公开(公告)号：US09496350B2

公开(公告)日：2016-11-15

申请号：US14686024

申请日：2015-04-14

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Chizu Saito ,  Hiroyuki Kato ,  Michihiro Sano

IPC分类号： H01L29/227 ,  H01L29/36 ,  H01L21/02 ,  H01L29/12 ,  H01L29/22

CPC分类号： H01L29/227 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/12 ,  H01L29/22 ,  H01L29/36

摘要： A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9≦[11]/[13]

摘要翻译： 一种p型ZnO基化合物半导体单晶层，其中该层包括与（i）作为Cu和/或Ag的第11族元素​​共同掺杂的p型ZnO基化合物半导体单晶层，以及（ii） 选自B，Ga，Al和In中的至少一种13族元素，第11族元素​​[11]的浓度和第13族元素[13]的浓度满足关系：0.9≤[11 ] / [13] <100。

公开(公告)号：US09431590B2

公开(公告)日：2016-08-30

申请号：US14216146

申请日：2014-03-17

申请人： Cree, Inc.

发明人： Erin R. F. Welch ,  Harry A. Seibel, II ,  Christopher P. Hussell

IPC分类号： H01L29/22 ,  H01L33/58 ,  H01L33/48 ,  H01L27/15 ,  F21K99/00 ,  H01L33/56 ,  F21Y101/02 ,  F21Y105/00 ,  F21Y111/00

CPC分类号： H01L33/58 ,  F21K9/00 ,  F21K9/23 ,  F21K9/68 ,  F21Y2101/00 ,  F21Y2107/10 ,  F21Y2107/30 ,  F21Y2107/50 ,  F21Y2115/10 ,  H01L27/153 ,  H01L33/486 ,  H01L33/56 ,  Y10T29/41

摘要： Light emitter devices, such as light emitting diode (LED) devices and related methods are disclosed. A light emitter device includes a ceramic based substrate, at least one LED chip disposed on the substrate, and a filling material. The ceramic substrate can include one or more surface features. The filling material can be disposed over and/or within a portion of the one or more surface features. Surface features can include one or more pedestals, trenches, holes, indentions, depressions, waves, and/or convexly or concavely curved surfaces. Surface features can improve optics of the LED device, for example, improving brightness, reflection, and/or light extraction associated with the device. Related methods are disclosed.

摘要翻译： 公开了诸如发光二极管（LED）装置和相关方法的发光器件。 光发射器件包括基于陶瓷的衬底，设置在衬底上的至少一个LED芯片和填充材料。 陶瓷基板可以包括一个或多个表面特征。 填充材料可以设置在一个或多个表面特征的上方和/或其一部分内。 表面特征可以包括一个或多个基座，沟槽，孔，凹陷，凹陷，波浪和/或凸形或凹入曲面。 表面特征可以改善LED器件的光学元件，例如改善与器件相关联的亮度，反射和/或光提取。 公开了相关方法。

公开(公告)号：US09425371B2

公开(公告)日：2016-08-23

申请号：US14165810

申请日：2014-01-28

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Kaoru Hatano ,  Satoshi Seo

IPC分类号： H01L29/22 ,  H01L29/26 ,  H01L33/00 ,  H01L33/62 ,  H01L27/32 ,  H01L51/00

CPC分类号： H01L27/3262 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3276 ,  H01L29/22 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/62 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110, a base insulating film 112 over the lower support 110 which has a through-hole 130, a light-emitting element 127 over the base insulating film 112, and an upper support 122 over the light-emitting element 127. An electrode 131 is provided in the through-hole 130, and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112. The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.

公开(公告)号：US09368755B2

公开(公告)日：2016-06-14

申请号：US14477468

申请日：2014-09-04

申请人： LG DISPLAY CO., LTD.

发明人： Ji Hee Kim ,  Jung Bum Kim

IPC分类号： H01L29/08 ,  H01L27/15 ,  H01L29/22 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22

CPC分类号： H01L51/5271 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/5315 ,  H05B33/10 ,  H05B33/22

摘要： The present application relates to an organic light emitting device (OLED) and lighting devices. The exemplary OLED according to the present application, for example, may minimize evanescent coupling caused by surface plasmons, and the like, and may have excellent emission efficiency.

摘要翻译： 本申请涉及有机发光器件（OLED）和照明器件。 例如，根据本申请的示例性OLED可以最小化由表面等离子体等引起的ev逝耦合等，并且可以具有优异的发射效率。

公开(公告)号：USRE46004E1

公开(公告)日：2016-05-17

申请号：US14121840

申请日：2014-10-23

申请人： KABUSHIKI KAISHA TOSHIBA ,  NATIONAL CHUNG HSING UNIVERSITY

发明人： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

IPC分类号： H01L29/22 ,  H01L33/22

CPC分类号： H01L33/22 ,  H01L29/22 ,  H01L33/0079 ,  H01L33/44

摘要： This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.

