公开(公告)号：US5581087A

公开(公告)日：1996-12-03

申请号：US384747

申请日：1995-02-07

申请人： Ashraf Uddin ,  Fumio Ueno

发明人： Ashraf Uddin ,  Fumio Ueno

IPC分类号： G01T1/20 ,  G01T1/24 ,  H01L31/0232 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/101

CPC分类号： H01L31/0312 ,  H01L31/02322

摘要： A radiation detector includes a photodiode composed of an .alpha.-SiC substrate of a first conductivity type, a first .alpha.-SiC layer of the first conductivity type epitaxially formed on the .alpha.-SiC substrate, a second .alpha.-SiC layer of a second conductivity type having higher carriers concentration than the first .alpha.-SiC layer and epitaxially formed on the first .alpha.-SiC layer, a first electrode formed on the .alpha.-SiC substrate in ohmic contact, and a second electrode formed on the second .alpha.-SiC layer in ohmic contact; and a phosphor layer disposed on the photodiode to emit ultraviolet-rays by exposure of radiations.

摘要翻译： 辐射检测器包括由第一导电类型的α-SiC衬底，外延形成在α-Si衬底上的第一导电类型的第一α-SiC层，第二导电类型的第二α-SiC层， 具有比第一α-SiC层高的载流子浓度并且在第一α-SiC层上外延形成的第一电极，形成在欧姆接触的α-SiC基板上的第一电极，以及形成在第二α-SiC层上的第二电极，欧姆 联系; 以及设置在光电二极管上以通过辐射曝光而发射紫外线的荧光体层。

公开(公告)号：US6110596A

公开(公告)日：2000-08-29

申请号：US721346

申请日：1996-09-26

申请人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Hiroyasu Sumino ,  Fumio Ueno

发明人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Hiroyasu Sumino ,  Fumio Ueno

IPC分类号： H05K1/05 ,  C04B37/02 ,  H01L23/14 ,  H05K3/38 ,  C04B35/58

CPC分类号： C04B35/645 ,  C03C8/24 ,  C04B35/584 ,  C04B35/64 ,  C04B37/025 ,  H05K3/38 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3258 ,  C04B2235/3878 ,  C04B2235/3895 ,  C04B2235/447 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/658 ,  C04B2235/72 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/10 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/405 ,  C04B2237/407 ,  C04B2237/592 ,  C04B2237/62 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/86 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  Y10T428/24975 ,  Y10T428/265

摘要： Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.

摘要翻译： 公开了一种电路基板，其包括在室温下为80W / mK以上的导热性的氮化硅陶瓷板1和通过玻璃层3与氮化硅陶瓷板1接合的金属板2，以及半导体装置 其中安装有电路基板。

公开(公告)号：US4883780A

公开(公告)日：1989-11-28

申请号：US157150

申请日：1988-02-11

申请人： Mituo Kasori ,  Kazuo Shinozaki ,  Kazuo Anzai ,  Akihiko Tsuge ,  Hiroshi Imagawa ,  Takeshi Takano ,  Fumio Ueno ,  Akihiro Horiguchi ,  Hiroshi Inoue

发明人： Mituo Kasori ,  Kazuo Shinozaki ,  Kazuo Anzai ,  Akihiko Tsuge ,  Hiroshi Imagawa ,  Takeshi Takano ,  Fumio Ueno ,  Akihiro Horiguchi ,  Hiroshi Inoue

IPC分类号： C04B35/58 ,  C04B35/581

CPC分类号： C04B35/581

摘要： There are disclosed an aluminum sintered body comprising(a) aluminum nitride,(b) at least one compound selected from the group consisting of an aluminum compound of a rare earth metal, an aluminum compound of an alkaline earth metal, and an aluminum compound of a rare earth metal and an alkaline earth metal, and(c) at least one element selected from the transition elements consisting of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one compound containing said element,and a process for preparing the same comprising mixing aluminum nitride with(i) at least one of compound selected from the group consisting of a rare earth metal and/or an alkaline earth metal; and(ii) at least one of element selected from the group consisting of a transition element of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one of a compound containing said element;and then molding and sintering the mixture.

摘要翻译： 公开了一种铝烧结体，其包含（a）氮化铝，（b）至少一种选自稀土金属的铝化合物，碱土金属的铝化合物和铝化合物的化合物 稀土金属和碱土金属，和（c）选自元素周期表第Ⅳa，Ⅴa，Ⅵa，Ⅶa和Ⅷ族的过渡元素中的至少一种元素，和/或含有所述元素的至少一种化合物 和其制备方法包括将氮化铝与（i）选自稀土金属和/或碱土金属的化合物中的至少一种化合物混合; 和（ii）选自元素周期表第Ⅳa，Ⅴa，Ⅵa，Ⅶa和Ⅷ族的过渡元素的元素中的至少一种，和/或含有所述元素的化合物中的至少一种; 然后成型和烧结混合物。

