Micro LED with wavelength conversion layer
    51.
    发明授权
    Micro LED with wavelength conversion layer 有权
    微型LED与波长转换层

    公开(公告)号:US09484504B2

    公开(公告)日:2016-11-01

    申请号:US13894255

    申请日:2013-05-14

    Abstract: A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device bonded to a bottom electrode, a top electrode in electrical contact with the micro LED device, and a wavelength conversion layer around the micro LED device. The wavelength conversion layer includes phosphor particles. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition.

    Abstract translation: 描述了一种发光器件及其制造方法。 在一个实施例中,发光器件包括结合到底部电极的微型LED器件,与微型LED器件电接触的顶部电极以及围绕微型LED器件的波长转换层。 波长转换层包括磷光体颗粒。 示例性荧光体颗粒包括由于其尺寸而显示发光的量子点或由于其组成而显示发光的颗粒。

    Compliant micro device transfer head array with metal electrodes
    59.
    发明授权
    Compliant micro device transfer head array with metal electrodes 有权
    具有金属电极的符合微器件传输头阵列

    公开(公告)号:US09236815B2

    公开(公告)日:2016-01-12

    申请号:US13710442

    申请日:2012-12-10

    CPC classification number: H02N13/00 B81C99/002 Y10T279/23

    Abstract: Compliant monopolar and bipolar micro device transfer head arrays and methods of formation from SOI substrates are described. In an embodiment, an array of compliant transfer heads are formed over a base substrate and deflectable toward the base substrate, and a patterned metal layer includes a metal interconnect layer electrically connected with an array of the metal electrodes in the array of compliant transfer heads.

    Abstract translation: 描述了合适的单极和双极微器件转移头阵列和从SOI衬底形成的方法。 在一个实施例中,柔性传送头阵列形成在基底基板上并且可朝向基底基板偏转,并且图案化金属层包括金属互连层,金属互连层与柔性传送头阵列中的金属电极阵列电连接。

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