Annamalai Lakshmanan

IPC: C23C16/455 ,  C25D3/38 ,  C25D5/34 ,  C23C16/18 ,  C23C16/02

CPC classification number: C23C16/45553 ,  C23C16/045 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76873

Abstract: Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.

Abstract translation: 利用有机金属化合物沉积金属层的方法。 衬底表面暴露于气态有机金属金属前体和有机金属金属反应物以在衬底上形成金属层（例如铜层）。

公开(公告)号：US09202745B2

公开(公告)日：2015-12-01

申请号：US14466821

申请日：2014-08-22

Applicant: Applied Materials, Inc.

Inventor： David T. Or ,  Joshua Collins ,  Mei Chang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/76814 ,  H01L21/02041 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138

Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts.

Abstract translation: 本文描述了用于处理衬底的方法。 方法可以包括将包含硅的衬底定位在处理室中，将等离子体传送到衬底的表面，同时偏置衬底，将衬底的表面暴露于氟化铵（NH 4 F），并将衬底退火到第一温度以升华 一种或多种挥发性副产物。

公开(公告)号：US09190320B2

公开(公告)日：2015-11-17

申请号：US13748910

申请日：2013-01-24

Applicant: Applied Materials, Inc.

Inventor： Khaled Z. Ahmed ,  Prabu Gopalraja ,  Atif Noori ,  Mei Chang

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/67 ,  H01L23/482 ,  H01L29/772 ,  H01L21/285

CPC classification number: C23C16/52 ,  C23C14/22 ,  C23C16/0227 ,  C23C16/45544 ,  H01L21/28525 ,  H01L21/6715 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76843 ,  H01L23/4827 ,  H01L29/772 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.

Abstract translation: 描述了用于形成薄膜的装置和方法包括铟和砷。 特别地，这些膜可以在“负载锁定”条件下形成为两个或更多个室的构造。 这些膜可以包括作为掺杂剂的附加组分，例如铝和/或镓。 这种膜可以用于具有低接触电阻的金属/硅触点。 还公开了包括包含砷化铟的膜的装置。

公开(公告)号：US09109754B2

公开(公告)日：2015-08-18

申请号：US13653952

申请日：2012-10-17

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

IPC: F16K11/20 ,  F17D3/00

CPC classification number: F17D3/00 ,  Y10T137/7833

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

公开(公告)号：US08955547B2

公开(公告)日：2015-02-17

申请号：US13827510

申请日：2013-03-14

Applicant: Applied Materials, Inc.

Inventor： Faruk Gungor ,  Dien-Yeh Wu ,  Joseph Yudovsky ,  Mei Chang

IPC: F16K11/20 ,  F17D3/00

CPC classification number: F17D3/00 ,  F17C1/00 ,  F17C2270/0518 ,  Y10T137/7833 ,  Y10T137/8593 ,  Y10T137/87249

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

公开(公告)号：US11658014B2

公开(公告)日：2023-05-23

申请号：US16846295

申请日：2020-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Pingyan Lei ,  Dien-Yeh Wu ,  Xiao Ming He ,  Jennifer Y. Sun ,  Lei Zhou ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Mei Chang ,  Steven D. Marcus

IPC: C23C16/06 ,  C23C16/44 ,  H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  H01L21/285

CPC classification number: H01J37/32477 ,  C23C16/06 ,  C23C16/4404 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  H01J37/32467 ,  H01L21/28556 ,  H01L21/67017 ,  H01J2237/3321

Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

公开(公告)号：US11643721B2

公开(公告)日：2023-05-09

申请号：US16129232

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US11293093B2

公开(公告)日：2022-04-05

申请号：US15863203

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Feng Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US11133155B2

公开(公告)日：2021-09-28

申请号：US16578602

申请日：2019-09-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Daping Yao ,  Hyman W. H. Lam ,  John C. Forster ,  Jiang Lu ,  Can Xu ,  Dien-Yeh Wu ,  Paul F. Ma ,  Mei Chang

IPC: C23C16/52 ,  H01J37/32 ,  C23C16/513 ,  C23C16/505 ,  C23C16/455 ,  C23C16/509 ,  C23C16/06

Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

公开(公告)号：US20210283650A1

公开(公告)日：2021-09-16

申请号：US17335829

申请日：2021-06-01

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.