公开(公告)号：US5994843A

公开(公告)日：1999-11-30

申请号：US723194

申请日：1996-09-27

申请人： Shozo Kataoka ,  Fumio Ueno ,  Ikko Harada ,  Noriaki Hara ,  Ichirou Oota

发明人： Shozo Kataoka ,  Fumio Ueno ,  Ikko Harada ,  Noriaki Hara ,  Ichirou Oota

IPC分类号： H05B41/24 ,  H05B41/28 ,  H05B41/282 ,  H05B41/295 ,  H05B37/02

CPC分类号： H05B41/295 ,  H05B41/28 ,  H05B41/2825 ,  Y10S315/07

摘要： A light source power supply circuit includes a DC power source and an energy accumulating capacitor connected in parallel through a charging switching element to the DC power source. A polarity inverting circuit is connected across the energy accumulating capacitor for applying the capacitor voltage across a light source with the polarity alternately inverted. A starting high voltage generating circuit applies a high voltage to the light source a high voltage for starting the light source. A control circuit controls a polarity inverting circuit so that the inverting frequency is above a critical fusion frequency for the light source.

摘要翻译： 光源电源电路包括直流电源和通过充电开关元件并联连接到直流电源的蓄能电容器。 极性反转电路连接在能量积蓄电容器两端，用于将电容器电压跨越具有极性交替反转的光源。 启动高电压发生电路向光源施加高电压以启动光源。 控制电路控制极性反转电路，使得反相频率高于光源的临界融合频率。

公开(公告)号：US5641718A

公开(公告)日：1997-06-24

申请号：US521475

申请日：1995-08-30

申请人： Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi ,  Mitsuo Kasori ,  Hiroyasu Sumino ,  Fumio Ueno ,  Jun Monma ,  Kazuo Kimura

发明人： Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi ,  Mitsuo Kasori ,  Hiroyasu Sumino ,  Fumio Ueno ,  Jun Monma ,  Kazuo Kimura

IPC分类号： C04B35/581 ,  C04B41/51 ,  C04B41/88 ,  H01L23/15 ,  H05K1/03 ,  C04B35/58 ,  C04B35/03 ,  B32B7/00

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5133 ,  C04B41/88 ,  H01L23/15 ,  C04B2111/00844 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152 ,  Y10T428/24926

摘要： Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

摘要翻译： 公开了一种用于半导体器件的烧结氮化铝组合物和电路基板。 烧结的氮化铝组合物包括：氮化铝; 由含有选自元素周期表的碱土元素和IIIa族元素的元素的化合物给出的第一组分; 由简单硅或含硅化合物制成的第二组分; 以及由简单的锰或含锰化合物制成的第三组分。 电路基板具有由上述烧结氮化铝组合物构成的绝缘层和包含导电材料的导电层和与绝缘层相同的部件。

公开(公告)号：US5500395A

公开(公告)日：1996-03-19

申请号：US320758

申请日：1994-10-11

申请人： Fumio Ueno ,  Mitsuo Kasori ,  Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi

发明人： Fumio Ueno ,  Mitsuo Kasori ,  Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi

IPC分类号： C04B35/581 ,  H01B3/12 ,  H01L23/15

CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/24917

摘要： Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.

摘要翻译： 公开了一种具有高导热性和高强度的氮化铝烧结体，其可以通过低温，短时间烧结制造。 该氮化铝烧结体的氮化铝粒子的平均粒径为2μm以下，导热率为80W / m·K以上，相对密度为98％以上。

公开(公告)号：US5373129A

公开(公告)日：1994-12-13

申请号：US28284

申请日：1993-03-09

申请人： Naoki Shutoh ,  Motomasa Imai ,  Fumio Ueno

发明人： Naoki Shutoh ,  Motomasa Imai ,  Fumio Ueno

IPC分类号： H01C7/10 ,  H01H33/16

CPC分类号： H01C7/10 ,  H01H33/165

摘要： A compact power circuit breaker having a large breaking capacity and stable breaking performance by using a compact closing resistor unit having high performance. The power circuit breaker includes a main switch arranged in a current path, an auxiliary switch connected to the current path parallel with respect to the main switch and turned on prior to an ON state of the main switch, and a closing resistor unit connected in series with the auxiliary switch and incorporated with a resistor having a sintered body consisting of a Zn--Ti--Co--O--based oxide and having metal components consisting of titanium calculated as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol %, cobalt calculated as cobalt oxide (CoO) in an amount of 0.5 to 30 mol %, and Zn as substantially the balance.

