公开(公告)号：US20120007237A1

公开(公告)日：2012-01-12

申请号：US13236507

申请日：2011-09-19

申请人： Mou-Shiung Lin ,  Shih-Hsiung Lin ,  Hsin-Jung Lo

发明人： Mou-Shiung Lin ,  Shih-Hsiung Lin ,  Hsin-Jung Lo

IPC分类号： H01L23/498

CPC分类号： H01L31/0203 ,  H01L27/14618 ,  H01L27/14683 ,  H01L27/14687 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A chip package includes a bump connecting said semiconductor chip and said circuitry component, wherein the semiconductor chip has a photosensitive area used to sense light. The chip package may include a ring-shaped protrusion connecting a transparent substrate and the semiconductor chip.

摘要翻译： 芯片封装包括连接所述半导体芯片和所述电路部件的凸块，其中所述半导体芯片具有用于感测光的感光区域。 芯片封装可以包括连接透明基板和半导体芯片的环形突起。

公开(公告)号：US20110241183A1

公开(公告)日：2011-10-06

申请号：US13159368

申请日：2011-06-13

申请人： Mou-Shiung Lin ,  Shih-Hsiung Lin ,  Hsin-Jung Lo ,  Ying-Chih Chen ,  Chiu-Ming Chou

发明人： Mou-Shiung Lin ,  Shih-Hsiung Lin ,  Hsin-Jung Lo ,  Ying-Chih Chen ,  Chiu-Ming Chou

IPC分类号： H01L23/58 ,  H01L23/488

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/525 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/49 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06558 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A chip package comprises a first chip having a first side and a second side, wherein said first chip comprises a first pad, a first trace, a second pad and a first passivation layer at said first side thereof, an opening in said first passivation layer exposing said first pad, said first trace being over said first passivation layer, said first trace connecting said first pad to said second pad; a second chip having a first side and a second side, wherein said second chip comprises a first pad at said first side thereof, wherein said second side of said second chip is joined with said second side of side first chip; a substrate joined with said first side of said first chip or with said first side of said second chip; a first wirebonding wire connecting said second pad of said first chip and said substrate; and a second wirebonding wire connecting said first pad of said second chip and said substrate.

摘要翻译： 芯片封装包括具有第一侧和第二侧的第一芯片，其中所述第一芯片包括第一焊盘，第一焊盘，第二焊盘和在其第一侧的第一钝化层，所述第一钝化层中的开口 暴露所述第一焊盘，所述第一迹线在所述第一钝化层之上，所述第一迹线将所述第一焊盘连接到所述第二焊盘; 具有第一侧和第二侧的第二芯片，其中所述第二芯片包括在其第一侧的第一焊盘，其中所述第二芯片的所述第二侧与所述第二芯片的所述第二侧接合; 与所述第一芯片的所述第一侧或所述第二芯片的所述第一侧连接的衬底; 连接所述第一芯片的所述第二焊盘和所述衬底的第一引线接合线; 以及连接所述第二芯片的所述第一焊盘和所述衬底的第二引线键合线。

公开(公告)号：US20110204510A1

公开(公告)日：2011-08-25

申请号：US13098379

申请日：2011-04-29

申请人： Mou-Shiung Lin ,  Chiu-Ming Chou ,  Chien-Kang Chou ,  Hsin-Jung Lo

发明人： Mou-Shiung Lin ,  Chiu-Ming Chou ,  Chien-Kang Chou ,  Hsin-Jung Lo

IPC分类号： H01L23/485

CPC分类号： H01L23/53238 ,  H01L23/3192 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05018 ,  H01L2224/056 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/48463 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/01039 ,  H01L2224/45099 ,  H01L2924/00

摘要： A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposes said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; depositing a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposes said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first pattern-defining layer; and removing said first metal layer not under said second metal layer.

