公开(公告)号：US20160072085A1

公开(公告)日：2016-03-10

申请号：US14848281

申请日：2015-09-08

申请人： Northwestern University

发明人： Tobin J. Marks ,  Young-geun Ha ,  Antonio Facchetti

IPC分类号： H01L51/05 ,  H01L21/441 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L51/0533 ,  H01L21/441 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L51/0053 ,  H01L51/0055 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0545 ,  H01L2251/301

摘要： Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.

摘要翻译： 公开了可用作电绝缘（或电介质）材料的有机 - 无机混合自组装多层膜。 这些多层通常包括无机底漆层和沉积在其上的一个或多个双层。 每个双层包括发色团或“＆pgr可极化”层和由氧化锆组成的无机覆盖层。 由于双层结构的规则性和由自组装过程产生的发色团的排列取向，所以本发明的多层膜可用于诸如薄膜晶体管的电子器件，以及非线性光学和非易失性存储器中。

公开(公告)号：US20150364687A1

公开(公告)日：2015-12-17

申请号：US14301370

申请日：2014-06-11

申请人： Deepak Shukla ,  Kevin M. Donovan

发明人： Deepak Shukla ,  Kevin M. Donovan

IPC分类号： H01L51/00

CPC分类号： H01L51/0545 ,  C01B17/64 ,  C08F12/30 ,  C08F128/04 ,  C08G18/0828 ,  C08G77/28 ,  C08G77/392 ,  G03F7/0275 ,  H01L51/0053 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0537 ,  H01L2251/5338

摘要： A semiconductor device can be prepared with a gate dielectric layer that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a Tg of at least 50° C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photosensitizer component.

摘要翻译： 半导体器件可以用栅极电介质层制备，该栅极电介质层包括：（1）具有至少50℃的Tg的可光固化或可热固化的含硫代硫酸盐的聚合物的光化学或热交联产物，并且包括：有机 聚合物主链，其包含（a）包含硫代硫酸盐基团的重复单元; 并且还包括电荷平衡阳离子，和（2）任选的电子接受光敏剂组分。

公开(公告)号：US09175123B2

公开(公告)日：2015-11-03

申请号：US13223884

申请日：2011-09-01

申请人： David Christoph Mueller ,  Toby Cull ,  Pawel Miskiewicz ,  Miguel Carrasco-Orozco ,  Andrew Bell ,  Edmund Elce ,  Larry F. Rhodes ,  Kazuyoshi Fujita ,  Hendra Ng ,  Pramod Kandanarachchi ,  Steven Smith

发明人： David Christoph Mueller ,  Toby Cull ,  Pawel Miskiewicz ,  Miguel Carrasco-Orozco ,  Andrew Bell ,  Edmund Elce ,  Larry F. Rhodes ,  Kazuyoshi Fujita ,  Hendra Ng ,  Pramod Kandanarachchi ,  Steven Smith

IPC分类号： B32B27/32 ,  C08F132/08 ,  C08F232/00 ,  H01L51/05

CPC分类号： H01L51/052 ,  C08F32/04 ,  C08F232/00 ,  C08L45/00 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/107

摘要： Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.

摘要翻译： 根据本发明的实施方案提供了聚环烯烃在电子器件中的用途，更具体地说，涉及使用这种聚环烯烃作为用于制造电子器件的栅极绝缘体层，包括这种聚环烯烃栅极绝缘体的电子器件以及用于制备 这种多环烯烃栅极绝缘体层和包含这些层的电子器件。

公开(公告)号：US20140290857A1

公开(公告)日：2014-10-02

申请号：US14306718

申请日：2014-06-17

申请人： TOKYO ELECTRON LIMITED

发明人： Hidenori MIYOSHI ,  Shuji AZUMO

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02271 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02348 ,  H01L21/28026 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/32051 ,  H01L21/445 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76874 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/51 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/0537

摘要： In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.

摘要翻译： 在形成具有形成在具有膜或衬底形状的半导体材料层上的用作栅极绝缘膜的氧化膜的MOS（金属氧化物半导体）结构的层叠衬底的方法中， 以及形成在氧化膜上的作为栅电极的导电膜，通过在暴露了半导体材料层的基板的表面上涂布聚硅烷溶液，形成半导体材料层上的聚硅烷膜。 通过在其上涂覆金属盐溶液，在聚硅烷膜上形成含有金属离子的膜，并将聚硅烷膜和含有金属离子的膜分别改性为聚硅氧烷膜和含有金属微粒的膜以形成层叠的基板。

公开(公告)号：US08835915B2

公开(公告)日：2014-09-16

申请号：US13880914

申请日：2011-11-17

申请人： Robert S. Clough ,  James C. Novack ,  David H. Redinger ,  Guoping Mao ,  Michael E. Griffin

发明人： Robert S. Clough ,  James C. Novack ,  David H. Redinger ,  Guoping Mao ,  Michael E. Griffin

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0537 ,  H01L51/004 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/052

摘要： An assembly includes a dielectric layer in contact with a semiconductor layer. The dielectric layer includes a crosslinked polymeric material having isocyanurate groups, wherein the dielectric layer is free of zirconium oxide particles. The semiconductor layer includes a non-polymeric organic semiconductor material, and is substantially free of electrically insulating polymer. Electronic components and devices including the assembly are also disclosed.

