公开(公告)号：US09076601B2

公开(公告)日：2015-07-07

申请号：US13498953

申请日：2010-09-29

申请人： Takanori Yamashita ,  Hirohisa Akita ,  Noboru Akiyama ,  Masataka Okushita

发明人： Takanori Yamashita ,  Hirohisa Akita ,  Noboru Akiyama ,  Masataka Okushita

IPC分类号： G01R31/28 ,  G01R31/08 ,  H01H31/12 ,  G01R31/06 ,  H01G11/14 ,  H01G11/06 ,  H01G11/80 ,  H01M10/48 ,  H01M10/04 ,  H01M10/0525

CPC分类号： G01R31/3641 ,  G01R31/025 ,  G01R31/12 ,  G01R31/1263 ,  H01G11/06 ,  H01G11/14 ,  H01G11/20 ,  H01G11/80 ,  H01G11/82 ,  H01M10/04 ,  H01M10/0525 ,  H01M10/48 ,  Y02E60/13 ,  Y10T29/49004

摘要： A method for manufacturing an electrochemical cell includes housing a main cell body in an outer packaging body of packaging material formed by laminating a metal foil layer and a heat-sealable resin layer, provided the tip ends of a first metal terminal and a second metal terminal are protruding outside the outer packaging body, heat-sealing a peripheral edge portion of the outer packaging body so the outer packaging body has the first and second terminals protruding; applying a voltage between the first terminal and the foil layer or between the second terminal and the foil layer; and inspecting for insulation failure from a short circuit between the first or second terminal and the foil layer or from a crack in the heat-sealable resin layer, based on a variation of a voltage held between the one of the metal terminals and the metal foil layer after halting the voltage.

摘要翻译： 一种电化学电池的制造方法，其特征在于，在第一金属端子和第二金属端子的前端设置有通过层叠金属箔层和可热封树脂层而形成的包装材料的外包装体中的主电池体 在外包装体的外侧突出，热封外包装体的周缘部，使得外包装体具有突出的第一和第二端子; 在第一端子和箔层之间或第二端子和箔层之间施加电压; 并且基于金属端子和金属箔之间保持的电压的变化来检查第一或第二端子与箔层之间的短路或可热封树脂层中的裂纹的绝缘故障 停止电压后的层。

公开(公告)号：US08345458B2

公开(公告)日：2013-01-01

申请号：US13293194

申请日：2011-11-10

申请人： Masaki Shiraishi ,  Noboru Akiyama ,  Tomoaki Uno ,  Nobuyoshi Matsuura

发明人： Masaki Shiraishi ,  Noboru Akiyama ,  Tomoaki Uno ,  Nobuyoshi Matsuura

IPC分类号： H02M1/10 ,  H01L23/48 ,  H05K7/02

CPC分类号： G05F3/08 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/16 ,  H01L29/1095 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7835 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85375 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided having a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.

摘要翻译： 为了减少电源电路中的主电路的寄生电感，提供了一种非绝缘DC-DC转换器，其具有电路，其中用于高侧开关的功率MOS•FET和功率MOS•FET用于 低侧开关串联连接。 在非绝缘DC-DC转换器中，高侧开关的功率MOS•FET由ap沟道垂直MOS•FET形成，低边开关功率MOS•FET由n沟道垂直 MOS•FET。 因此，形成有用于高侧开关的功率MOS·FET的半导体芯片和形成有用于低侧开关的功率MOS·FET的半导体芯片安装在相同的芯片焊盘上，并且通过 芯片垫

公开(公告)号：US08125206B2

公开(公告)日：2012-02-28

申请号：US12143305

申请日：2008-06-20

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno

IPC分类号： G05F1/40

CPC分类号： H02M3/1588 ,  Y02B70/1466

摘要： A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.

