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91 条记录 (耗时 0.036 秒)

    Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium
    75.
    发明授权
    Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium 有权
    半导体器件，半导体器件，半导体制造设备和存储介质的制造方法

    公开(公告)号：US08378464B2

    公开(公告)日：2013-02-19

    申请号：US12683073

    申请日：2010-01-06

    申请人： Yoshihiro Kato ,  Yusaku Kashiwagi ,  Takashi Matsumoto

    发明人： Yoshihiro Kato ,  Yusaku Kashiwagi ,  Takashi Matsumoto

    IPC分类号： H01L21/312 ,  H01L29/06

    CPC分类号： H01L23/5329 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76822 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method for manufacturing a semiconductor device includes steps of: (a) forming a thin film containing a phenyl group and silicon on a substrate while obtaining a plasma by activating an organic silane gas containing a phenyl group and silicon and nitrogen as not original component but unavoidable impurity and exposing the substrate to the plasma, temperature of the substrate being set at 200° C. or lower; and (b) obtaining a low-permittivity film by supplying energy to the substrate to allow moisture to be released from the thin film. With this method for manufacturing the semiconductor device, it is possible to obtain a silicon-oxide based low-permittivity film containing an organic substance which is not significantly damaged by the release of the organic substance when subjected to a plasma treatment such as an etching treatment, an ashing treatment, and/or the like.

    摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（a）在基板上形成含有苯基和硅的薄膜，同时通过活化含有苯基的有机硅烷气体和硅和氮作为原始成分而获得等离子体，但是 不可避免的杂质，将基板暴露于等离子体，将基板的温度设定在200℃以下; 和（b）通过向衬底提供能量以便从薄膜中释放水分来获得低介电常数膜。 利用这种制造半导体器件的方法，可以获得含有有机物质的氧化硅类低介电常数膜，当通过蚀刻处理进行等离子体处理时，有机物质不被有机物释放而显着损坏 ，灰化处理和/或类似物。

    Electromagnetic wave suppression sheet, device, and electronic apparatus
    76.
    发明授权
    Electromagnetic wave suppression sheet, device, and electronic apparatus 失效
    电磁波抑制片，器件和电子设备

    公开(公告)号：US08377340B2

    公开(公告)日：2013-02-19

    申请号：US12630971

    申请日：2009-12-04

    申请人： Yoshihiro Kato ,  Yoshito Ikeda

    发明人： Yoshihiro Kato ,  Yoshito Ikeda

    IPC分类号： H01B1/22 ,  G21F1/08

    CPC分类号： H05K9/0083

    摘要： Disclosed is an electromagnetic wave suppression sheet obtained by mixing metallic magnetic particles into a resin and formed into a sheet shape. In the electromagnetic wave suppression sheet, a coercive force is 320 [A/m] or more and a saturation magnetization is 0.35 [Wb/m2] or more at a time when an external magnetic field of 1 kOe in an in-plane direction is applied.

    摘要翻译： 公开了一种通过将金属磁性颗粒混合成树脂并形成为片状而获得的电磁波抑制片。 在电磁波抑制片中，当在面内方向上的1kOe的外部磁场为（E）的情况下，矫顽力为320 [A / m]以上，饱和磁化强度为0.35 [Wb / m 2] 应用。

    High frequency coupler and communication device
    77.
    发明授权
    High frequency coupler and communication device 有权
    高频耦合器和通讯装置

    公开(公告)号：US08299868B2

    公开(公告)日：2012-10-30

    申请号：US12787669

    申请日：2010-05-26

    申请人： Yoshihiro Kato ,  Kenzoh Nishikawa ,  Takanori Washiro ,  Satoshi Konya

    发明人： Yoshihiro Kato ,  Kenzoh Nishikawa ,  Takanori Washiro ,  Satoshi Konya

    IPC分类号： H01P5/02 ,  H04B5/00

    CPC分类号： H01P5/00

    摘要： A high frequency coupler includes a ground, a first coupling electrode connected via a first resonator unit to an input and output terminal of a communication circuit, and one or more second coupling electrodes connected via a second resonator unit designed utilizing a ground to a ground terminal of the communication circuit.

    摘要翻译： 高频耦合器包括接地，通过第一谐振器单元连接到通信电路的输入和输出端的第一耦合电极和经由接地端设计的第二谐振单元连接到接地端子的一个或多个第二耦合电极 的通信电路。

    Plasma process system and plasma process method
    79.
    发明授权
    Plasma process system and plasma process method 失效
    等离子体工艺系统和等离子体处理方法

    公开(公告)号：US07481886B2

    公开(公告)日：2009-01-27

    申请号：US10623866

    申请日：2003-07-22

    申请人： Yoshihiro Kato ,  Tadashi Goto ,  Hikaru Yoshitaka ,  Makoto Aoki

    发明人： Yoshihiro Kato ,  Tadashi Goto ,  Hikaru Yoshitaka ,  Makoto Aoki

    IPC分类号： C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01J37/3244

    摘要： A first channel is formed in the side of a first diffusion plate which is on that side of a gas inlet tube and a recess is formed in the side which is on that side of an electrode plate. The first channel and the recess communicate with each other through a plurality of inlet ports. The first channel and the inlet ports form a gas flow passage L which leads to the recess from the gas inlet tube. As a process gas supplied from the gas inlet tube passes through the gas flow passage L, it is supplied, dispersed, to a hollow portion formed between the recess and the electrode plate.

    摘要翻译： 第一通道形成在第一扩散板的位于气体入口管的该侧的侧面上，并且在电极板的该侧上形成凹部。 第一通道和凹槽通过多个入口端口彼此连通。 第一通道和入口端口形成气体通道L，其从气体入口管通向凹部。 当从气体导入管供给的工艺气体通过气体流路L时，被供给到分散在凹部和电极板之间的中空部分。