公开(公告)号：US20150034373A1

公开(公告)日：2015-02-05

申请号：US14379420

申请日：2013-02-13

申请人： Yoshiki Nakashima ,  Masahiro Kubo ,  Akinobu Shibuya

发明人： Yoshiki Nakashima ,  Masahiro Kubo ,  Akinobu Shibuya

IPC分类号： H05K3/12 ,  H05K1/03 ,  H05K1/09

CPC分类号： H05K3/1275 ,  H05K1/0313 ,  H05K1/09 ,  H05K3/4685 ,  H05K2201/0129 ,  H05K2201/0137 ,  H05K2203/0278 ,  Y10T29/49155

摘要： A wiring structure includes a substrate, a convexoconcave absorption layer including a convexoconcave portion on the substrate, a conductive layer pattern on at least a concave portion of the convexoconcave absorption layer, and an insulating layer pattern over the conductive layer pattern and the convexoconcave absorption layer, on at least the concave portion. This configuration provides a wiring structure and a manufacturing method thereof which enable to form fine multilayer wiring using microcontact printing or the like.

摘要翻译： 布线结构包括基板，在基板上包括凸凹部的凸凹陷波吸收层，凹凸吸收层的至少凹部的导电层图案，以及导电层图案和凹凸吸收层之上的绝缘层图案 至少在凹部上。 这种结构提供了使用微接触印刷等形成精细多层布线的布线结构及其制造方法。

公开(公告)号：US20130012145A1

公开(公告)日：2013-01-10

申请号：US13636576

申请日：2011-03-15

申请人： Akinobu Shibuya ,  Akira Ouchi ,  Akira Miyata ,  Ryo Miyazaki ,  Yoshiaki Wakabayashi

发明人： Akinobu Shibuya ,  Akira Ouchi ,  Akira Miyata ,  Ryo Miyazaki ,  Yoshiaki Wakabayashi

IPC分类号： H04B1/38

CPC分类号： H01P5/024 ,  H01L23/48 ,  H01L23/49827 ,  H01L23/49833 ,  H01L2223/6627 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01P3/12 ,  H05K1/0239 ,  H05K1/141 ,  H05K2201/096 ,  H05K2201/09854 ,  H05K2201/09981 ,  H01L2224/0401

摘要： Provided is a radio module that includes a radio signal connection portion having a low insertion loss and high reliability.This radio module includes a first wiring substrate 1, and a second wiring substrate 2 which is located opposite to a first face 1a of the first wiring substrate 1. Further, at least one through hole 3 having an inner wall formed of a conductive material is provided inside the second wiring substrate. Moreover, at least one hollow pillar 4 formed of a conductive material is provided at a position corresponding to the at least one through hole 3, on at least one of the first face 1a and a second face 2a of the second wiring substrate 2, the second face 2a being opposite to the first face 1a. Here, an axis-direction height of the at least one hollow pillar 4 formed of a conductive material is smaller than the width of a gap between the first face 1a and the second face 2a. Further, one end face of the at least one hollow pillar 4 formed of a conductive material is not fixed, and a radio signal passes through a hollow portion of the at least one pillar.

摘要翻译： 提供一种无线电模块，其包括具有低插入损耗和高可靠性的无线电信号连接部分。 该无线电模块包括第一布线基板1和与第一布线基板1的第一面1a相对的第二布线基板2.此外，具有由导电材料形成的内壁的至少一个通孔3是 设置在第二布线基板的内部。 此外，在与第二布线基板2的第一面1a和第二面2a中的至少一个相对应的至少一个通孔3的位置处设置由导电材料形成的至少一个中空柱4， 第二面2a与第一面1a相对。 这里，由导电材料形成的至少一个中空柱4的轴向高度小于第一面1a和第二面2a之间的间隙的宽度。 此外，由导电材料形成的至少一个中空柱4的一个端面不固定，并且无线电信号通过至少一个支柱的中空部分。

公开(公告)号：US06703705B2

公开(公告)日：2004-03-09

申请号：US09996054

申请日：2001-11-28

申请人： Takao Yamazaki ,  Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi ,  Yuzo Shimada

发明人： Takao Yamazaki ,  Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi ,  Yuzo Shimada

IPC分类号： H01L2352

CPC分类号： H01L24/81 ,  H01L23/50 ,  H01L23/642 ,  H01L24/73 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30105 ,  H01L2924/30107

摘要： A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leads 5 electrically connected to each of the pads and adhered to the LSI device via an insulation layer, and decoupling capacitors mounted on one surface of the metal foil leads.

