公开(公告)号：US07490661B2

公开(公告)日：2009-02-17

申请号：US11365899

申请日：2006-03-01

Applicant: Tatsuhiko Nishino ,  Tetsuya Takeuchi ,  Yoshiki Katoh

Inventor： Tatsuhiko Nishino ,  Tetsuya Takeuchi ,  Yoshiki Katoh

IPC: F28F9/02 ,  F28D1/02 ,  F28D7/06 ,  F25B39/02

CPC classification number: F25B39/028 ,  F25B2500/01 ,  F28D1/05391 ,  F28F9/0204 ,  F28F9/028

Abstract: A heat exchanger is provided with a header tank having therein a circulation portion in which fluid flows, and multiple tubes which are stacked in a longitudinal direction of the header tank. The circulation portion is communicated with interiors of the tubes, and partitioned into an inlet side passage and other passages. An inflow port member is arranged at a longitudinal-direction end of the inlet side passage, and provided with multiple openings for causing at least a mainstream flow and a substream flow of fluid introduced toward the tubes. The mainstream flow is substantially evenly flow-divided by the substream flow.

Abstract translation: 热交换器具有集流箱，其中具有流体流动的循环部分，以及在集管箱的纵向方向上堆叠的多个管。 循环部与管的内部连通，分隔成入口侧通路和其他通路。 入口端口构件布置在入口侧通道的纵向端部处，并且设置有多个开口，用于至少使主导流和流向管引入的流体的子流流动。 主流流量基本上均匀地流过分流流。

公开(公告)号：US07096786B2

公开(公告)日：2006-08-29

申请号：US10993284

申请日：2004-11-18

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: B41F31/00

CPC classification number: B41F31/18

Abstract: An ink fountain apparatus for a rotary printing press includes an ink fountain, an intermediate ink dam, and press unit for simultaneously pressing the intermediate ink dam toward the outer surface of the fountain roller and toward the upper surface of the bottom plate. A width of the first surface close to the boundary portion in the axial direction of the fountain roller is set to be smaller than a width of the first surface arranged upstream of the fountain roller in a rotational direction from the boundary portion in the axial direction of the fountain roller.

Abstract translation: 一种用于旋转印刷机的墨斗装置包括一个墨斗，中间墨水容器和压制单元，用于同时将中间墨水容器朝向墨斗辊的外表面压向底板的上表面。 所述第一表面的靠近所述供墨辊的轴向方向上的所述边界部分的宽度被设定为小于所述第一表面的宽度，所述第一表面布置在所述供墨辊的上游， 墨斗。

公开(公告)号：US07033938B2

公开(公告)日：2006-04-25

申请号：US10785747

申请日：2004-02-23

Applicant: David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

Inventor： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

IPC: H01L21/44

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

Abstract: The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.

Abstract translation: 通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区 包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力 在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。

公开(公告)号：US20050263780A1

公开(公告)日：2005-12-01

申请号：US11177670

申请日：2005-07-07

Applicant: David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

Inventor： David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

公开(公告)号：US20050103216A1

公开(公告)日：2005-05-19

申请号：US10993284

申请日：2004-11-18

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: B41F31/04 ,  B41F31/18 ,  B41F31/02

CPC classification number: B41F31/18

Abstract: An ink fountain apparatus for a rotary printing press includes an ink fountain, an intermediate ink dam, and press unit for simultaneously pressing the intermediate ink dam toward the outer surface of the fountain roller and toward the upper surface of the bottom plate. A width of the first surface close to the boundary portion in the axial direction of the fountain roller is set to be smaller than a width of the first surface arranged upstream of the fountain roller in a rotational direction from the boundary portion in the axial direction of the fountain roller.

Abstract translation: 一种用于旋转印刷机的墨斗装置包括一个墨斗，中间墨水容器和压制单元，用于同时将中间墨水容器朝向墨斗辊的外表面压向底板的上表面。 所述第一表面的靠近所述供墨辊的轴向方向上的所述边界部分的宽度被设定为小于所述第一表面的宽度，所述第一表面布置在所述供墨辊的上游， 墨斗。

公开(公告)号：US06887727B2

公开(公告)日：2005-05-03

申请号：US10352491

申请日：2003-01-28

Applicant: Tetsuya Takeuchi ,  Ying-Ian Chang

Inventor： Tetsuya Takeuchi ,  Ying-Ian Chang

IPC: C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/125 ,  H01S5/323 ,  H01L21/20

CPC classification number: H01L33/32 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

Abstract: A method and system for growing a layer of semiconductor material is disclosed. The method can be used to grow a layer of a semiconducting material comprising at least one Group III element, nitrogen and at least one other Group V element as constituent elements thereof, the method comprising providing a reactor and supplying precursors to the reactor. The precursors include a precursor for each of the at least one Group III element, a precursor for the nitrogen, a precursor for each of the at least one Group V element other than nitrogen, and a precursor for an element having a stronger bond strength with nitrogen than each of the at least one Group III element has with nitrogen. The method can be implemented in, for example, a metal organic chemical vapor deposition (MOCVD) reactor.

