公开(公告)号：US20180087153A1

公开(公告)日：2018-03-29

申请号：US15706309

申请日：2017-09-15

Applicant: NGK SPARK PLUG CO., LTD.

Inventor： Jun KURANO ,  Kazutaka TANAKA

IPC: C23C16/458 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H01L21/67

CPC classification number: C23C16/4586 ,  C23C14/541 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32532 ,  H01J37/32724 ,  H01L21/67103 ,  H01L21/68792

Abstract: A heating device includes a holding member having a resistive heating element, a columnar support member joined to the holding member, power receiving electrodes connected to the resistive heating element, and an electrode terminal unit disposed in each of through holes in the columnar support member. Each of the electrode terminal units includes a first columnar member having one end portion connected to the power receiving electrode and the other end portion connected to a metal stranded wire, and a second columnar member having an end portion connected to the metal stranded wire. A columnar member assembly having a portion of the first columnar member and a portion of the second columnar member includes a general portion and a large-diameter portion. The distance between the large-diameter portion and an inner peripheral surface of the through hole is smaller than the distance between the general portion and the inner peripheral surface.

公开(公告)号：US20180068833A1

公开(公告)日：2018-03-08

申请号：US15703213

申请日：2017-09-13

Applicant: LAM RESEARCH CORPORATION

Inventor： Hu Kang ,  Adrien LaVoie ,  Shankar Swaminathan ,  Jun Qian ,  Chloe Baldasseroni ,  Frank Pasquale ,  Andrew Duvall ,  Ted Minshall ,  Jennifer Petraglia ,  Karl Leeser ,  David Smith ,  Sesha Varadarajan ,  Edward Augustyniak ,  Douglas Keil

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40 ,  C23C16/505

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.

公开(公告)号：US09884766B2

公开(公告)日：2018-02-06

申请号：US14539553

申请日：2014-11-12

Applicant: PERPETUUS RESEARCH & DEVELOPMENT LIMITED

Inventor： John Buckland ,  Dylan Walters

IPC: H01H1/46 ,  B05D7/00 ,  C01B31/04 ,  C23C16/509 ,  C23C16/517 ,  B01J19/08 ,  B01J19/12 ,  B08B6/00 ,  C08K9/00 ,  C23C16/26 ,  C23C16/44 ,  C23C16/511 ,  C23C16/513 ,  H01J37/02 ,  H01J37/32 ,  C09C1/46 ,  H05H1/46 ,  C01B32/168 ,  C01B32/19 ,  C01B32/194

CPC classification number: C01B32/168 ,  B01J19/087 ,  B01J19/126 ,  B01J2219/0809 ,  B01J2219/0818 ,  B01J2219/0824 ,  B01J2219/0879 ,  B01J2219/0894 ,  B01J2219/1206 ,  B08B6/00 ,  C01B32/19 ,  C01B32/194 ,  C01P2004/03 ,  C08K9/00 ,  C09C1/46 ,  C23C16/26 ,  C23C16/4417 ,  C23C16/509 ,  C23C16/511 ,  C23C16/513 ,  C23C16/517 ,  H01J37/023 ,  H01J37/32018 ,  H01J37/32192 ,  H01J37/32568 ,  H05H1/46 ,  H05H2001/4697

Abstract: A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalizing, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.

公开(公告)号：US09850576B2

公开(公告)日：2017-12-26

申请号：US12982843

申请日：2010-12-30

Applicant: Jonghoon Baek ,  Edwin C. Suarez ,  Tsutomu Tanaka ,  Edward P. Hammond, IV ,  Jeonghoon Oh

Inventor： Jonghoon Baek ,  Edwin C. Suarez ,  Tsutomu Tanaka ,  Edward P. Hammond, IV ,  Jeonghoon Oh

IPC: C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  H01J37/32 ,  C23C16/509

CPC classification number: C23C16/45565 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32431 ,  H01J37/3244

Abstract: Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.

公开(公告)号：US20170338085A1

公开(公告)日：2017-11-23

申请号：US15660354

申请日：2017-07-26

Applicant: Lam Research Corporation

Inventor： Yukinori Sakiyama ,  Yaswanth Rangineni ,  Jeremy Tucker ,  Douglas Keil ,  Edward Augustyniak ,  Sunil Kapoor

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/50 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67 ,  C23C16/455

CPC classification number: H01J37/32935 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32183 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67253

Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity. The characteristics of the RF current measured by the coil sensor are used to confirm presence of plasma within the wafer cavity.