摘要翻译： 半导体器件具有在电路形成面的周边部分设置有多个电源线连接焊盘和接地线连接焊盘的LSI器件，电连接到每个焊盘并粘附到LSI的金属箔引线5 通过绝缘层的器件，以及安装在金属箔引线的一个表面上的去耦电容器。

公开(公告)号：US5576518A

公开(公告)日：1996-11-19

申请号：US439945

申请日：1995-05-12

申请人： Akinobu Shibuya ,  Mitsuru Kimura

发明人： Akinobu Shibuya ,  Mitsuru Kimura

IPC分类号： H05K3/46 ,  H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H05K1/02

CPC分类号： H01L23/5384 ,  H01L21/485 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/09701

摘要： A via-structure off a multilayer interconnection ceramic substrate for a multi-chip module, a semiconductor package and an insulating substrate has a high strength and a high reliability being produced at a low cost. A gap is provided at an interface between a via-conductor and ceramics, and filled with a resin. The resin is preferably of a thermosetting polyimide resin or a benzo-cyclo-butene resin.

摘要翻译： 用于多芯片模块，半导体封装和绝缘衬底的多层互连陶瓷衬底的通孔结构具有高成本的高强度和高可靠性。 在通孔导体和陶瓷之间的界面处提供间隙，并填充树脂。 树脂优选为热固性聚酰亚胺树脂或苯并环丁烯树脂。

公开(公告)号：US20110302753A1

公开(公告)日：2011-12-15

申请号：US13203018

申请日：2010-02-12

申请人： Akinobu Shibuya ,  Koichi Takemura ,  Takashi Manako

发明人： Akinobu Shibuya ,  Koichi Takemura ,  Takashi Manako

IPC分类号： H01G7/00

CPC分类号： H01G7/00 ,  H01L22/14 ,  H01L22/20 ,  H01L27/016 ,  H01L2924/0002 ,  Y10T29/43 ,  Y10T29/435 ,  H01L2924/00

摘要： In a capacitor producing method, a bottom electrode, a thin-film dielectric, and a top electrode are deposited on a substrate so as to form a capacitor, wherein defects including particles and electrical short-circuits between the bottom electrode and the top electrode are detected before the capacitor is divided into capacitor cells. Next, defects such as particles and electrical short-circuits between the bottom electrode and the top electrode are removed before the capacitor is divided into capacitor cells.

摘要翻译： 在电容器制造方法中，在基板上沉积底电极，薄膜电介质和顶电极以形成电容器，其中包括在底电极和顶电极之间的颗粒和电短路的缺陷是 在电容器分为电容器单元之前检测。 接下来，在将电容器分成电容器单元之前，去除在底部电极和顶部电极之间的诸如颗粒和电气短路的缺陷。

公开(公告)号：US20100308474A1

公开(公告)日：2010-12-09

申请号：US12526236

申请日：2008-02-29

申请人： Akinobu Shibuya ,  Koichi Takemura ,  Akira Ouchi ,  Tomoo Murakami

发明人： Akinobu Shibuya ,  Koichi Takemura ,  Akira Ouchi ,  Tomoo Murakami

IPC分类号： H01L23/488 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L21/563 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83385 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/18165 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00014

摘要： A substrate (1) and a semiconductor chip (5) are connected by means of flip-chip interconnection. Around connecting pads (3) of the substrate (1) and input/output terminals (10) of the semiconductor chip (5), an underfill material (7) is injected. The underfill material (7) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate (1), which is not covered with the underfill material (7), and the side surfaces of the semiconductor chip (5) are encapsulated with a molding material (8). The molding material (8) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate (1) and the semiconductor chip (5), which are covered with the molding material (8), is thinned from above and below.

摘要翻译： 基板（1）和半导体芯片（5）通过倒装芯片互连连接。 在衬底（1）的连接焊盘（3）和半导体芯片（5）的输入/输出端子（10）之间，注入底部填充材料（7）。 底部填充材料（7）是填料和树脂的复合材料，其中填料的最大粒径为5μm以下，填料的含量为40〜60重量％。 此外，未被底部填充材料（7）覆盖的基板（1）的第一主表面和半导体芯片（5）的侧表面被模制材料（8）封装。 成型材料（8）是填料和树脂的复合材料，其填料含量超过75重量％，树脂的玻璃化转变温度超过180℃。基板（1）和半导体 由模制材料（8）覆盖的芯片（5）从上方和下方变薄。

公开(公告)号：US20100044089A1

公开(公告)日：2010-02-25

申请号：US12529378

申请日：2008-02-28

申请人： Akinobu Shibuya ,  Yasuhiro Ishii ,  Toru Mori ,  Koichi Takemura

发明人： Akinobu Shibuya ,  Yasuhiro Ishii ,  Toru Mori ,  Koichi Takemura

IPC分类号： H05K1/16 ,  H05K3/30

CPC分类号： H05K1/162 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L27/016 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15311 ,  H05K3/4614 ,  H05K2201/09309 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/09763 ,  H05K2201/10378 ,  H05K2203/061 ,  Y10T29/4913 ,  H01L2924/00014

摘要： An interposer integrated with capacitors (100) includes a plug substrate (10) in which via-plugs (12) is formed, and a capacitor substrate (20) in which capacitors are formed. The capacitor substrate (20) includes a substrate body (21), capacitors (22) formed on the main surface of the substrate body, a cover insulating film (25) that covers the capacitors, a terminal electrodes (26) connected to the electrodes of the capacitor and formed on the cover insulating film, electrode pads (24) formed on the rear surface of the substrate body, and via-plugs 23 connecting together the terminal electrodes and electrode pads. The plug substrate (10) includes a substrate body (11), and electrode pads (13) formed on the main surface of the substrate body corresponding to the terminal electrodes of the capacitor substrate, and via-plugs (12) penetrating the substrate body and connected to the electrode pads.

