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    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
    72.
    发明申请
    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY 审中-公开

    公开(公告)号：US20160211410A1

    公开(公告)日：2016-07-21

    申请号：US15081134

    申请日：2016-03-25

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A. Kim ,  Won Young Roh ,  Min Woo Kang

    IPC: H01L33/08 ,  H01L33/38 ,  H01L33/62

    CPC classification number: H01L27/153 ,  H01L27/156 ,  H01L33/20 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62

    Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.

    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
    73.
    发明申请
    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME 有权
    发光二极管，其制造方法和具有该发光二极管的LED模块

    公开(公告)号：US20160111600A1

    公开(公告)日：2016-04-21

    申请号：US14985162

    申请日：2015-12-30

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Se Hee Oh ,  Hyun A. Kim

    IPC: H01L33/38 ,  H01L33/24 ,  H01L33/40

    CPC classification number: H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/16225

    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

    Abstract translation: 提供发光二极管以包括第一导电型半导体层; 包括设置在第一导电型半导体层上的第二导电型半导体层和介于第一和第二导电型半导体层之间的有源层的台面; 以及设置在所述台面上的第一电极，其中所述第一导电型半导体层包括沿所述第一导电型半导体层的外周设置在所述台面周围的第一接触区域; 以及至少部分地被所述台面包围的第二接触区域，所述第一电极电连接到所述第一接触区域的至少一部分和所述第二接触区域的至少一部分，以及所述第一接触区域的所述第一接触区域之间的相邻区域的线宽 接触区域和第一电极大于第二接触区域和第一电极之间的邻接区域的线宽。

    LIGHT EMITTING DEVICE
    74.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150372208A1

    公开(公告)日：2015-12-24

    申请号：US14748149

    申请日：2015-06-23

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Chang Yeon Kim ,  Sung Su Son ,  Dae Woong Suh

    IPC: H01L33/62 ,  H01L33/50

    CPC classification number: H01L33/62 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73104 ,  H01L2924/00014

    Abstract: Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.

    Abstract translation: 本文公开了通过在晶片级分离生长衬底而制造的发光器件。 发光装置包括：基座; 发光结构，设置在所述基底上; 以及多个第二接触电极，其设置在所述基底和所述发光结构之间，其中所述基底包括电连接到所述发光结构的至少两个体电极和设置在所述体电极之间并包围所述体电极的绝缘支撑件，所述绝缘体 支撑体和各体积电极，每个包括彼此面对的表面彼此接合的凹部和凸部，并且凸部包括其突起方向上的宽度变化的部分。

    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    75.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号：US20150364653A1

    公开(公告)日：2015-12-17

    申请号：US14734835

    申请日：2015-06-09

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae

    IPC: H01L33/40 ,  H01L33/54 ,  H01L33/46 ,  H01L33/56 ,  H01L33/38 ,  H01L33/42

    CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

    Abstract: Exemplary embodiments provide a light emitting diode that includes: at least one lower electrode providing a passage for electric current; a light emitting structure placed over the at least one lower electrode to be electrically connected to the lower electrode, the light emitting structure is disposed to form at least one via-hole; a reflective electrode layer placed between the at least one lower electrode and the light emitting structure; and an electrode pattern formed around the light emitting structure and electrically connecting the lower electrode to the light emitting structure through the via-hole.

    Abstract translation: 示例性实施例提供一种发光二极管，其包括：提供电流通道的至少一个下电极; 发光结构，放置在所述至少一个下电极上以电连接到所述下电极，所述发光结构被设置为形成至少一个通孔; 放置在所述至少一个下电极和所述发光结构之间的反射电极层; 以及形成在发光结构周围的电极图案，并且通过通孔将下电极与发光结构电连接。

    LIGHT-EMITTING DIODE AND APPLICATION THEREFOR
    77.
    发明申请
    LIGHT-EMITTING DIODE AND APPLICATION THEREFOR 有权
    发光二极管及其应用

    公开(公告)号：US20150287762A1

    公开(公告)日：2015-10-08

    申请号：US14745271

    申请日：2015-06-19

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Daewoong Suh

    IPC: H01L27/15 ,  H01L33/14 ,  H01L33/40 ,  H01L33/44 ,  H01L33/24

    CPC classification number: H01L27/153 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/00

    Abstract: A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.

    Abstract translation: 提供了一种发光二极管，其包括：具有第一表面，第二表面和侧表面的透明基板; 位于透明基板的第一表面上的第一导电半导体层; 位于所述第一导电半导体层上的第二导电半导体层; 位于所述第一导电半导体层和所述第二导电半导体层之间的有源层; 电连接到第一导电半导体层的第一焊盘; 以及电连接到所述第二导电半导体层的第二焊盘，其中所述透明基板被配置为通过所述透明基板的所述第二表面放电由所述有源层产生的光，并且所述发光二极管的光束角为至少140 度以上。 因此，可以提供适用于背光单元或表面照明装置的发光二极管。

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