摘要翻译： 电源控制IC包括在开关电源中，该开关电源驱动以串联连接到直流电源的半导体开关装置，以向外部负载提供预定的恒定电压，并且是包括 控制半导体开关器件的导通和截止的半导体电路。 当流过负载的电流突然增加以在与开关周期同步产生的PWM导通脉冲结束之后导致误差电压超过预定的第一阈值电压时，在同一时间内产生第二PWM导通脉冲 开关周期。 此外，在产生第二PWM导通脉冲的开关周期之后的多个开关周期中，与误差电压进行比较的第一阈值电压被切换到高于第一阈值电压的第二阈值电压。

公开(公告)号：US08064235B2

公开(公告)日：2011-11-22

申请号：US12912796

申请日：2010-10-27

申请人： Masaki Shiraishi ,  Noboru Akiyama ,  Tomoaki Uno ,  Nobuyoshi Matsuura

发明人： Masaki Shiraishi ,  Noboru Akiyama ,  Tomoaki Uno ,  Nobuyoshi Matsuura

IPC分类号： H02M1/00 ,  H01L23/48 ,  H05K7/02

CPC分类号： G05F3/08 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/16 ,  H01L29/1095 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7835 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85375 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided including a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p-channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.

摘要翻译： 为了减少电源电路中的主电路的寄生电感，提供了一种非绝缘DC-DC转换器，其包括其中用于高侧开关的功率MOS•FET和功率MOS•FET用于 低侧开关串联连接。 在非绝缘DC-DC转换器中，高侧开关的功率MOS•FET由p沟道垂直MOS•FET形成，而低边开关的功率MOS•FET由n形成 通道垂直MOS•FET。 因此，形成有用于高侧开关的功率MOS·FET的半导体芯片和形成有用于低侧开关的功率MOS·FET的半导体芯片安装在相同的芯片焊盘上，并且通过 芯片垫

公开(公告)号：US08044520B2

公开(公告)日：2011-10-25

申请号：US11624767

申请日：2007-01-19

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Masaki Shiraishi ,  Tetsuya Kawashima ,  Koji Tateno ,  Nobuyoshi Matsuura

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Masaki Shiraishi ,  Tetsuya Kawashima ,  Koji Tateno ,  Nobuyoshi Matsuura

IPC分类号： H01L23/52 ,  H01L29/40

CPC分类号： H01L25/16 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/05554 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H02M3/1588 ,  H03K17/08142 ,  H03K17/162 ,  H03K17/6871 ,  H03K2217/0036 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.

摘要翻译： 一种能够减少大电流和高频损耗的电源。 在用于电源的MCM中，高边功率MOSFET芯片，低边功率MOSFET芯片和驱动IC芯片驱动它们被密封在一个密封材料（封装绝缘树脂）中，布线DL的布线长度 将驱动IC芯片的输出端子与低边功率MOSFET芯片的栅极端子或源极端子连接的时间短于连接驱动器IC芯片的输出端子与栅极端子的布线DH的布线长度 高端功率MOSFET芯片或源极端子。 此外，使布线数量DL大于布线数量DH。

公开(公告)号：US07928505B2

公开(公告)日：2011-04-19

申请号：US12326392

申请日：2008-12-02

申请人： Takashi Hirao ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Takashi Hirao ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

摘要： The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.

摘要翻译： 垂直沟槽MOSFET包括：形成在其下表面上具有漏电极的N +型衬底的上表面上的N型外延区域; 栅极沟槽，其从前表面延伸到N型外延区域; 位于所述栅极沟槽中以便插入绝缘体的栅电极; 形成在N型外延区上的沟道区; 形成在沟道区上的源极区; 形成在源极区上的源电极; 源极沟槽，其从前表面延伸到N型外延区域; 以及位于所述源极沟槽中以便插入绝缘体的沟槽埋入式源电极，其中所述源电极与所述沟槽埋入式源极接触。

公开(公告)号：US07821243B2

公开(公告)日：2010-10-26

申请号：US11624837

申请日：2007-01-19

申请人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： G05F1/595

CPC分类号： H02M1/08 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/166 ,  H03K17/6871 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

摘要翻译： 在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位， 低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动 并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。

