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    Process for producing an aromatic urethane
    51.
    发明授权
    Process for producing an aromatic urethane 失效
    芳香族聚氨酯的制造方法

    公开(公告)号：US4186269A

    公开(公告)日：1980-01-29

    申请号：US645712

    申请日：1975-12-31

    申请人： Yutaka Hirai ,  Katsuharu Miyate ,  Makoto Aiga

    发明人： Yutaka Hirai ,  Katsuharu Miyate ,  Makoto Aiga

    IPC分类号： B01J21/18 ,  B01J23/40 ,  B01J23/44 ,  B01J31/02 ,  B01J31/30 ,  B01J31/40 ,  C07C125/06

    CPC分类号： B01J31/4038 ,  B01J23/40 ,  B01J31/181 ,  B01J31/2404 ,  B01J31/30 ,  B01J31/4046 ,  B01J31/4053 ,  C07C269/04 ,  B01J21/18 ,  B01J23/44 ,  B01J2531/821 ,  B01J2531/822 ,  B01J2531/824 ,  Y02P20/584

    摘要： An aromatic urethane is obtained at high yield without involving corrosion of a stainless steel reactor by interacting an aromatic nitro compound, an organic compound having at least one hydroxyl group therein and carbon monoxide in the presence of a catalyst composed of (1) palladium, ruthenium, rhodium or compounds thereof, (2) a Lewis acid, and (3) a tertiary amine. For instance, 2,4-dinitrotoluene, ethanol and carbon monoxide placed in a SUS-32 reactor are interacted in the presence of a catalyst composed of (1) 5% palladium on carbon, (2) ferric chloride, and (3) pyridine to obtain 2,4-diethyldicarbamatetoluene without corrosion of the reactor. After completion of the reaction, the catalyst and reaction product are separated from the reaction system; e.g., the insoluble catalyst is first separated and then the reaction solution is cooled down, e.g., to room temperature, to separate the reaction product as crystals, followed by separation of the crystals by filtration. Then, the reaction may be repeated by adding fresh 2,4-dinitrotoluene and ethanol and the separated catalyst to the resultant fitrate under pressurized conditions of a carbon monoxide atmosphere. By repeating the reaction in this manner, 2,4-diethyldicarbamatetoluene with a purity of 98% can be obtained at a yield of 90%.

    摘要翻译： 通过在由（1）钯，钌组成的催化剂存在下，通过使芳香族硝基化合物，其中具有至少一个羟基的有机化合物与一氧化碳相互作用而使不锈钢反应器的腐蚀得到高收率的芳族聚氨酯 ，铑或其化合物，（2）路易斯酸，和（3）叔胺。 例如，放置在SUS-32反应器中的2,4-二硝基甲苯，乙醇和一氧化碳在由（1）5％钯碳，（2）氯化铁和（3）吡啶组成的催化剂存在下相互作用 得到2,4-二乙基氨基甲酸甲酯，没有反应器的腐蚀。 反应完成后，将催化剂和反应产物与反应体系分离; 例如，首先分离不溶性催化剂，然后将反应溶液冷却至例如室温，将反应产物分离成晶体，然后通过过滤分离晶体。 然后，可以通过在一氧化碳气氛的加压条件下，将新鲜的2,4-二硝基甲苯和乙醇加入到合适的配料中，并分离出催化剂，从而重复反应。 通过以这种方式重复反应，可以以90％的收率获得纯度为98％的2,4-二乙基氨基甲酸甲酯。

    Method for forming a deposited film
    53.
    发明授权
    Method for forming a deposited film 失效
    沉积膜形成方法

    公开(公告)号：US5593497A

    公开(公告)日：1997-01-14

    申请号：US415580

    申请日：1995-04-03

    申请人： Jinsho Matsuyama ,  Yutaka Hirai ,  Masao Ueki ,  Akira Sakai

    发明人： Jinsho Matsuyama ,  Yutaka Hirai ,  Masao Ueki ,  Akira Sakai

    IPC分类号： H01L21/205 ,  C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/30 ,  C23C16/452 ,  C30B25/00 ,  C30B25/18 ,  H01L21/20 ,  H01L21/31 ,  H01L21/84 ,  C30B25/02

    CPC分类号： C23C16/04 ,  C23C16/24 ,  C23C16/452 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  F04C2240/603

    摘要： A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).

    摘要翻译： 形成沉积膜的方法包括以下步骤：将用于形成沉积膜的气态原料中的任一种原料（A）和具有氧化作用性质的气态卤化氧化剂引入所述​​起始材料上， 预先设置成膜形成空间，其中具有用于形成沉积膜的具有成为晶体的材料的基板或者能够在其表面上选择性地分散形成晶核的材料预先布置成使所述起始材料（A）吸附在表面上 的所述衬底以形成吸附层（I）和将另一种原料（B）引入所述成膜空间的步骤，从而在所述吸附层（I）上引起表面反应以形成结晶沉积膜 （一世）。

    Thin film transistor utilizing hydrogenated polycrystalline silicon
    60.
    发明授权
    Thin film transistor utilizing hydrogenated polycrystalline silicon 失效
    利用氢化多晶硅的薄膜晶体管

    公开(公告)号：US4814842A

    公开(公告)日：1989-03-21

    申请号：US201259

    申请日：1988-05-25

    申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Satoshi Omata ,  Yoshiyuki Osada ,  Takashi Nakagiri

    发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Satoshi Omata ,  Yoshiyuki Osada ,  Takashi Nakagiri

    IPC分类号： H01L21/205 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L29/78618 ,  H01L29/78 ,  H01L29/78675 ,  H01L29/78684

    摘要： A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

    摘要翻译： 薄膜晶体管包括衬底，包括设置在所述衬底上的含有3原子％以下的氢的多晶硅的半导体层，设置在所述半导体层的表面部分中的源极区域和漏极区域，设置在所述衬底上的绝缘层 所述半导体层位于这两个区域之间的部分，设置在所述绝缘层上的栅电极，与源区形成电接触的源电极和与漏区形成电接触的漏极，所述栅之间的重叠部分 通过栅极电极和源极区域之间的绝缘层以及位于所述栅极电极和漏极区域之下的绝缘层的所述栅极电极之间的电极开始宽度为2000或更小。