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    Plasma etching apparatus and plasma etching method
    61.
    发明授权
    Plasma etching apparatus and plasma etching method 有权

    公开(公告)号：US11145493B2

    公开(公告)日：2021-10-12

    申请号：US16832227

    申请日：2020-03-27

    Applicant: Tokyo Electron Limited

    Inventor： Satoshi Tanaka

    IPC: H01J37/32 ,  H01J37/16 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/02 ,  H01J37/248

    Abstract: A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

    Noise reduction of a high voltage supply voltage
    62.
    发明授权
    Noise reduction of a high voltage supply voltage 有权

    公开(公告)号：US11101105B1

    公开(公告)日：2021-08-24

    申请号：US16885740

    申请日：2020-05-28

    Applicant: Applied Materials Israel Ltd.

    Inventor： Denys Mets

    IPC: H01J37/28 ,  H01J37/244 ,  G01N23/2251 ,  H01J37/248 ,  H01J37/24

    Abstract: A method, and a high voltage (HV) system that may include a noise reduction unit (MNRU) and a bias setting unit (BSU). The HV system may receive a HV supply signal, over a high voltage supply line from a HV supply unit. The HV supply unit, the MNRU, the BSU and a HV charged particle system may share a ground. At least the MNRU may detect noise in the HV supply signal and send, though the ground, a noise compensation signal. The BSU may receive an indication about a requested value of a bias voltage, and apply the bias voltage to a noise compensated HV signal to provide a biased and noise compensated HV signal to the HV charged particle system.

    PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD
    63.
    发明申请
    PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开

    公开(公告)号：US20200312622A1

    公开(公告)日：2020-10-01

    申请号：US16832227

    申请日：2020-03-27

    Applicant: Tokyo Electron Limited

    Inventor： Satoshi Tanaka

    IPC: H01J37/32 ,  H01J37/16 ,  H01J37/248 ,  H05H1/46 ,  H01L21/02 ,  H01L21/3065

    Abstract: A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

    CREATING ION ENERGY DISTRIBUTION FUNCTIONS (IEDF)
    65.
    发明申请
    CREATING ION ENERGY DISTRIBUTION FUNCTIONS (IEDF) 审中-公开

    公开(公告)号：US20190259562A1

    公开(公告)日：2019-08-22

    申请号：US16405377

    申请日：2019-05-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： LEONID DORF ,  TRAVIS KOH ,  OLIVIER LUERE ,  OLIVIER JOUBERT ,  PHILIP A. KRAUS ,  RAJINDER DHINDSA ,  JAMES ROGERS

    IPC: H01J37/08 ,  H01J37/248

    Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

    Compact, configurable power supply for energizing ozone-producing cells
    68.
    发明授权
    Compact, configurable power supply for energizing ozone-producing cells 有权

    公开(公告)号：US09865426B2

    公开(公告)日：2018-01-09

    申请号：US15056330

    申请日：2016-02-29

    Applicant: MKS Instruments, Inc.

    Inventor： Ken Tran ,  Feng Tian ,  Xing Chen ,  Franklin Lee

    IPC: C01B13/11 ,  H01J37/248

    CPC classification number: H01J37/248 ,  C01B13/115 ,  C01B2201/90

    Abstract: Improvements in the supply of high-frequency electrical power to ozone-producing cells can be accomplished using the systems and techniques described herein. Application of a DC-DC converter operating at a switching frequency substantially greater than a load frequency, supports generation of a high-voltage AC for powering such cells, while allowing for reductions in component size and reductions in a quality factor of a load tuning circuit. Controllable power inverters used in obtaining one or more of the switching and load frequencies can be controlled using feedback techniques to provide stable, high-quality power to ozone-producing cells under variations in one or more of externally supplied power and load conditions. An inrush protection circuit can also be provided to selectively introduce a current-limiting resistance until an input DC bus has been sufficiently initialized as determined by measurements obtained from the DC bus. The current limiting resistance can be a positive-temperature coefficient thermistor.

    HIGH VOLTAGE FEEDTHROUGH ASSEMBLY, TIME-RESOLVED TRANSMISSION ELECTRON MICROSCOPE AND METHOD OF ELECTRODE MANIPULATION IN A VACUUM ENVIRONMENT
    69.
    发明申请
    HIGH VOLTAGE FEEDTHROUGH ASSEMBLY, TIME-RESOLVED TRANSMISSION ELECTRON MICROSCOPE AND METHOD OF ELECTRODE MANIPULATION IN A VACUUM ENVIRONMENT 审中-公开

    公开(公告)号：US20170229276A1

    公开(公告)日：2017-08-10

    申请号：US15503571

    申请日：2015-08-14

    Applicant: Max-Planck-Gesellschaft Zur Foerderung der Wissenschaften e. V.

    Inventor： Julian HIRSCHT

    IPC: H01J37/02 ,  H01J37/248 ,  H01J37/073 ,  H01J37/26

    CPC classification number: H01J37/023 ,  H01J37/065 ,  H01J37/073 ,  H01J37/248 ,  H01J37/26 ,  H01J37/261 ,  H01J37/295 ,  H01J2237/06333 ,  H01J2237/06341 ,  H01J2237/16

    Abstract: A high voltage feedthrough assembly (100) for providing an electric potential in a vacuum environment comprises a flange connector (10) being adapted for a connection with a vacuum vessel (201), wherein the flange connector (10) has an inner side (11) facing to the vacuum vessel (201) and an outer side (12) facing to an environment of the vacuum vessel 201, a vacuumtight insulator tube (20) having a longitudinal extension with a first end (21) facing to the flange connector (10) and a second end (22) being adapted for projecting into the vacuum vessel (201), and an electrode device (30) coupled to the second end (22) of the insulator tube (20), wherein the electrode device (30) has a front electrode (31), including a photocathode or a field emitter tip and facing to the vacuum vessel (201) and a cable adapter (32) for receiving a high-voltage cable (214), wherein a flexible tube connector (40) is provided for a vacuum-tight coupling of the insulator tube (20) with the flange connector (10), and a manipulator device (50) is connected with the insulator tube (20) for adjusting a geometrical arrangement of the insulator tube (20) relative to the flange connector (10). Furthermore, an electron diffraction or imaging apparatus (transmission electron microscope, TEM) 200 for static and/or time-resolved diffraction, including (nano-) crystallography, and real space imaging for structural investigations including the high voltage feedthrough assembly (100) and a method of manipulating an electrode device (30) in a vacuum environment are described.

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