公开(公告)号：US07582966B2

公开(公告)日：2009-09-01

申请号：US11850677

申请日：2007-09-06

申请人： Mou-Shiung Lin ,  Chiu-Ming Chou

发明人： Mou-Shiung Lin ,  Chiu-Ming Chou

IPC分类号： H01L23/48

CPC分类号： H01L21/563 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/86 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05166 ,  H01L2224/05553 ,  H01L2224/05568 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13023 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13583 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13669 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/13683 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2224/16145 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48673 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06586 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A semiconductor chip includes a silicon substrate, a first dielectric layer over said silicon substrate, a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a second dielectric layer between said first and second metal layers, a passivation layer over said metallization structure and over said first and second dielectric layers, an opening in said passivation layer exposing a pad of said metallization structure, a polymer bump over said passivation layer, wherein said polymer bump has a thickness of between 5 and 25 micrometers, an adhesion/barrier layer on said pad exposed by said opening, over said passivation layer and on a top surface and a portion of sidewall(s) of said polymer bump, a seed layer on said adhesion/barrier layer; and a third metal layer on said seed layer.

摘要翻译： 半导体芯片包括硅衬底，在所述硅衬底上的第一电介质层，在所述第一介电层上的金属化结构，其中所述金属化结构包括在所述第一金属层上的第一金属层和第二金属层，第二介电层 在所述第一和第二金属层之间的钝化层，在所述金属化结构之上并且在所述第一和第二介电层上方的钝化层，所述钝化层中的开口暴露所述金属化结构的焊盘，所述钝化层上的聚合物凸块，其中所述聚合物凸块 具有5至25微米的厚度，所述焊盘上的粘附/阻挡层，由所述开口暴露在所述钝化层上，所述聚合物凸块的顶表面和侧壁的一部分上，所述 粘合/阻隔层; 以及所述籽晶层上的第三金属层。

公开(公告)号：US07148085B2

公开(公告)日：2006-12-12

申请号：US10724498

申请日：2003-12-01

申请人： Donald C. Abbott ,  Paul R. Moehle

发明人： Donald C. Abbott ,  Paul R. Moehle

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48673 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85473 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H05K3/3426 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A leadframe for use with integrated circuit chips comprising a plated layer of gold selectively covering areas of said leadframe intended for solder attachment; and said gold layer providing a visual distinction to said areas.

摘要翻译： 一种与集成电路芯片一起使用的引线框架，其包括镀金层，其选择性地覆盖用于焊接附着的所述引线框架的区域; 并说金层为所述地区提供了视觉上的区别。

公开(公告)号：US20090291554A1

公开(公告)日：2009-11-26

申请号：US12534885

申请日：2009-08-04

申请人： Mou-Shiung Lin ,  Chiu-Ming Chou

发明人： Mou-Shiung Lin ,  Chiu-Ming Chou

IPC分类号： H01L21/768

CPC分类号： H01L21/563 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/86 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05166 ,  H01L2224/05553 ,  H01L2224/05568 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13023 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13583 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13669 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/13683 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2224/16145 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48673 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06586 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A semiconductor chip includes a silicon substrate, a first dielectric layer over said silicon substrate, a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a second dielectric layer between said first and second metal layers, a passivation layer over said metallization structure and over said first and second dielectric layers, an opening in said passivation layer exposing a pad of said metallization structure, a polymer bump over said passivation layer, wherein said polymer bump has a thickness of between 5 and 25 micrometers, an adhesion/barrier layer on said pad exposed by said opening, over said passivation layer and on a top surface and a portion of sidewall(s) of said polymer bump, a seed layer on said adhesion/barrier layer; and a third metal layer on said seed layer.

摘要翻译： 半导体芯片包括硅衬底，在所述硅衬底上的第一电介质层，在所述第一介电层上的金属化结构，其中所述金属化结构包括在所述第一金属层上的第一金属层和第二金属层，第二介电层 在所述第一和第二金属层之间的钝化层，在所述金属化结构之上并且在所述第一和第二介电层上方的钝化层，所述钝化层中的开口暴露所述金属化结构的焊盘，所述钝化层上的聚合物凸块，其中所述聚合物凸块 具有5至25微米的厚度，所述焊盘上的粘附/阻挡层，由所述开口暴露在所述钝化层上，所述聚合物凸块的顶表面和侧壁的一部分上，所述 粘合/阻隔层; 以及所述籽晶层上的第三金属层。

公开(公告)号：US20040113241A1

公开(公告)日：2004-06-17

申请号：US10724498

申请日：2003-12-01

发明人： Donald C. Abbott ,  Paul R. Moehle

IPC分类号： H01L023/495

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48673 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85473 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H05K3/3426 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A leadframe for use with integrated circuit chips comprising a plated layer of gold selectively covering areas of said leadframe intended for solder attachment; and said gold layer providing a visual distinction to said areas.

