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公开(公告)号：US20180123695A1
公开(公告)日：2018-05-03
申请号：US15800418
申请日：2017-11-01
发明人： Shuichi Kubota , Motoki Saji
IPC分类号： H04B10/50
CPC分类号： H04B10/506 , G02B6/00 , G02B6/4206 , G02B6/4214 , G02B6/4246 , G02B6/43 , G02B27/283 , G02B27/30 , H01S5/0071 , H01S5/0078 , H01S5/02216 , H01S5/02236 , H01S5/02276 , H01S5/02284 , H01S5/0427 , H01S5/06808 , H01S5/0683 , H01S5/4012 , H01S5/4087
摘要： A multi-lane optical apparatus is disclosed. The optical apparatus includes monitor photodiodes (mPD) whose number corresponds to a number of lanes. The mPDs are arranged in an array so as to intersect optical axes of the respective lanes. The mPD has a light-sensitive area and an electrode that are arranged on a diagonal connecting two corners. The light-sensitive area is disposed offset from the center of the mPD. The mPDs in outermost are disposed such that the respective electrodes face inward.
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公开(公告)号：US20180123320A1
公开(公告)日：2018-05-03
申请号：US15797707
申请日：2017-10-30
发明人： Naoki OGAWA
CPC分类号： H01S5/34313 , H01S5/0206 , H01S5/026 , H01S5/1231 , H01S5/2226 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/34366
摘要： A semiconductor laser diode (LD) having an optical grating is disclosed. The LD includes a lower cladding layer that buries the optical grating, an active layer, and an upper cladding layer. The active layer has the multi-quantum well (MQW) structure of barrier layers and well layers alternately arranged to each other. The MQW structure further includes intermediate layers between the barrier layers and the well layers, and have lattice constant between that of the barrier layer and that of the well layer. The inter mediate layer has a thickness thinner than 1 nm.
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73.发明申请公开(公告)号：US20170346570A1
公开(公告)日：2017-11-30
申请号：US15604048
申请日：2017-05-24
发明人： Ryouta Teranishi
IPC分类号： H04B10/50 , H04B10/516
CPC分类号： H04B10/505 , H04B10/504 , H04B10/5161 , H04B10/541 , H04B10/58
摘要： An optical transmitter that outputs an optical signal with a pulse amplitude modulation (PAM) configuration is disclosed. The optical transmitter includes a light-generating device and a driver. The light-generating device has non-linearity in a transfer characteristic between the electrical driving signal and the optical signal. The driver includes a PAM signal generator, a level controller, and an output driver. The PAM signal generator receives the input electrical signal and outputs a PAM signal. The level controller adjusts the electrical levels of the PAM signal based on the non-linear transfer characteristic of the light-generating device, where the electrical levels set the optical levels of the optical signal with preset ratios. The output driver generates the driving signal by superposing the electrical levels adjusted by the level controller with the PAM signal provided from the PAM signal generator.
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公开(公告)号：US09818838B2
公开(公告)日：2017-11-14
申请号：US15180851
申请日：2016-06-13
发明人： Tsutomu Komatani
IPC分类号： H01L29/66 , H01L21/02 , H01L21/3105 , H01L21/3115 , H01L29/778 , H01L29/20 , H01L21/24 , H01L29/04 , H01L29/16 , H01L21/285
CPC分类号： H01L29/66462 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/02326 , H01L21/02329 , H01L21/0234 , H01L21/02359 , H01L21/02378 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/246 , H01L21/28587 , H01L21/3105 , H01L21/31155 , H01L29/045 , H01L29/1608 , H01L29/2003 , H01L29/7787
摘要： A method for fabricating a semiconductor device includes: forming a silicon nitride film having a refractive index equal to or larger than 2.2 on a nitride semiconductor layer; and introducing at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium into the silicon nitride film, the silicon nitride film including the at least one of elements remaining on the nitride semiconductor layer. The at least one of elements is introduced by a process of exposing the silicon nitride film to plasma including the at least one of elements, a process of ion-implanting the at least one of elements into the silicon nitride film, or a process of thermally diffusing the at least one of elements into the silicon nitride film. The silicon nitride film is formed in contact with a surface of the nitride semiconductor layer.
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公开(公告)号：US20170256605A1
公开(公告)日：2017-09-07
申请号：US15599743
申请日：2017-05-19
发明人： Yasunori Nonaka
IPC分类号： H01L49/02 , H01L23/532 , H01L23/522
CPC分类号： H01L28/65 , H01L23/5223 , H01L23/53252 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating an electronic device is provided, and the method comprises the steps of: forming a lower electrode on a substrate; forming a dielectric film on the lower electrode; forming an upper electrode on the dielectric film, the upper electrode including gold (Au); forming a refractory metal layer on at least one of upper or lower surface of the upper electrode, the refractory metal layer having a melting temperature higher than a melting temperature of the upper electrode; forming an insulating film to cover the lower electrode, the dielectric film, the upper electrode, and the refractory metal layer; and dry-etching the insulating film to form an opening therein, the upper electrode or the refractory metal layer being exposed at the opening.
