公开(公告)号：US20090001412A1

公开(公告)日：2009-01-01

申请号：US12163039

申请日：2008-06-27

申请人： Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

发明人： Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

IPC分类号： H01L31/0336 ,  H01L31/18

CPC分类号： H01L27/14643 ,  H01L27/14694 ,  H01L31/101 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.

摘要翻译： 本发明提供了一种具有在近红外区域具有灵敏度并且抑制暗电流的含N的InGaAs基吸收层的光电检测器及其制造方法。 光电检测器设置有InP基板1，位于InP基板1上方的含有N的InGaAs基吸收层3，位于含N的InGaAs基吸收层3上方的窗口层5和InGaAs缓冲层4 位于含N的InGaAs基吸收层3和窗口层5之间。

公开(公告)号：US20110261359A1

公开(公告)日：2011-10-27

申请号：US13142039

申请日：2009-07-30

申请人： Hiroshi Inada ,  Youichi Nagai

发明人： Hiroshi Inada ,  Youichi Nagai

IPC分类号： G01N21/59

CPC分类号： G01J5/602 ,  G01J5/0044 ,  G01J2005/0077 ,  G01N21/3504 ,  G01N21/359 ,  G01N2021/3531 ,  G01N2201/0833 ,  G01N2201/0846 ,  H01L31/035209 ,  H01L31/1035 ,  H01L2224/48091 ,  H01L2924/00014

摘要： [Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more.[Solution] An absorption layer 3 has a multiquantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusion of an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less. The gas monitoring device detects a gas component and the like contained in a gas by receiving light having at least one wavelength of 3 μm or less.

摘要翻译： [目的]提供一种气体监测装置等，通过使用其中暗电流降低而没有冷却机构的InP基光电二极管，可以以高灵敏度进行气体监测，并且灵敏度延伸到1.8μm的波长 或者更多。 [解决方案]吸收层3具有由III-V族半导体构成的多量子阱结构，通过在吸收层中选择性地扩散杂质元素而形成pn结15，并且吸收层中杂质元素的浓度 为5×1016 / cm3以下。 气体监测装置通过接收至少一个波长为3μm以下的光来检测包含在气体中的气体成分等。

公开(公告)号：US08174118B2

公开(公告)日：2012-05-08

申请号：US12651633

申请日：2010-01-04

申请人： Youichi Nagai ,  Hiroshi Inada

发明人： Youichi Nagai ,  Hiroshi Inada

IPC分类号： H01L23/48

CPC分类号： H01L27/14683 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2224/02122 ,  H01L2224/0401 ,  H01L2224/06179 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11622 ,  H01L2224/1184 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/14179 ,  H01L2224/14505 ,  H01L2224/14515 ,  H01L2224/16148 ,  H01L2224/27334 ,  H01L2224/2745 ,  H01L2224/2747 ,  H01L2224/2761 ,  H01L2224/27622 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/81007 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/819 ,  H01L2224/83203 ,  H01L2224/839 ,  H01L2224/92 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/12036 ,  H01L2924/12043 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

摘要： A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the light-receiving element array and/or the read-out circuit multiplexer on which the bumps are provided, and pressing a flat plate on the tops of the bumps and deforming the bumps until the flat plate comes in contact with the end of the bump height adjusting member.

摘要翻译： 一种检测装置的制造方法，包括以下步骤：在受光元件阵列和读出电路多路复用器中的至少一个上设置接合凸块，固定凸起高度调节构件，用于将凸块的高度调节到发光元件阵列， 接收元件阵列和/或其上设置有凸块的读出电路多路复用器，并且在凸块的顶部上按压平板并使凸块变形，直到平板与凸块高度调节构件的端部接触 。

公开(公告)号：US08378300B2

公开(公告)日：2013-02-19

申请号：US12689550

申请日：2010-01-19

申请人： Hiroshi Inada ,  Youichi Nagai

发明人： Hiroshi Inada ,  Youichi Nagai

IPC分类号： G01J5/02

CPC分类号： H01L27/14618 ,  G02B5/1876 ,  H01L27/14625 ,  H01L27/14649 ,  H01L27/14694 ,  H01L2924/0002 ,  H01L2924/00

摘要： A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 μm and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 μm.

摘要翻译： 根据本发明的近红外成像传感器包括对波长为1.2至3μm的光敏感的光电二极管阵列和包括信号读出电路的多路复用器。 近红外成像传感器被包含在壳体中并被真空密封。 壳体包括主体部分和覆盖主体部分的盖子。 该盖由对透明至波长为1.2至3μm的光的材料制成。

公开(公告)号：US08624189B2

公开(公告)日：2014-01-07

申请号：US13142039

申请日：2009-07-30

申请人： Hiroshi Inada ,  Youichi Nagai

发明人： Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0248

CPC分类号： G01J5/602 ,  G01J5/0044 ,  G01J2005/0077 ,  G01N21/3504 ,  G01N21/359 ,  G01N2021/3531 ,  G01N2201/0833 ,  G01N2201/0846 ,  H01L31/035209 ,  H01L31/1035 ,  H01L2224/48091 ,  H01L2924/00014

摘要： [Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more.[Solution] An absorption layer 3 has a multiquantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusion of an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less. The gas monitoring device detects a gas component and the like contained in a gas by receiving light having at least one wavelength of 3 μm or less.