摘要翻译： 组件包括与半导体层接触的电介质层。 介电层包括具有异氰脲酸酯基团的交联聚合物材料，其中介电层不含氧化锆颗粒。 半导体层包括非聚合有机半导体材料，并且基本上不含电绝缘聚合物。 还公开了包括组件的电子部件和装置。

公开(公告)号：US20140021457A1

公开(公告)日：2014-01-23

申请号：US14034949

申请日：2013-09-24

申请人： PANASONIC CORPORATION

发明人： Takaaki UKEDA ,  Akihito MIYAMOTO ,  Norishige NANAI

IPC分类号： H01L51/52 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L51/5203 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/511 ,  H01L29/512 ,  H01L29/66742 ,  H01L29/786 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0525 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/055

摘要： A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.

摘要翻译： 根据本公开的薄膜晶体管包括：在基板上方的栅电极; 覆盖栅电极的栅极绝缘层; 栅极绝缘层上方的半导体层; 以及源极电极和漏电极，其在栅极绝缘层上方电连接到所述半导体层，所述栅极绝缘层包括第一区域和第二区域，所述第一区域在所述栅电极之上，所述第二区域 区域与栅电极上方的区域不同，并且由与第一区域相同的物质制成，并且第一区域具有比第二区域的密度更高的密度。

公开(公告)号：US20130256640A1

公开(公告)日：2013-10-03

申请号：US13880914

申请日：2011-11-17

申请人： Robert S. Clough ,  James C. Novack ,  David H. Redinger ,  Guoping Mao ,  Michael E. Griffin

发明人： Robert S. Clough ,  James C. Novack ,  David H. Redinger ,  Guoping Mao ,  Michael E. Griffin

IPC分类号： H01L51/05

CPC分类号： H01L51/0537 ,  H01L51/004 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/052

摘要： An assembly includes a dielectric layer in contact with a semiconductor layer. The dielectric layer includes a cross-linked polymeric material having isocyanurate groups, wherein the dielectric layer is free of zirconium oxide particles. The semiconductor layer includes a non-polymeric organic semiconductor material, and is substantially free of electrically insulating polymer. Electronic components and devices including the assembly are also disclosed.

摘要翻译： 组件包括与半导体层接触的电介质层。 电介质层包括具有异氰脲酸酯基团的交联聚合物材料，其中介电层不含氧化锆颗粒。 半导体层包括非聚合有机半导体材料，并且基本上不含电绝缘聚合物。 还公开了包括组件的电子部件和装置。

公开(公告)号：US08039294B2

公开(公告)日：2011-10-18

申请号：US11782889

申请日：2007-07-25

申请人： Gi Heon Kim ,  Sung Min Yoon ,  Kyu Ha Baek ,  In Kyu You ,  Seung Youl Kang ,  Seong Deok Ahn ,  Kyung Soo Suh

发明人： Gi Heon Kim ,  Sung Min Yoon ,  Kyu Ha Baek ,  In Kyu You ,  Seung Youl Kang ,  Seong Deok Ahn ,  Kyung Soo Suh

IPC分类号： B05D3/00

CPC分类号： H01L21/02118 ,  C08F120/00 ,  C08F120/10 ,  C08F120/44 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/31691 ,  H01L51/0537

摘要： Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.

摘要翻译： 提供一种绝缘层，其中无机材料被添加到有机聚合物中以提高绝缘性能，使用该绝缘层的有机薄膜晶体管以及制造该有机薄膜晶体管的方法。 提供了包含乙烯基聚合物和无机材料的有机薄膜晶体管的绝缘层。 这里，乙烯基聚合物与无机材料的重量比可以在1：0.0001〜1:0.5的范围内。 因此，可以在低温下制造薄膜，并且还可以制造绝缘层，该绝缘层具有高介电常数，不影响在形成绝缘层期间的以前工艺中形成的其它层。

公开(公告)号：US20110127504A1

公开(公告)日：2011-06-02

申请号：US12935573

申请日：2009-02-25

申请人： Jonathan J. Halls ,  Gregory Lewis Whiting ,  Craig Murphy ,  Kaname Ito

发明人： Jonathan J. Halls ,  Gregory Lewis Whiting ,  Craig Murphy ,  Kaname Ito

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.

摘要翻译： 一种有机薄膜晶体管，包括：基板; 源电极和漏极，设置在衬底上，沟道区域在其之间; 布置在沟道区域中的有机半导体层; 栅电极; 以及设置在所述有机半导体层与所述栅极电极之间的栅极电介质，其中所述栅极电介质包含交联聚合物和含氟聚合物。

公开(公告)号：US07879688B2

公开(公告)日：2011-02-01

申请号：US11771787

申请日：2007-06-29

申请人： James C. Novack ,  Dennis E. Vogel ,  Brian K. Nelson

发明人： James C. Novack ,  Dennis E. Vogel ,  Brian K. Nelson

IPC分类号： H01L21/4763

CPC分类号： H01L51/0537 ,  H01L27/1292 ,  H01L29/78681 ,  H01L51/0005 ,  H01L51/0541 ,  H01L51/0545

摘要： A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles.

摘要翻译： 制造电子器件的方法包括将电介质组合物沉积在衬底上并聚合电介质组合物以形成栅极电介质。 电介质组合物包含可聚合树脂和氧化锆纳米颗粒。