Forming a structure on a wafer
    58.
    发明授权
    Forming a structure on a wafer 有权
    在晶圆上形成结构

    公开(公告)号:US06638870B2

    公开(公告)日:2003-10-28

    申请号:US10044136

    申请日:2002-01-10

    IPC分类号: H01L21311

    摘要: A method for fabricating a structure on an integrated circuit (IC) wafer, includes providing a material onto a surface of the wafer and shaping the material to have a shape corresponding to the structure. The method can also include removing a remaining portion of the material, depositing a seed layer onto the wafer and the material, and depositing a photoresist on the wafer. In addition, the method can include depositing a metal layer on top of the seed layer, removing the photoresist, etching the seed layer, and etching the material. The resulting structure is usable as a compression stop, a compliant element or a rerouting layer or a combination thereof.

    摘要翻译: 一种用于在集成电路(IC)晶片上制造结构的方法,包括在晶片的表面上提供材料并使材料成形以具有与该结构相对应的形状。 该方法还可以包括去除材料的剩余部分,将晶种层沉积到晶片和材料上,以及在晶片上沉积光致抗蚀剂。 此外,该方法可以包括在种子层的顶部上沉积金属层,去除光致抗蚀剂,蚀刻种子层和蚀刻材料。 所得到的结构可用作压缩止挡,柔性元件或重路由层或其组合。