摘要翻译： 与电容器（100）集成的插入器包括其中形成有通孔（12）的插头基板（10）和形成有电容器的电容器基板（20）。 电容器基板（20）包括基板主体（21），形成在基板主体的主表面上的电容器（22），覆盖电容器的覆盖绝缘膜（25），与电极连接的端子电极 的电容器，形成在覆盖绝缘膜上，形成在基板主体的后表面上的电极焊盘（24）以及将端子电极和电极焊盘连接在一起的通孔塞23。 插头基板（10）包括基板主体（11），和形成在基板主体的与主电极基板的端子电极对应的主面上的电极焊盘（13）以及穿过基板体的通孔（12） 并连接到电极焊盘。

公开(公告)号：US06949815B2

公开(公告)日：2005-09-27

申请号：US10746603

申请日：2003-12-23

申请人： Takao Yamazaki ,  Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi ,  Yuzo Shimada

发明人： Takao Yamazaki ,  Toru Mori ,  Akinobu Shibuya ,  Shintaro Yamamichi ,  Yuzo Shimada

IPC分类号： H05K3/34 ,  H01L21/60 ,  H01L21/822 ,  H01L23/12 ,  H01L23/50 ,  H01L23/64 ,  H01L27/04 ,  H01L23/52 ,  H01L23/32 ,  H01L23/48 ,  H01G9/05

CPC分类号： H01L24/81 ,  H01L23/50 ,  H01L23/642 ,  H01L24/73 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30105 ,  H01L2924/30107

摘要： A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leads 5 electrically connected to each of the pads and adhered to the LSI device via an insulation layer, and decoupling capacitors mounted on one surface of the metal foil leads.

摘要翻译： 半导体器件具有在电路形成面的周边部分设置有多个电源线连接焊盘和接地线连接焊盘的LSI器件，电连接到每个焊盘并粘附到LSI的金属箔引线5 通过绝缘层的器件，以及安装在金属箔引线的一个表面上的去耦电容器。

公开(公告)号：US06466124B1

公开(公告)日：2002-10-15

申请号：US09546334

申请日：2000-04-10

申请人： Akinobu Shibuya ,  Koji Matsui

发明人： Akinobu Shibuya ,  Koji Matsui

IPC分类号： H01C1012

CPC分类号： H01L28/24 ,  H01C7/006 ,  H01C7/06 ,  H01L23/49822 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/167 ,  H05K3/4644 ,  H01L2924/00

摘要： There is provided a thin film resistor formed of titanium nitride containing oxygen in a solid solution condition.

摘要翻译： 提供了由固溶体状态的含有氮的氮化钛构成的薄膜电阻体。

公开(公告)号：US06278153B1

公开(公告)日：2001-08-21

申请号：US09420561

申请日：1999-10-19

申请人： Katsumi Kikuchi ,  Tadanori Shimoto ,  Koji Matsui ,  Akinobu Shibuya

发明人： Katsumi Kikuchi ,  Tadanori Shimoto ,  Koji Matsui ,  Akinobu Shibuya

IPC分类号： H01L27108

CPC分类号： H01L28/55 ,  H01L21/3212 ,  H01L21/76877 ,  H01L28/75 ,  H05K1/162

摘要： There is provided a thin film capacitor including (a) a lower electrode, (b) an insulating layer formed burying the lower electrode therein and formed with a via-hole reaching the lower electrode, (c) a dielectric layer formed on an inner sidewall of the via-hole and covering an exposed surface of the lower electrode therewith, and (d) an upper electrode surrounded by the dielectric layer. In accordance with the thin film capacitor, the upper electrode is formed to be buried in the via-hole formed above the lower electrode. Hence, it is possible to prevent short-circuit between the upper and lower electrodes, and degradation of the dielectric layer during fabrication of a thin film capacitor, both of which enhances reliability of a capacitor. In addition, a multi-layered wiring structure could be readily fabricated on the thin film capacitor.

摘要翻译： 提供一种薄膜电容器，其包括（a）下电极，（b）在其中埋设下电极并形成有到达下电极的通孔形成的绝缘层，（c）形成在内侧壁上的电介质层 的通孔，并且覆盖下电极的暴露表面，以及（d）由电介质层包围的上电极。 根据薄膜电容器，上电极被形成为埋在形成在下电极上的通孔中。 因此，可以防止上下电极之间的短路，以及薄膜电容器的制造时的电介质层的劣化，这两者都提高了电容器的可靠性。 此外，可以容易地在薄膜电容器上制造多层布线结构。