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公开(公告)号：US09742149B2
公开(公告)日：2017-08-22
申请号：US14473748
申请日：2014-08-29
IPC分类号： H01S3/10 , H01S5/0687 , H01S5/0625 , H01S5/026 , H01S5/06 , H01S5/12
CPC分类号： H01S5/0687 , H01S5/0265 , H01S5/0617 , H01S5/06256 , H01S5/06258 , H01S5/1209 , H01S5/1212
摘要： In the method for controlling a tunable wavelength laser, information designating an oscillation wavelength is inputted. A driving condition for causing laser oscillation at a first wavelength is acquired from a memory. A control value of wavelength characteristics of the etalon and a difference between the first wavelength and a second wavelength are referred to, and a control value of wavelength characteristics of the etalon for causing laser oscillation at the second wavelength is calculated. The control value of wavelength characteristics of the etalon are assigned to the tunable wavelength laser, and a wavelength is controlled so that a wavelength sensing result becomes a first target value. Information indicating a wavelength shift amount from the designated oscillation wavelength is inputted. The wavelength sensing result is calculated as a second target value. The wavelength is controlled so that the wavelength sensing result becomes the second target value.
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77.发明授权公开(公告)号：US09634463B2
公开(公告)日：2017-04-25
申请号：US14794387
申请日：2015-07-08
发明人： Yasuyuki Yamauchi
CPC分类号： H01S5/02284 , G02B6/32 , G02B6/36 , G02B6/4206 , G02B6/4208 , G02B6/421 , G02B6/4225 , G02B6/4237 , G02B6/4238 , G02B6/4244 , G02B6/4262 , G02B6/4278 , H01S5/02216 , H01S5/02248 , H01S5/02438 , H01S5/3434 , H01S5/50
摘要： An optical module providing a semiconductor optical amplifier (SOA), and a process to assembly the optical module are disclosed. The optical module provides front and rear coupling units each optically coupled with the SOA and fixed to the housing enclosing the SOA. The housing has a slim wall fixing a lens holder soldered to the slim wall. The front and/or rear coupling unit is fixed to the lens holder by YAG laser welding after the active alignment by using a spontaneous emission of the SOA, and amplified emission of externally provided test beam.
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公开(公告)号：US09627222B2
公开(公告)日：2017-04-18
申请号：US14989249
申请日：2016-01-06
发明人： Takeshi Araya , Tsutomu Komatani
IPC分类号： H01L21/338 , H01L21/322 , H01L29/20 , H01L29/66 , H01L29/778 , H01L21/324
CPC分类号： H01L21/3228 , H01L21/3221 , H01L21/3245 , H01L29/2003 , H01L29/66462 , H01L29/66522 , H01L29/7787
摘要： A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer.
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公开(公告)号：US09620409B2
公开(公告)日：2017-04-11
申请号：US14673039
申请日：2015-03-30
发明人： Ken Kikuchi
IPC分类号： H01L29/423 , H01L29/778 , H01L21/765 , H01L29/40 , H01L29/08 , H01L29/20
CPC分类号： H01L21/765 , H01L29/0843 , H01L29/2003 , H01L29/401 , H01L29/402 , H01L29/404 , H01L29/42316 , H01L29/778 , H01L29/7787
摘要： A method of manufacturing a semiconductor device includes processes of forming a gate electrode, a source electrode, and a drain electrode on a nitride semiconductor layer, forming an insulating film including, on a surface thereof, a step that covers the gate electrode and reflects a shape of the gate electrode, and a flat portion, forming a mask on the insulating film, forming an opening in the mask, the opening including a shape in which a side surface of the step is located on an inner side of the opening and an upper surface end portion of the gate electrode is located on an outer side of the opening, and having an overhang shape extending in a depth direction, and forming a field plate extending from a side surface of the step to the flat portion using the mask.
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公开(公告)号：US09578770B2
公开(公告)日：2017-02-21
申请号：US14670973
申请日：2015-03-27
发明人： Akitada Kodama
IPC分类号： H05K7/02 , H05K5/06 , H05K5/00 , H01L23/10 , H01L23/047
CPC分类号： H05K5/069 , H01L23/047 , H01L23/10 , H01L2924/0002 , H05K5/0095 , H01L2924/00
摘要： A package for an electronic device is disclosed. The package includes a metal base, an insulating casing mounted on the metal base and having a seating metal on the top thereof, and a lid tightly enclosing a space surrounded by the base and the casing. The lid provides a sealing metal facing the sealing metal on the top of the casing with putting a brazing metal therebetween. The sealing metal of the lid has an area wider than an area of the sealing metal of the casing.
摘要翻译： 公开了一种用于电子设备的包装。 该包装包括金属基座，安装在金属基座上的绝缘壳体，其顶部具有座位金属，以及紧密包围由基座和外壳包围的空间的盖子。 盖子通过在其之间放置钎焊金属而在壳体顶部提供面向密封金属的密封金属。 盖的密封金属的面积比壳体的密封金属的面积宽。
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