TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM
    71.
    发明申请
    TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM 有权
    用于控制充电颗粒光束的技术

    公开(公告)号:US20090085504A1

    公开(公告)日:2009-04-02

    申请号:US11865336

    申请日:2007-10-01

    Abstract: Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance.

    Abstract translation: 公开了用于控制带电粒子束的技术。 在一个特定的示例性实施例中,这些技术可以被实现为带电粒子加速/减速系统。 带电粒子加速/减速系统可以包括加速器柱,其可以包括多个电极。 多个电极可以具有带电粒子束可以通过的孔。 带电粒子加速/减速系统还可以包括电压分级系统。 电压分级系统可以包括第一流体储存器和第一流体回路。 第一流体回路可以具有连接到多个电极中的至少一个的导电连接器。 电压分级系统还可以包括第一流体回路中的流体。 流体可能具有电阻。

    Method and system for microwave excitation of plasma in an ion beam guide
    72.
    发明授权
    Method and system for microwave excitation of plasma in an ion beam guide 有权
    离子束引导中等离子体微波激发的方法和系统

    公开(公告)号:US06414329B1

    公开(公告)日:2002-07-02

    申请号:US09625153

    申请日:2000-07-25

    CPC classification number: H01J37/32623 H01J37/05 H01J37/3171 H01J37/32678

    Abstract: An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.

    Abstract translation: 公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。 该装置包括安装在沿着离子束的路径的通道中的质量分析磁体,适于在通道中提供电场的电源以及适于在通道中提供多通道磁场的磁性装置,其中 可以包括沿通道的至少一部分安装的多个磁体。 电源和磁体可以协同地相互作用以沿着通道的至少一部分提供电子回旋共振(ECR)状态。 多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上,以与给定的低能离子束的已知RF或微波频率的电场相互作用。 本发明还包括质量分析器波导,其适于沿着质量分析器通道的长度一致地将电场耦合到束等离子体,从而改善ECR条件的产生。 因此,本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强,而不引入外部产生的等离子体。 本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。

    Seam welder
    73.
    发明授权
    Seam welder 有权
    接缝焊工

    公开(公告)号:US06213184B1

    公开(公告)日:2001-04-10

    申请号:US09241970

    申请日:1999-02-01

    Applicant: Frank Sinclair

    Inventor: Frank Sinclair

    Abstract: A hot wedge, automatic seam welder is disclosed. The welder is comprised of a chassis having a base plate, a motor housing and a support arm extending from the motor housing. An S-shaped guide for guiding opposing sheets of material is between the base plate and the motor housing. Disposed downstream from the motor housing, depending from the support arm, is vertically-movable suspension for a driven upper pressure roller which is occludable with a driven lower pressure roller on the base plate. Also depending from the support arm is vertically-movable and adjustable suspension for the hot wedge. A horn-shaped shroud for guiding material over and under the wedge, and for shrouding the wedge when in its disengaged mode, is disposed upstream from the wedge. Guides for performing lap welds, fin welds and hem welds, as well as many variations thereupon, are also disclosed.

    Abstract translation: 公开了一种热楔,自动缝焊机。 焊机由具有基板,马达壳体和从马达壳体延伸的支撑臂的底盘组成。 用于引导相对的材料片材的S形引导件位于基板和马达壳体之间。 从支撑臂悬挂的电动机壳体的下游设置有用于被驱动的上压辊的可垂直移动的悬架,该驱动上压辊可与基板上的从动下压辊闭塞。 也可以从支撑臂垂直移动和可调节悬挂的热楔。 用于在楔形物之上和之下引导材料的角形护罩,以及当处于其脱离模式时用于遮蔽楔形物的楔形护罩设置在楔形物的上游。 还公开了用于执行搭接焊接,翅片焊接和折边焊接的指导,以及其上的许多变化。

    Apparatus for capturing and removing contaminant particles from an
interior region of an ion implanter
    74.
    发明授权
    Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter 失效
    用于从离子注入机的内部区域捕获和去除污染物颗粒的装置

    公开(公告)号:US5656092A

    公开(公告)日:1997-08-12

    申请号:US574242

    申请日:1995-12-18

    CPC classification number: H01J37/3002 H01J37/3171 H01J2237/022

    Abstract: A method of capturing and removing contaminant particles moving within an evacuated interior region of an ion beam implanter is disclosed. The steps of the method include: providing a particle collector having a surface to which contaminant particles readily adhere; securing the particle collector to the implanter such that particle adhering surface is in fluid communication to the contaminant particles moving within the interior region; and removing the particle collector from the implanter after a predetermined period of time. An ion implanter in combination with a particle collector for trapping and removing contaminant particles moving in an evacuated interior region of the implanter traversed by an ion beam is also disclosed, the particle collector including a surface to which the contaminant particles readily adhere and securement means for releasably securing the particle collector to the implanter such that the particle adhering surface is in fluid communication with the evacuated interior region of the implanter.