摘要翻译： 一种用于制造金属化结构的方法包括沉积第一金属层; 在所述第一金属层上沉积第一图案界定层，所述第一图案限定层中的第一开口暴露所述第一金属层; 在由所述第一开口暴露的所述第一金属层上沉积第二金属层; 在所述第二金属层上沉积第二图案限定层，所述第二图案限定层中的第二开口露出所述第二金属层; 在由所述第二开口暴露的所述第二金属层上沉积第三金属层; 去除所述第二图案限定层; 去除所述第一图案限定层; 以及不在所述第二金属层下方去除所述第一金属层。

公开(公告)号：US20110198589A1

公开(公告)日：2011-08-18

申请号：US13094780

申请日：2011-04-26

申请人： Mou-Shiung Lin ,  Huei-Mei Yen ,  Chiu-Ming Chou ,  Hsin-Jung Lo ,  Ke-Hung Chen

发明人： Mou-Shiung Lin ,  Huei-Mei Yen ,  Chiu-Ming Chou ,  Hsin-Jung Lo ,  Ke-Hung Chen

IPC分类号： H01L23/58 ,  H01L23/532

CPC分类号： H01L24/11 ,  H01L22/32 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L24/94 ,  H01L2224/02166 ,  H01L2224/0231 ,  H01L2224/03912 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05553 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

摘要： A semiconductor chip comprises a metal pad exposed by an opening in a passivation layer, wherein the metal pad has a testing area and a bond area. During a step of testing, a testing probe contacts with the testing area for electrical testing. After the step of testing, a polymer layer is formed on the testing area with a probe mark created by the testing probe. Alternatively, a semiconductor chip comprises a testing pad and a bond pad respectively exposed by two openings in a passivation layer, wherein the testing pad is connected to the bond pad. During a step of testing, a testing probe contacts with the testing pad for electrical testing. After the step of testing, a polymer layer is formed on the testing pad with a probe mark created by the testing probe.

摘要翻译： 半导体芯片包括由钝化层中的开口暴露的金属焊盘，其中金属焊盘具有测试区域和接合区域。 在测试步骤中，测试探头与测试区域接触进行电气测试。 在测试步骤之后，在测试区域上形成由测试探针产生的探针标记的聚合物层。 或者，半导体芯片包括分别由钝化层中的两个开口露出的测试焊盘和接合焊盘，其中测试焊盘连接到焊盘。 在测试步骤中，测试探针与测试垫接触进行电气测试。 在测试步骤之后，在测试垫上形成由测试探针产生的探针标记的聚合物层。

公开(公告)号：US20090108453A1

公开(公告)日：2009-04-30

申请号：US12202342

申请日：2008-09-01

申请人： Mou-Shiung Lin ,  Chiu-Ming Chou ,  Chien-Kang Chou ,  Hsin-Jung Lo

发明人： Mou-Shiung Lin ,  Chiu-Ming Chou ,  Chien-Kang Chou ,  Hsin-Jung Lo

IPC分类号： H01L23/522

CPC分类号： H01L23/53238 ,  H01L23/3192 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05018 ,  H01L2224/056 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/48463 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/01039 ,  H01L2224/45099 ,  H01L2924/00

摘要： A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposes said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; depositing a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposes said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first pattern-defining layer; and removing said first metal layer not under said second metal layer.

摘要翻译： 一种用于制造金属化结构的方法包括沉积第一金属层; 在所述第一金属层上沉积第一图案界定层，所述第一图案限定层中的第一开口暴露所述第一金属层; 在由所述第一开口暴露的所述第一金属层上沉积第二金属层; 在所述第二金属层上沉积第二图案限定层，所述第二图案限定层中的第二开口露出所述第二金属层; 在由所述第二开口暴露的所述第二金属层上沉积第三金属层; 去除所述第二图案限定层; 去除所述第一图案限定层; 以及不在所述第二金属层下方去除所述第一金属层。

公开(公告)号：US07495304B2

公开(公告)日：2009-02-24

申请号：US11422337

申请日：2006-06-06

申请人： Mou-Shiung Lin ,  Shih-Hsiung Lin ,  Hsin-Jung Lo

发明人： Mou-Shiung Lin ,  Shih-Hsiung Lin ,  Hsin-Jung Lo

IPC分类号： H01L23/02

CPC分类号： H01L31/0203 ,  H01L27/14618 ,  H01L27/14683 ,  H01L27/14687 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A chip package includes a bump connecting said semiconductor chip and said circuitry component, wherein the semiconductor chip has a photosensitive area used to sense light. The chip package may include a ring-shaped protrusion connecting a transparent substrate and the semiconductor chip.

