Abstract:
An optelectonic arrangement and a lighting device are disclosed. In an embodiment the arrangement includes a semiconductor chip for generating radiation and a radiation conversion element located downstream of the semiconductor chip with respect to a radiation direction, wherein the radiation conversion element includes a plurality of conversion bodies each with a longitudinal extension axis, and wherein a spatial orientation of the longitudinal extension axes has a preferred direction.
Abstract:
An optoelectronic component includes an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged, wherein the first surface adjoins a molded body, a first pin and a second pin are embedded in the molded body and electrically conductively connect to the first contact and the second contact, and a protection diode is embedded in the molded body and electrically conductively connect to the first contact and the second contact.
Abstract:
In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.
Abstract:
A method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.
Abstract:
An optoelectronic semiconductor component includes an optoelectronic semiconductor chip and an optical element. A connecting layer includes a transparent oxide arranged between the semiconductor chip and the optical element. The connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip. A method for fabricating an optoelectronic semiconductor component is furthermore specified.
Abstract:
A display device includes at least one semiconductor body, which has a semiconductor layer sequence, which has an active region provided for producing radiation and forms a plurality of pixels. The device also includes a driver circuit that has a plurality of switches, which are each provided for controlling at least one pixel. A first metallization layer and/or the second metallization layer are electroconductively connected to at least one of the pixels. The first metallization layer and the second metallization layer are arranged overlapping one another in such a manner that, in a plan view onto the display device, the driver circuit is covered with at least one of the metallization layers at every point which overlaps with one of the pixels or is arranged between two adjacent pixels.
Abstract:
An optoelectronic semiconductor component includes an optoelectronic semiconductor chip and an optical element. A connecting layer includes a transparent oxide arranged between the semiconductor chip and the optical element. The connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip. A method for fabricating an optoelectronic semiconductor component is furthermore specified.
Abstract:
An optoelectronic semiconductor module includes a plurality of light-emitting areas, which emit light when in operation. At least two abutting lateral edges of at least one light-emitting area are arranged at an angle of more than 0 degrees and less than 90 degrees to each other. Further embodiments relate to a display having a plurality of such modules.
Abstract:
In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 μm and 200 μm inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO3/2 units.
Abstract:
A radiation-emitting component is disclosed. In an embodiment a radiation-emitting component includes a radiation-emitting semiconductor chip and a transparent joining layer mechanically stably connecting the radiation-emitting semiconductor chip with a carrier, wherein the transparent joining layer comprises a matrix material in which a plurality of nanoparticles are located.