公开(公告)号：US20090207640A1

公开(公告)日：2009-08-20

申请号：US12430972

申请日：2009-04-28

申请人： Masaki Shiraishi ,  Noboru Akiyama ,  Tomoaki Uno ,  Nobuyoshi Matsuura

发明人： Masaki Shiraishi ,  Noboru Akiyama ,  Tomoaki Uno ,  Nobuyoshi Matsuura

IPC分类号： H02M1/00 ,  H01L23/48

CPC分类号： G05F3/08 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/16 ,  H01L29/1095 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7835 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85375 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The object of the present invention is to reduce parasitic inductance of a main circuit in a power supply circuit. The present invention provides a non-insulated DC-DC converter having a circuit in which a power MOS*FET for a high-side switch and a power MOS*FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS*FET for the high-side switch is formed by a p channel vertical MOS*FET, and the power MOS*FET for the low-side switch is formed by an n channel vertical MOS*FET. Thus, a semiconductor chip formed with the power MOS*FET for the high-side switch and a semiconductor chip formed with the power MOS*FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.

摘要翻译： 本发明的目的是减少电源电路中的主电路的寄生电感。 本发明提供了一种非绝缘DC-DC转换器，其具有用于高侧开关的功率MOS * FET和用于低侧开关的功率MOS * FET串联连接的电路。 在非绝缘DC-DC转换器中，用于高侧开关的功率MOS * FET由ap沟道垂直MOS * FET形成，低边开关的功率MOS * FET由n沟道垂直 MOS * FET。 因此，形成有用于高侧开关的功率MOS * FET和形成有用于低侧开关的功率MOS * FET的半导体芯片的半导体芯片安装在相同的芯片焊盘上，并通过 芯片垫

公开(公告)号：US20090145147A1

公开(公告)日：2009-06-11

申请号：US12368681

申请日：2009-02-10

申请人： Yasuyuki Kojima ,  Noboru Akiyama ,  Takeshi Onaka ,  Tatsumi Yamauchi ,  Koichi Taniguchi ,  Koichi Tokushige ,  Noriyuki Bunkou ,  Keiji Sato

发明人： Yasuyuki Kojima ,  Noboru Akiyama ,  Takeshi Onaka ,  Tatsumi Yamauchi ,  Koichi Taniguchi ,  Koichi Tokushige ,  Noriyuki Bunkou ,  Keiji Sato

IPC分类号： G05D23/00 ,  F25D23/00

CPC分类号： F24F1/0003 ,  F24F11/30 ,  F24F11/54

摘要： An air conditioning system is arranged to use a power line for communication. The air conditioning system includes one or more indoor units, one or more outdoor units, and a system controller for controlling the indoor units or outdoor units and executes communications between the indoor units and the outdoor units as overlapping a signal on the power line for supplying electric power. The outdoor units are connected with the system controller through a leased communication line. The indoor unit provides a power line communication device being connected with the power line. The outdoor unit provides a leased communication device being connected with the leased communication line. A bridge is also provided for connecting the leased communication line and the power line. The control information is exchanged mutually between the indoor units, the outdoor units and the system controller through the power line.

摘要翻译： 一个空调系统被设置为使用电力线进行通信。 空调系统包括一个或多个室内单元，一个或多个室外单元，以及用于控制室内单元或室外单元的系统控制器，并且执行室内单元和室外单元之间的通信，以与用于供应的电力线上的信号重叠 电力。 室外机通过租用通信线与系统控制器连接。 室内机提供与电力线连接的电力线通信装置。 户外单元提供与租用通信线路连接的租用通信设备。 还提供了用于连接租用通信线路和电力线路的桥梁。 控制信息通过电力线在室内机，室外机和系统控制器之间相互交换。

公开(公告)号：US20070278516A1

公开(公告)日：2007-12-06

申请号：US11809023

申请日：2007-05-30

申请人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

IPC分类号： H01L31/111

CPC分类号： H01L25/16 ,  G06F1/26 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0603 ,  H01L2224/40 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETS, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.

摘要翻译： 本发明提供一种降低电源单元的主电路的寄生电感的技术。 在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是 由n沟道垂直MOSFETS形成，并且用于高侧开关的功率MOSFET的源极和用于低侧开关的功率MOSFET的漏电极经由相同的管芯焊盘电连接。