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    ELECTRODE STRUCTURE OF MEMORY CAPACITOR AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    ELECTRODE STRUCTURE OF MEMORY CAPACITOR AND MANUFACTURING METHOD THEREOF 有权
    存储电容器的电极结构及其制造方法

    公开(公告)号：US20090224362A1

    公开(公告)日：2009-09-10

    申请号：US12205935

    申请日：2008-09-08

    申请人： Su-Tsai Lu ,  Wen-Hwa Chen ,  Hsien-Chie Cheng ,  Yun-Chiao Chen

    发明人： Su-Tsai Lu ,  Wen-Hwa Chen ,  Hsien-Chie Cheng ,  Yun-Chiao Chen

    IPC分类号： H01L27/06 ,  H01L21/20

    CPC分类号： H01L28/86 ,  H01L28/82 ,  H01L28/90

    摘要： After a fabrication process intended to miniaturize semiconductor devices, a surface area of a stack capacitor in a random access memory (RAM) is significantly reduced and capacity thereof is thus decreased, which in turn causes the capacitor not able to function properly. The present invention provides a composite lower electrode structure consisting of an exterior annular pipe and a central pillar having concave-convex surfaces to increase a surface area of the capacitor within a limited memory cell so as to enhance the capacity. To reinforce intensity of a structure of the capacitor, the exterior annular pipe has an elliptic radial cross section and a thicker thickness along a short axis direction.

    摘要翻译： 在旨在使半导体器件小型化的制造工艺之后，随机存取存储器（RAM）中的堆叠电容器的表面积显着减小，并且其容量因此降低，这又导致电容器不能正常工作。 本发明提供了一种由外部环形管和具有凹凸表面的中心柱构成的复合下电极结构，以增加有限存储单元内的电容器的表面积，从而提高容量。 为了加强电容器的结构的强度，外部环形管具有沿着短轴方向的椭圆形的径向横截面和较厚的厚度。

    Wafer level package structure of optical-electronic device and method for making the same
    7.
    发明授权
    Wafer level package structure of optical-electronic device and method for making the same 失效
    光电子器件的晶圆级封装结构及其制造方法

    公开(公告)号：US07317235B2

    公开(公告)日：2008-01-08

    申请号：US11082899

    申请日：2005-03-18

    申请人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

    发明人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

    IPC分类号： H01L31/0203

    CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    摘要： A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.

    摘要翻译： 公开了一种光电子器件的晶片级封装结构及其制造方法。 光电子器件的晶片级封装结构通过采用其表面具有多个光敏区域并分成单个封装器件的衬底来提供。 制造步骤首先涉及提供具有表面具有光敏区域和接合焊盘的几个芯片的基板，并且提供其表面具有导电电路和划线的透明层。 然后，接合焊盘接合到导电电路，并且在芯片上形成保护层以暴露部分导电电路。 在保护层上形成导电膜，并且导电膜与延伸的导电电路接触以形成光电子器件的晶片级封装结构。 最后，根据划线对透明层进行切割，形成单独的封装装置。