公开(公告)号：US09822449B2

公开(公告)日：2017-11-21

申请号：US15249442

申请日：2016-08-28

Applicant: Applied Materials, Inc.

Inventor： Robin L. Tiner ,  Allen K. Lau

IPC: B05B1/14 ,  C23C16/455 ,  B05B15/06 ,  C23C16/509 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32807

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber includes a rectangular body having four sides, a first major surface and a second major surface opposite the first major surface, and a plurality of gas passages formed through the body in a longitudinal direction between the first and second major surfaces, a center support member coupled to the body in a center region thereof, and a mid-support member coupled to the body between the center region and the side.

公开(公告)号：US09818572B2

公开(公告)日：2017-11-14

申请号：US14020669

申请日：2013-09-06

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： Ho Chul Kang

IPC: H01J37/04 ,  C23C16/509 ,  H01J37/32

CPC classification number: H01J37/04 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32577

Abstract: A substrate treatment apparatus includes a chamber providing a reaction region and including first and second sides facing each other, a module connected to the first side, an upper electrode in the reaction region, a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side, and a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point.

公开(公告)号：US09598771B2

公开(公告)日：2017-03-21

申请号：US13221336

申请日：2011-08-30

Applicant: Ji-Feng Liu

Inventor： Ji-Feng Liu

IPC: C23C14/14 ,  C23C16/509 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  H01J37/32

CPC classification number: C23C16/5096 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4401 ,  H01J37/32091 ,  H01J37/32183

Abstract: The present disclosure provides for methods of depositing a dielectric layer within a reaction chamber including a first electrode configured to support a substrate and a second electrode disposed above the first electrode and the substrate. A method includes flowing at least one reactant gas and at least one dilution gas into the reaction chamber, applying a first maximum low frequency radio frequency (LFRF) reflective power between the first and second electrodes to deposit a dielectric layer on the substrate, and applying a second maximum LFRF reflective power between the first and second electrodes during a termination operation, wherein the second maximum LFRF reflective power is less than the first maximum LFRF reflective power.

公开(公告)号：US09593419B2

公开(公告)日：2017-03-14

申请号：US14632648

申请日：2015-02-26

Applicant: Applied Materials, Inc.

Inventor： Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Ramprakash Sankarakrishnan ,  Robert Kim ,  Dale R. Du Bois ,  Kirby Hane Floyd ,  Amit Kumar Bansal ,  Tuan Anh Nguyen

IPC: H01L21/02 ,  H01L21/687 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J2237/3321 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.

Abstract translation: 提供了一种用于处理衬底的方法和设备。 该装置包括基座和旋转构件，两者都可移动地设置在处理室内。 旋转构件适于旋转设置在腔室中的衬底。 衬底可以在加工过程中被边缘环支撑。 边缘环可以选择性地接合基座或旋转构件。 在一个实施例中，边缘环在沉积工艺期间接合基座，并且边缘环在基底旋转期间接合旋转构件。 处理过程中衬底的旋转可以是离散的或连续的。

公开(公告)号：US09528185B2

公开(公告)日：2016-12-27

申请号：US14489398

申请日：2014-09-17

Applicant: Applied Materials, Inc.

Inventor： Sang Ki Nam ,  Tae Seung Cho ,  Ludovic Godet ,  Srinivas D. Nemani

IPC: H01L21/00 ,  C23C16/00 ,  C23C16/455 ,  H01J37/32 ,  C23C16/509 ,  C23C16/52

CPC classification number: C23C16/45565 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244

Abstract: The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells.

Abstract translation: 本发明提供了一种装置，其具有设置在等离子体处理室中的等离子体轮廓控制板，从而局部地改变等离子体密度，以在处理期间在衬底表面上提供均匀的等离子体分布。 在一个实施例中，处理套件包括被配置为设置在等离子体处理室中的板，通过其形成的多个孔，所述孔被构造成允许处理气体流过板，以及包括至少一个 孔，其中每个单元电池具有相对于设置在至少两个其它单元电池中的电极组件可独立控制的电极组件。