摘要翻译： [目的]提供一种气体监测装置等，通过使用其中暗电流减小而不具有冷却机制的InP基光电二极管，可以以高灵敏度进行气体监测，并且灵敏度延伸至1.8μm的波长 或者更多。 [解决方案]吸收层3具有由III-V族半导体构成的多量子阱结构，通过在吸收层中选择性地扩散杂质元素而形成pn结15，并且吸收层中杂质元素的浓度 为5×1016 / cm3以下。 气体监测装置通过接收至少一个波长为3μm或更小的光来检测包含在气体中的气体成分等。

公开(公告)号：US20100207138A1

公开(公告)日：2010-08-19

申请号：US12767783

申请日：2010-04-26

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/30 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US07560740B2

公开(公告)日：2009-07-14

申请号：US11361144

申请日：2006-02-23

申请人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

发明人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/10157 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.

摘要翻译： 提出了一种发光器件，其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层（n型Al x Ga 1-x N 3） 与n型氮化物半导体衬底层相比更远离GaN衬底1设置的p型氮化物半导体衬底层（p型Al x Ga 1-x N层5） 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层（多量子阱（MQW）4）。 p型氮化物半导体层侧被下放。 此外，从与GaN衬底1的第一主表面相对的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。 槽80包括在其上进行表面处理以平滑内周表面的截面（曲面部分）。

公开(公告)号：US07476909B2

公开(公告)日：2009-01-13

申请号：US11311638

申请日：2005-12-20

申请人： Youichi Nagai ,  Hiroyuki Kitabayashi ,  Hirohisa Saito ,  Ayako Ikeda

发明人： Youichi Nagai ,  Hiroyuki Kitabayashi ,  Hirohisa Saito ,  Ayako Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/22 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/10155 ,  H01L2924/10253 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/01005

摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.

摘要翻译： 获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上 氮化物半导体衬底，n型Al x Ga 1-x N层，从氮化物半导体衬底观察的位于比n型Al x Ga 1-x N层更远的p型Al x Ga 1-x N层，以及位于n型Al x Ga 1-x N层之间的量子阱 -xN层和p型Al x Ga 1-x N层。 在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的侧面朝下地安装，并且从第二主表面1a射出光 与氮化物半导体衬底的第一主表面相对。 氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。

公开(公告)号：US20070164306A1

公开(公告)日：2007-07-19

申请号：US10598934

申请日：2005-05-13

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 本发明提供适合于半导体器件的尺寸的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始衬底分离由III族氮化物半导体晶体衬底和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US5908480A

公开(公告)日：1999-06-01

申请号：US828713

申请日：1997-03-28

申请人： Shunsuke Ban ,  Youichi Nagai ,  Kiyoshi Kobashi ,  Hiromichi Yanagihara

发明人： Shunsuke Ban ,  Youichi Nagai ,  Kiyoshi Kobashi ,  Hiromichi Yanagihara

IPC分类号： F01N3/02 ,  B01D29/07 ,  B01D39/20 ,  B01D46/00 ,  B01D46/24 ,  B01J35/04 ,  B01J35/06 ,  F01N3/022 ,  F01N3/28

CPC分类号： B01D46/247 ,  B01D39/2041 ,  B01D39/2082 ,  B01D46/2455 ,  B01J35/04 ,  B01J35/06 ,  F01N3/0222 ,  F01N3/0226 ,  F01N3/281 ,  F01N3/2882 ,  B01D2046/2488 ,  B01D2046/2492 ,  B01D2239/0457 ,  B01D2239/0471 ,  B01D2239/065 ,  B01D2239/069 ,  B01D2239/0695 ,  B01D2273/18 ,  B01D46/2451 ,  B01D46/2459 ,  B01D46/2466 ,  Y02T10/20 ,  Y10S55/30

摘要： A particulate trap for use in a diesel engine which is inexpensive, and which is high in particulate trapping efficiency, regeneration properties and durability, and low in pressure loss due to particulates trapped. An even number of flat filters made from a non-woven fabric of heat-resistant metallic fiber are laminated alternately with the same number of corrugated sheets made of a heat-resistant metal. The laminate thus formed are rolled into a columnar shape. Each space between the adjacent flat filters in which every other corrugated sheet is inserted is closed at one end of the filter element by a closure member. The other spaces between the adjacent flat filters are closed at the other end of the filter element.

摘要翻译： 用于柴油发动机的颗粒捕集器，其价格便宜，并且具有高的颗粒捕获效率，再生性能和耐久性，以及由于捕获的微粒导致的压力损失低。 由耐热金属纤维的无纺布制成的偶数个扁平过滤器与相同数量的由耐热金属制成的波纹片交替层叠。 将如此形成的层压体卷成柱状。 其中每隔一个波纹片插入的相邻扁平过滤器之间的每个空间在过滤元件的一端通过封闭构件封闭。 相邻扁平过滤器之间的其他空间在过滤元件的另一端封闭。