Abstract translation: 公开了一种用于生长半导体材料层的方法和系统。 该方法可用于生长包含至少一种III族元素，氮和至少一种其它V族元素作为其构成元素的半导体材料层，该方法包括提供反应器并向反应器供应前体。 前体包括用于至少一种III族元素中的每一种的前体，氮的前体，除氮以外的至少一种第V族元素中的每一种的前体，以及具有与 与所述至少一种III族元素中的每一个具有氮的氮相同。 该方法可以在例如金属有机化学气相沉积（MOCVD）反应器中实现。

公开(公告)号：US06878970B2

公开(公告)日：2005-04-12

申请号：US10418408

申请日：2003-04-17

Applicant: David P. Bour ,  Michael H. Leary ,  Ying-Lan Chang ,  Yoon-Kyu Song ,  Michael R. T. Tan ,  Tetsuya Takeuchi ,  Danielle Chamberlin

Inventor： David P. Bour ,  Michael H. Leary ,  Ying-Lan Chang ,  Yoon-Kyu Song ,  Michael R. T. Tan ,  Tetsuya Takeuchi ,  Danielle Chamberlin

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/00 ,  H01L29/06

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105

Abstract: Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

Abstract translation: 描述发光器件。 发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。 第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。 第一层位于量子阱层和第一阻挡层之间。 第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。 发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。 载体捕获元素增加量子阱的有效载流子俘获截面。

公开(公告)号：US06849472B2

公开(公告)日：2005-02-01

申请号：US09992192

申请日：2001-11-13

Applicant: Michael R. Krames ,  Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

Inventor： Michael R. Krames ,  Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

IPC: H01L21/20 ,  H01L21/205 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01S5/02 ,  H01S5/32 ,  H01S5/343 ,  H01L21/00

CPC classification number: H01L33/16 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/1844 ,  H01L31/1852 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333 ,  Y02E10/544

Abstract: A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.

Abstract translation: 一种制造包括III-氮化物量子阱层的发光半导体器件的方法包括选择量子阱层的面取向以控制压电场的场强和/或自发电场的场强 量子阱层，并用选定的面取向生长量子阱层。 例如，可以选择小面取向以减小压电场的大小和/或自发电场的大小。 也可以选择面取向以控制或减小组合的压电和自发电场强度的大小。

公开(公告)号：US06829273B2

公开(公告)日：2004-12-07

申请号：US10040328

申请日：2001-12-19

Applicant: Hiroshi Amano ,  Isamu Akasaki ,  Yawara Kaneko ,  Norihide Yamada ,  Tetsuya Takeuchi ,  Satoshi Watanabe

Inventor： Hiroshi Amano ,  Isamu Akasaki ,  Yawara Kaneko ,  Norihide Yamada ,  Tetsuya Takeuchi ,  Satoshi Watanabe

IPC: H01S500

CPC classification number: B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173

Abstract: The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.

Abstract translation: 氮化物半导体层结构包括缓冲层和缓冲层上的复合层。 缓冲层是包含AlN的低温沉积氮化物半导体材料的层。 复合层是包含AlN的单晶氮化物半导体材料层。 复合层包括邻近缓冲层的第一子层和第一子层上的第二子层。 复合层的单晶氮化物半导体材料在第一子层中具有第一AlN摩尔分数，并且在第二子层中具有第二AlN摩尔分数。 第二AlN摩尔分数大于第一AlN摩尔分数。 氮化物半导体激光器包括上述氮化物半导体层结构的一部分，并且还包括复合层上的光波导层和光波导层上的有源层。

公开(公告)号：US06756325B2

公开(公告)日：2004-06-29

申请号：US10140625

申请日：2002-05-07

Applicant: David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

Inventor： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

IPC: H01L2100

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

Abstract: Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.

Abstract translation: 公开了用于制造用于长波长发光器件的有源区的几种方法。 在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟镓氮化物（InGaAsN）膜的生长，向反应器供应III-V族前体混合物，其包含 胂，二甲基肼，烷基镓，烷基铟和载气，其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器加压至 其中与二氧化肼的二氧化氮中提取出长于1.2μm的波长的发光相当的氮浓度并沉积在基板上。