摘要翻译： 一种与集成电路芯片一起使用的引线框架，其包括镀金层，其选择性地覆盖用于焊接附着的所述引线框架的区域; 并说金层为所述地区提供了视觉上的区别。

公开(公告)号：US20030107112A1

公开(公告)日：2003-06-12

申请号：US10303617

申请日：2002-11-25

发明人： John P. Tellkamp

IPC分类号： H01L023/495

CPC分类号： H01L24/48 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48673 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85473 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A leadframe for use with integrated circuit chips comprising a leadframe base made of aluminum or aluminum alloy having a surface layer of zinc; a first layer of nickel on said zinc layer, said first nickel layer deposited to be compatible with aluminum and zinc; a layer of an alloy of nickel and a noble metal on said first nickel layer; a second layer of nickel on said alloy layer, said second nickel layer deposited to be suitable for lead bending and solder attachment; and an outermost layer of noble metal, whereby said leadframe is suitable for solder attachment to other parts, for wire bonding, and for corrosion protection.

摘要翻译： 一种用于集成电路芯片的引线框架，包括由具有锌表面层的铝或铝合金制成的引线框架基座; 所述锌层上的第一层镍，所述第一镍层沉积成与铝和锌相容; 在所述第一镍层上的镍和贵金属的合金层; 在所述合金层上的第二层镍层，所述第二镍层沉积成适合于引线弯曲和焊料附着; 和最外层的贵金属，由此所述引线框适用于焊接附着到其它部分，用于引线接合和用于防腐蚀。

公开(公告)号：US08168527B2

公开(公告)日：2012-05-01

申请号：US12534885

申请日：2009-08-04

申请人： Mou-Shiung Lin ,  Chiu-Ming Chou

发明人： Mou-Shiung Lin ,  Chiu-Ming Chou

IPC分类号： H01L21/768

CPC分类号： H01L21/563 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/86 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05166 ,  H01L2224/05553 ,  H01L2224/05568 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13023 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13583 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13669 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/13683 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2224/16145 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48673 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06586 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A semiconductor chip includes a silicon substrate, a first dielectric layer over said silicon substrate, a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a second dielectric layer between said first and second metal layers, a passivation layer over said metallization structure and over said first and second dielectric layers, an opening in said passivation layer exposing a pad of said metallization structure, a polymer bump over said passivation layer, wherein said polymer bump has a thickness of between 5 and 25 micrometers, an adhesion/barrier layer on said pad exposed by said opening, over said passivation layer and on a top surface and a portion of sidewall(s) of said polymer bump, a seed layer on said adhesion/barrier layer; and a third metal layer on said seed layer.

摘要翻译： 半导体芯片包括硅衬底，在所述硅衬底上的第一电介质层，在所述第一介电层上的金属化结构，其中所述金属化结构包括在所述第一金属层上的第一金属层和第二金属层，第二介电层 在所述第一和第二金属层之间的钝化层，在所述金属化结构之上并且在所述第一和第二介电层上方的钝化层，所述钝化层中的开口暴露所述金属化结构的焊盘，所述钝化层上的聚合物凸块，其中所述聚合物凸块 具有5至25微米的厚度，所述焊盘上的粘附/阻挡层，由所述开口暴露在所述钝化层上，所述聚合物凸块的顶表面和侧壁的一部分上，所述 粘合/阻隔层; 以及所述籽晶层上的第三金属层。

公开(公告)号：US20040188810A1

公开(公告)日：2004-09-30

申请号：US10818841

申请日：2004-04-05

发明人： John P. Tellkamp

IPC分类号： H01L023/58

CPC分类号： H01L24/48 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48673 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85473 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A leadframe for use with integrated circuit chips comprising a leadframe base made of aluminum or aluminum alloy having a surface layer of zinc; a first layer of nickel on said zinc layer, said first nickel layer deposited to be compatible with aluminum and zinc; a layer of an alloy of nickel and a noble metal on said first nickel layer; a second layer of nickel on said alloy layer, said second nickel layer deposited to be suitable for lead bending and solder attachment; and an outermost layer of noble metal, whereby said leadframe is suitable for solder attachment to other parts, for wire bonding, and for corrosion protection.