摘要翻译： 芯片封装包括连接所述半导体芯片和所述电路部件的凸块，其中所述半导体芯片具有用于感测光的感光区域。 芯片封装可以包括连接透明基板和半导体芯片的环形突起。

公开(公告)号：US20070212869A1

公开(公告)日：2007-09-13

申请号：US11425155

申请日：2006-06-20

申请人： Chiu-Ming Chou ,  Shih-Hsiung Lin ,  Mou-Shiung Lin ,  Hsin-Jung Lo

发明人： Chiu-Ming Chou ,  Shih-Hsiung Lin ,  Mou-Shiung Lin ,  Hsin-Jung Lo

IPC分类号： H01L21/44

CPC分类号： H01L24/49 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48669 ,  H01L2224/48673 ,  H01L2224/48739 ,  H01L2224/48769 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48873 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2924/00015

摘要： This invention provides a wire bonding method, comprising providing an integrated circuit (IC) die having thereon a passivation layer and a plurality of first bonding pads exposed by respective openings in the passivation layer; forming a polymer layer on the passivation layer; forming an adhesive/barrier layer on the polymer layer; forming a metal pad layer on the adhesive/barrier layer; bonding a wire onto the metal pad layer to form a ball bond thereon; and after forming the ball bond on the metal pad layer, running the wire so as to contact the wire with a second bonding pad and forming a wedge bond thereto.

摘要翻译： 本发明提供一种引线接合方法，其包括提供其上具有钝化层的集成电路（IC）管芯和由钝化层中的相应开口暴露的多个第一接合焊盘; 在钝化层上形成聚合物层; 在聚合物层上形成粘合/阻挡层; 在粘合/阻挡层上形成金属垫层; 将金属线接合到金属垫层上以在其上形成球接合; 并且在所述金属焊盘层上形成所述焊球之后，运行所述焊丝以使所述焊丝与第二接合焊盘接触并且形成楔形键。

公开(公告)号：US20070096313A1

公开(公告)日：2007-05-03

申请号：US11262184

申请日：2005-10-28

申请人： Chiu-Ming Chou ,  Chien-Kang Chou ,  Ching-San Lin ,  Mou-Shiung Lin ,  Hsin-Jung Lo

发明人： Chiu-Ming Chou ,  Chien-Kang Chou ,  Ching-San Lin ,  Mou-Shiung Lin ,  Hsin-Jung Lo

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/73 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05155 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05553 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/48463 ,  H01L2224/48477 ,  H01L2224/4943 ,  H01L2224/85051 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/4554

摘要： The invention provides a semiconductor chip comprising an interconnecting structure over said passivation layer. The interconnecting structure comprises a first contact pad connected to a second contact pad exposed by an opening in a passivation layer. A metal bump is on the first contact pad and over multiple semiconductor devices, wherein the metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns

摘要翻译： 本发明提供一种包括在所述钝化层上的互连结构的半导体芯片。 互连结构包括连接到由钝化层中的开口暴露的第二接触焊盘的第一接触焊盘。 金属凸块位于第一接触焊盘上并且在多个半导体器件上，其中金属凸块具有超过50重量％的金并且具有在8和50微米之间的高度

公开(公告)号：US20050277283A1

公开(公告)日：2005-12-15

申请号：US11202730

申请日：2005-08-12

申请人： Mou-Shiung Lin ,  Chiu-Ming Chou ,  Chien-Kang Chou ,  Hsin-Jung Lo

发明人： Mou-Shiung Lin ,  Chiu-Ming Chou ,  Chien-Kang Chou ,  Hsin-Jung Lo

IPC分类号： H01L21/4763 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L23/3192 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05018 ,  H01L2224/056 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/48463 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/01039 ,  H01L2224/45099 ,  H01L2924/00

摘要： A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposes said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; depositing a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposes said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first pattern-defining layer; and removing said first metal layer not under said second metal layer.

摘要翻译： 一种用于制造金属化结构的方法包括沉积第一金属层; 在所述第一金属层上沉积第一图案界定层，所述第一图案限定层中的第一开口暴露所述第一金属层; 在由所述第一开口暴露的所述第一金属层上沉积第二金属层; 在所述第二金属层上沉积第二图案限定层，所述第二图案限定层中的第二开口露出所述第二金属层; 在由所述第二开口暴露的所述第二金属层上沉积第三金属层; 去除所述第二图案限定层; 去除所述第一图案限定层; 以及不在所述第二金属层下方去除所述第一金属层。