摘要翻译： 本发明提供一种具有高导热性的发光芯片器件，其包括外延芯片，设置在外延芯片的顶表面上的电极和与电极配合的U形电极基底，以向外延芯片提供电能 用于通过电光效应产生光。 外延芯片包括具有粗糙化顶表面和粗糙化底表面的衬底和外延层结构，用于改善从外延芯片中提取的光。 在衬底和外延层结构之间形成导热透明反射层。 电极基体围绕基板，透明反射层和外延层结构的第一包层，以便于当外延芯片发光时产生的内部废热的耗散。 提供了本发明的芯片装置的制造方法。

公开(公告)号：US09305778B2

公开(公告)日：2016-04-05

申请号：US13859250

申请日：2013-04-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Young-jun Park ,  Jung-inn Sohn ,  Seung-nam Cha ,  Ji-yeon Ku

IPC分类号： H01B1/00 ,  H01L29/08 ,  H01L51/40 ,  H01L21/02 ,  H01B1/08 ,  H01L29/04 ,  H01L29/06 ,  B82Y10/00 ,  H01L29/22

CPC分类号： H01L21/02609 ,  B82Y10/00 ,  H01B1/08 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/22

摘要： A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

摘要翻译： 通过使用热化学气相沉积方法控制具有纤锌矿晶体结构的金属氧化物半导体的生长晶体面的方法包括通过使用源极使金属氧化物半导体在非极性方向上生长来控制生长晶面 包括降低金属氧化物半导体的极性面的表面能的热分解材料的材料。

公开(公告)号：US09293644B2

公开(公告)日：2016-03-22

申请号：US14040379

申请日：2013-09-27

申请人： SORAA, INC.

发明人： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J. F. David

IPC分类号： H05B37/02 ,  H01L29/22 ,  H01L33/02 ,  H01L33/32 ,  H01L33/40 ,  H01L33/16 ,  H01L33/20

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

摘要： A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

摘要翻译： 发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该装置具有横向尺寸和厚的垂直尺寸，使得几何纵横比形成体积二极管，其在横向尺寸的范围内传递几乎均匀的电流密度。

公开(公告)号：US09255342B2

公开(公告)日：2016-02-09

申请号：US13781543

申请日：2013-02-28

申请人： SIXPOINT MATERIALS, INC. ,  Seoul Semiconductor Co., Ltd.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： C30B7/10 ,  B28D5/00 ,  H01L21/02 ,  H01L29/20 ,  H01L29/22 ,  C30B9/00 ,  C30B28/04 ,  C30B29/40

CPC分类号： C30B7/105 ,  B24B37/042 ,  B28D5/00 ,  C30B9/00 ,  C30B28/04 ,  C30B29/403 ,  H01L21/02013 ,  H01L21/02389 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/22

摘要： The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

摘要翻译： 本发明公开了掺杂有铋（Bi）的GaxAlyIn1-x-yN（0＆nlE; x＆nlE; 1,0＆amp; nlE; x + y＆nlE; 1）的半绝缘晶片。 半绝缘晶片的电阻率为104ohm-cm以上。 尽管获得III族氮化物的单晶锭是非常困难的，但是该方法可以生长具有位错密度/晶界小于105cm -2的III族氮化物的高取向聚晶或单晶锭。 本发明还公开了制造半绝缘III族氮化物块状晶体和晶片的方法。

公开(公告)号：US09231163B2

公开(公告)日：2016-01-05

申请号：US14257610

申请日：2014-04-21

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Mamoru Miyachi ,  Tatsuma Saito ,  Takako Hayashi ,  Yusuke Yokobayashi ,  Takanobu Akagi ,  Ryosuke Kawai

IPC分类号： H01L27/15 ,  H01L29/18 ,  H01L29/22 ,  H01L21/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/06 ,  H01L33/08 ,  H01L33/00 ,  H01L33/60 ,  H01L33/62

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/08 ,  H01L33/382 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/10158 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

摘要翻译： 半导体发光装置包括n型层，有源层和p型层的半导体层叠; 从p型层穿透层叠并露出n型层的凹部; n侧电极形成在凹部的底部的n型层上并在p型层上方向上延伸; p侧电极，形成在p型层上，在俯视图中具有围绕凹部的开口，n侧电极从内侧延伸到凹部的上方; 以及设置在p型层的p侧和n侧电极之间的绝缘层，p侧电极构成反射从有源层入射的光的反射电极，n侧电极包括反射电极层 在平面图中覆盖开口并且反射从发射层侧入射的光，反射电极层在平面图中具有与p侧电极的周边部分重叠的周边部分。

公开(公告)号：US09224599B2

公开(公告)日：2015-12-29

申请号：US14576401

申请日：2014-12-19

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Shan-Haw Chiou ,  Tzu-Chi Chou ,  Chiung-Hui Huang ,  Yu-Tzu Hsieh

IPC分类号： H01L21/02 ,  H01L29/22 ,  H01L29/36

CPC分类号： H01L21/02579 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/22 ,  H01L29/36

摘要： A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1−3)Ga(1−b)Zn(1+a+b)O4, wherein 0≦a≦0.1, 0≦b≦0.1, and 0

摘要翻译： 提供了P型金属氧化物半导体材料。 P型金属氧化物半导体材料具有In（1-3）Ga（1-b）Zn（1 + a + b）O4的式，其中0＆nlE; a＆nlE; 0.1,0＆amp; nlE; b＆nlE; 0.1和0 < a + b＆nlE; 0.16。 特别是，P型金属氧化物半导体材料的空穴载流子浓度为1×10 11 cm -3〜5×10 18 cm -3。