摘要翻译： 一种用于集成电路芯片的引线框架，包括由具有锌表面层的铝或铝合金制成的引线框架基座; 所述锌层上的第一层镍，所述第一镍层沉积成与铝和锌相容; 在所述第一镍层上的镍和贵金属的合金层; 在所述合金层上的第二层镍层，所述第二镍层沉积成适合于引线弯曲和焊料附着; 和最外层的贵金属，由此所述引线框适用于焊接附着到其它部分，用于引线接合和用于防腐蚀。

公开(公告)号：US20030107137A1

公开(公告)日：2003-06-12

申请号：US09963066

申请日：2001-09-24

发明人： Roger J. Stierman ,  Seth Miller ,  Howard R. Test ,  Christo P. Bojkov ,  John P. Harris ,  Reynaldo M. Rincon ,  Scott W. Mitchell ,  Gonzalo Amador

IPC分类号： H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC分类号： H01L24/05 ,  B81B7/0006 ,  B81C1/00833 ,  B81C99/0045 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/0516 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05172 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05178 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05183 ,  H01L2224/05184 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48673 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/78252 ,  H01L2224/78253 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/01004 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/206

摘要： A microelectronic mechanical structure (MEMS) comprising a semiconductor chip having an integrated circuit including a plurality of micromechanical components, and a plurality of conductive routing lines integral with the chip; the routing lines having contact terminals of oxide-free metal; and the terminals having a layer of barrier metal on the oxide-free metal and an outermost layer of noble metal, whereby damage-free testing of the circuit is possible using test probe needles. The barrier metal is selected from a group consisting of nickel, cobalt, chromium, molybdenum, titanium, tungsten, tantalum, palladium, platinum, rhodium, rhenium, osmium, vanadium, iron, ruthenium, niobium, iridium, zirconium, hafnium, copper, and alloys thereof. Alloys of these metals may contain phosphorus or boron. The outermost layer is a noble metal which is bondable or solderable, and is selected from a group consisting of gold, platinum, palladium, silver, rhodium, and copper. Alloys of these metals may contain phosphorus or boron.

摘要翻译： 一种微电子机械结构（MEMS），包括具有包括多个微机械部件的集成电路的半导体芯片和与所述芯片成一体的多个导电布线线路; 所述布线线具有无氧化物金属的接触端子; 并且端子在无氧化物金属上具有阻挡金属层和贵金属的最外层，由此可以使用测试探针针对电路进行无损检测。 阻挡金属选自镍，钴，铬，钼，钛，钨，钽，钯，铂，铑，铼，锇，钒，铁，钌，铌，铱，锆，铪，铜， 及其合金。 这些金属的合金可以含有磷或硼。 最外层是可结合或可焊接的贵金属，并且选自由金，铂，钯，银，铑和铜组成的组。 这些金属的合金可以含有磷或硼。

公开(公告)号：US20030011048A1

公开(公告)日：2003-01-16

申请号：US09525105

申请日：2000-03-14

发明人： Donald C. Abbott ,  Paul R. Moehle

IPC分类号： H01L021/48 ,  H01L023/495 ,  H01L029/40

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48673 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85473 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H05K3/3426 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A leadframe for use with integrated circuit chips comprising a plated layer of gold selectively covering areas of said leadframe intended for solder attachment; and said gold layer providing a visual distinction to said areas.

摘要翻译： 一种与集成电路芯片一起使用的引线框架，其包括镀金层，其选择性地覆盖用于焊接附着的所述引线框架的区域; 并说金层为所述地区提供了视觉上的区别。

公开(公告)号：US08344524B2

公开(公告)日：2013-01-01

申请号：US11425155

申请日：2006-06-20

申请人： Chiu-Ming Chou ,  Shih-Hsiung Lin ,  Mou-Shiung Lin ,  Hsin-Jung Lo

发明人： Chiu-Ming Chou ,  Shih-Hsiung Lin ,  Mou-Shiung Lin ,  Hsin-Jung Lo

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L24/49 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48669 ,  H01L2224/48673 ,  H01L2224/48739 ,  H01L2224/48769 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48873 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2924/00015

摘要： This invention provides a wire bonding method, comprising providing an integrated circuit (IC) die having thereon a passivation layer and a plurality of first bonding pads exposed by respective openings in the passivation layer; forming a polymer layer on the passivation layer; forming an adhesive/barrier layer on the polymer layer; forming a metal pad layer on the adhesive/barrier layer; bonding a wire onto the metal pad layer to form a ball bond thereon; and after forming the ball bond on the metal pad layer, running the wire so as to contact the wire with a second bonding pad and forming a wedge bond thereto.

摘要翻译： 本发明提供一种引线接合方法，其包括提供其上具有钝化层的集成电路（IC）管芯和由钝化层中的相应开口暴露的多个第一接合焊盘; 在钝化层上形成聚合物层; 在聚合物层上形成粘合/阻挡层; 在粘合/阻挡层上形成金属垫层; 将金属线接合到金属垫层上以在其上形成球接合; 并且在所述金属焊盘层上形成所述焊球之后，运行所述焊丝以使所述焊丝与第二接合焊盘接触并且形成楔形键。