    Abstract translation: 公开了一种捕获和去除在离子束注入机的抽空的内部区域内移动的污染物颗粒的方法。 该方法的步骤包括:提供具有易于粘附污染物颗粒的表面的颗粒收集器; 将颗粒收集器固定到注入机,使得颗粒粘附表面与在内部区域内移动的污染物颗粒流体连通; 并且在预定时间段之后从所述注入机移除所述颗粒收集器。 还公开了一种与用于捕获和去除在离子束穿过的注入器的抽空的内部区域中移动的污染物颗粒的离子注入机,该颗粒收集器包括污染物颗粒易于粘附的表面和固定装置 将颗粒收集器可释放地固定到注入机,使得颗粒粘附表面与注入机的抽空的内部区域流体连通。

    Ion implantation device
    75.
    发明授权
    Ion implantation device 失效
    离子注入装置

    公开(公告)号:US5525807A

    公开(公告)日:1996-06-11

    申请号:US465420

    申请日:1995-06-05

    Abstract: An ion implantation device equipped with a high-speed driving device which causes rotation of the a disk that supports semiconductor wafers around it outer periphery. A center position of the disk is the axis of the rotation of the high speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device further has a control circuit which calculates the movement speed of the aforementioned low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position, and controls said low speed scan speed so that ions are uniformly implanted into the aforementioned wafers.

    Abstract translation: 一种配备有高速驱动装置的离子注入装置,其使围绕其外周的半导体晶片支撑的盘的旋转。 盘的中心位置是高速旋转的旋转轴。 低速驱动装置导致盘在径向上的相对运动。 离子注入装置还具有控制电路,该控制电路基于围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算上述低速驱动装置的移动速度,并且控制 所述低速扫描速度使得离子均匀地注入到上述晶片中。

    Wastewater treatment system and method
    76.
    发明授权
    Wastewater treatment system and method 失效
    污水处理系统及方法

    公开(公告)号:US5156741A

    公开(公告)日:1992-10-20

    申请号:US636062

    申请日:1990-12-28

    Abstract: A biological treatment system and method is provided for treating wastewater from a treatment plant which provides primary and secondary treatment. An aggregate-filled bed enclosed by a water-impervious barrier is used to receive and cleanse the wastewater using the roots of turf grass grown on the top of the bed. Wastewater is introduced near the bottom of the bed and flows generally upwardly through the voids in the media, passing through the root system of the turf grass. Wastewater is withdrawn from the bed at a higher level than it is introduced. The top surface of the bed remains dry and is capable of supporting pedestrian and vehicular traffic. A recirculation system maintains the generally upward flow of water through the bed. Transpiration reduces the volume of the wastewater and the biological cleansing action of the roots cleanses the wastewater. Alternative forms of the bed are described.

    Abstract translation: 提供了一种生物处理系统和方法,用于处理提供初级和次级处理的处理厂的废水。 由不透水屏障包围的聚集体填充床用于使用在床顶部生长的草坪草的根部接收和清洁废水。 废水在床底附近引入,通常通过介质中的空隙向上流动,通过草皮草的根系。 废水从床上撤出的水平高于引进的水平。 床的顶面保持干燥,能够支持行人和车辆交通。 再循环系统保持大体向上的水流通过床。 蒸腾作用减少了废水的体积,并且根部的生物清洁作用清洗了废水。 描述床的替代形式。

    Platen control
    77.
    发明授权
    Platen control 有权
    压板控制

    公开(公告)号:US09012337B2

    公开(公告)日:2015-04-21

    申请号:US13270644

    申请日:2011-10-11

    CPC classification number: H01L21/67109 H01L21/67288

    Abstract: A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.

    Abstract translation: 公开了一种用于保持期望的压板平整度的系统和方法。 激光系统用于测量压板的平整度。 然后改变压板的温度以达到所需的平坦度水平。 在一些实施例中,该激光系统仅在建立周期期间使用,然后在正常操作期间使用所得到的期望温度。 在其他实施例中,即使在正在处理工件时,也使用激光系统来测量压板的平坦度。

    Excited gas injection for ion implant control
    79.
    发明授权
    Excited gas injection for ion implant control 有权
    激发气体注入用于离子注入控制

    公开(公告)号:US08501624B2

    公开(公告)日:2013-08-06

    申请号:US12328096

    申请日:2008-12-04

    Abstract: An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.

    Abstract translation: 公开了一种利用离子源和/或原子气体注入的离子源。 在离子束施加中,源气体可以直接使用,如通常提供的。 或者或另外,源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。 这可以用于产生兴奋的中性粒子,重离子,亚稳分子或多电荷离子。 在另一个实施例中,使用多个气体,其中一个或多个气体通过远程等离子体发生器。 在某些实施方案中,气体在被提供给离子源室之前组合在单个等离子体发生器中。 在等离子体浸渍应用中,通过一个或多个另外的气体注入位置将等离子体注入到处理室中。 这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

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