Heat exchanger
    81.
    发明授权
    Heat exchanger 有权
    热交换器

    公开(公告)号:US07490661B2

    公开(公告)日:2009-02-17

    申请号:US11365899

    申请日:2006-03-01

    Abstract: A heat exchanger is provided with a header tank having therein a circulation portion in which fluid flows, and multiple tubes which are stacked in a longitudinal direction of the header tank. The circulation portion is communicated with interiors of the tubes, and partitioned into an inlet side passage and other passages. An inflow port member is arranged at a longitudinal-direction end of the inlet side passage, and provided with multiple openings for causing at least a mainstream flow and a substream flow of fluid introduced toward the tubes. The mainstream flow is substantially evenly flow-divided by the substream flow.

    Abstract translation: 热交换器具有集流箱,其中具有流体流动的循环部分,以及在集管箱的纵向方向上堆叠的多个管。 循环部与管的内部连通,分隔成入口侧通路和其他通路。 入口端口构件布置在入口侧通道的纵向端部处,并且设置有多个开口,用于至少使主导流和流向管引入的流体的子流流动。 主流流量基本上均匀地流过分流流。

    Ink fountain apparatus for rotary printing press
    82.
    发明授权
    Ink fountain apparatus for rotary printing press 有权
    旋转印刷机油墨机

    公开(公告)号:US07096786B2

    公开(公告)日:2006-08-29

    申请号:US10993284

    申请日:2004-11-18

    Inventor: Tetsuya Takeuchi

    CPC classification number: B41F31/18

    Abstract: An ink fountain apparatus for a rotary printing press includes an ink fountain, an intermediate ink dam, and press unit for simultaneously pressing the intermediate ink dam toward the outer surface of the fountain roller and toward the upper surface of the bottom plate. A width of the first surface close to the boundary portion in the axial direction of the fountain roller is set to be smaller than a width of the first surface arranged upstream of the fountain roller in a rotational direction from the boundary portion in the axial direction of the fountain roller.

    Abstract translation: 一种用于旋转印刷机的墨斗装置包括一个墨斗,中间墨水容器和压制单元,用于同时将中间墨水容器朝向墨斗辊的外表面压向底板的上表面。 所述第一表面的靠近所述供墨辊的轴向方向上的所述边界部分的宽度被设定为小于所述第一表面的宽度,所述第一表面布置在所述供墨辊的上游, 墨斗。

    Ink fountain apparatus for rotary printing press
    85.
    发明申请
    Ink fountain apparatus for rotary printing press 有权
    旋转印刷机油墨机

    公开(公告)号:US20050103216A1

    公开(公告)日:2005-05-19

    申请号:US10993284

    申请日:2004-11-18

    Inventor: Tetsuya Takeuchi

    CPC classification number: B41F31/18

    Abstract: An ink fountain apparatus for a rotary printing press includes an ink fountain, an intermediate ink dam, and press unit for simultaneously pressing the intermediate ink dam toward the outer surface of the fountain roller and toward the upper surface of the bottom plate. A width of the first surface close to the boundary portion in the axial direction of the fountain roller is set to be smaller than a width of the first surface arranged upstream of the fountain roller in a rotational direction from the boundary portion in the axial direction of the fountain roller.

    Abstract translation: 一种用于旋转印刷机的墨斗装置包括一个墨斗,中间墨水容器和压制单元,用于同时将中间墨水容器朝向墨斗辊的外表面压向底板的上表面。 所述第一表面的靠近所述供墨辊的轴向方向上的所述边界部分的宽度被设定为小于所述第一表面的宽度,所述第一表面布置在所述供墨辊的上游, 墨斗。

    System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element
    86.
    发明授权
    System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element 失效
    使用附加元件增加氮掺入半导体材料层的系统和方法

    公开(公告)号:US06887727B2

    公开(公告)日:2005-05-03

    申请号:US10352491

    申请日:2003-01-28

    Abstract: A method and system for growing a layer of semiconductor material is disclosed. The method can be used to grow a layer of a semiconducting material comprising at least one Group III element, nitrogen and at least one other Group V element as constituent elements thereof, the method comprising providing a reactor and supplying precursors to the reactor. The precursors include a precursor for each of the at least one Group III element, a precursor for the nitrogen, a precursor for each of the at least one Group V element other than nitrogen, and a precursor for an element having a stronger bond strength with nitrogen than each of the at least one Group III element has with nitrogen. The method can be implemented in, for example, a metal organic chemical vapor deposition (MOCVD) reactor.

    Abstract translation: 公开了一种用于生长半导体材料层的方法和系统。 该方法可用于生长包含至少一种III族元素,氮和至少一种其它V族元素作为其构成元素的半导体材料层,该方法包括提供反应器并向反应器供应前体。 前体包括用于至少一种III族元素中的每一种的前体,氮的前体,除氮以外的至少一种第V族元素中的每一种的前体,以及具有与 与所述至少一种III族元素中的每一个具有氮的氮相同。 该方法可以在例如金属有机化学气相沉积(MOCVD)反应器中实现。

    Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
    89.
    发明授权
    Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same 失效
    氮化物半导体层结构和包含其一部分的氮化物半导体激光器

    公开(公告)号:US06829273B2

    公开(公告)日:2004-12-07

    申请号:US10040328

    申请日:2001-12-19

    Abstract: The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.

    Abstract translation: 氮化物半导体层结构包括缓冲层和缓冲层上的复合层。 缓冲层是包含AlN的低温沉积氮化物半导体材料的层。 复合层是包含AlN的单晶氮化物半导体材料层。 复合层包括邻近缓冲层的第一子层和第一子层上的第二子层。 复合层的单晶氮化物半导体材料在第一子层中具有第一AlN摩尔分数,并且在第二子层中具有第二AlN摩尔分数。 第二AlN摩尔分数大于第一AlN摩尔分数。 氮化物半导体激光器包括上述氮化物半导体层结构的一部分,并且还包括复合层上的光波导层和光波导层上的有源层。

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