摘要翻译： 通过使用具有高性能的紧凑型闭合电阻器单元，具有大的分断能力和稳定的断开性能的紧凑型电力断路器。 电源断路器包括布置在电流路径中的主开关，辅助开关连接到电流路径，相对于主开关并联并在主开关的导通状态之前导通，以及闭合电阻器单元串联连接 与辅助开关一起并入具有由Zn-Ti-Co-O系氧化物构成的烧结体的电阻体，并具有以氧化钛（TiO 2）计为0.5〜25摩尔％的由钛构成的金属成分， 作为氧化钴（CoO）计算的钴的量为0.5〜30摩尔％，Zn为大致余量。

公开(公告)号：US5286927A

公开(公告)日：1994-02-15

申请号：US959618

申请日：1992-10-13

申请人： Fumio Ueno ,  Mitsuo Kasori ,  Yoshiko Goto ,  Akihiro Horiguchi

发明人： Fumio Ueno ,  Mitsuo Kasori ,  Yoshiko Goto ,  Akihiro Horiguchi

IPC分类号： C23C16/18 ,  C23C30/00 ,  H05K1/03 ,  H05K1/09 ,  H05K3/00 ,  H05K3/10 ,  H05K3/12 ,  H05K01/00

CPC分类号： H05K3/1258 ,  H01L24/48 ,  H05K1/092 ,  H05K3/12 ,  H01L2224/1147 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/351 ,  H05K1/0306 ,  H05K2201/09036 ,  H05K2203/0568 ,  H05K3/0023 ,  H05K3/10 ,  H05K3/107 ,  Y10T29/49155 ,  Y10T29/49158

摘要： Disclosed is a method of manufacturing a circuit board comprising an insulating substrate and a conductor pattern of a low resistivity which can be prevented from being peeled off the substrate by a thermal stress. The method comprises the step of forming an insulating layer on an insulating substrate, the insulating layer being provided with a groove having a depth of at least 20 .mu.m and shaped like a conductor pattern which is to be formed later, the step of filling the groove of the insulating layer with a paste composition consisting of a powdery material capable of forming an electrically conductive metal, a fine particles having a thermal expansion coefficient smaller than that of the electrically conductive metal, the fine particles being used in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal, and an organic binder, and the step of baking the paste composition so as to form a conductor pattern on the insulating substrate, the conductor pattern containing as a main component the electrically conductive metal and the fine particles having a thermal expansion coefficient smaller than that of the metal, the fine particles being dispersed in the electrically conductive metal in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal.

摘要翻译： 公开了一种制造电路板的方法，该电路板包括绝缘基板和具有低电阻率的导体图案，其可以防止被热应力从基板上剥离。 该方法包括在绝缘基板上形成绝缘层的步骤，绝缘层设置有深度至少为20（μm）的凹槽，并形成为稍后形成的导体图案，步骤 用能够形成导电金属的粉末材料组成的糊料组合物，具有比导电金属的热膨胀系数小的热膨胀系数的微粒填充绝缘层的槽，该微粒的用量为 相对于导电性金属的量为0.5〜20体积％的有机粘合剂，以及在该绝缘性基材上形成导体图案的烧成糊剂组合物的步骤，以主要成分为主成分的导体图案 导电性金属和热膨胀系数小于金属的微细粒子，微细散布在电极中 相对于导电金属的量，导电金属的导电量为0.5〜20体积％。

公开(公告)号：US4770953A

公开(公告)日：1988-09-13

申请号：US16557

申请日：1987-02-19

申请人： Akihiro Horiguchi ,  Mituo Kasori ,  Fumio Ueno ,  Hideki Sato ,  Nobuyuki Mizunoya ,  Mitsuyoshi Endo ,  Shun-ichiro Tanaka ,  Kazuo Shinozaki

发明人： Akihiro Horiguchi ,  Mituo Kasori ,  Fumio Ueno ,  Hideki Sato ,  Nobuyuki Mizunoya ,  Mitsuyoshi Endo ,  Shun-ichiro Tanaka ,  Kazuo Shinozaki

IPC分类号： C04B41/50 ,  C04B41/51 ,  C04B41/87 ,  C04B41/88 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498 ,  H05K1/09 ,  B32B9/00 ,  C04B35/58

CPC分类号： C04B41/87 ,  C04B41/5053 ,  C04B41/51 ,  C04B41/5133 ,  C04B41/88 ,  H01L21/4846 ,  H01L23/15 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K1/092 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： For higher thermal conductivity, stronger adhesion strength, excellent insulating characteristics, and multilayer interconnection, an aluminium sintered body for circuit substrates comprises a novel conductive metallized layer on the surface of the sintered body. The metallized layer comprises at least one element selected from the first group of Mo, W and Ta and at least one element selected from the second group of IIa, III, IVa group elements, lanthanide elements, and actinide elements in the periodic table, as the conductive phase element. The first group element serves to improve the heat conductivity and resistance, while the second group serves to increase the wetness and adhesion strength between the insulating body and the metallized layer. Further, the plural insulating ceramic bodies and the plural metallized conductive layers can be sintered simultaneously being stacked one above the other to permit a multilayer interconnection.

摘要翻译： 为了更高的导热性，更强的粘合强度，优异的绝缘特性和多层互连，用于电路基板的铝烧结体包括在烧结体表面上的新的导电金属化层。 金属化层包括选自Mo，W和Ta的第一组中的至少一种元素和选自元素周期表中第二组IIa，III，IVa族元素，镧系元素和锕系元素中的至少一种元素，如 导电相元件。 第一组元件用于提高导热性和电阻，而第二组用于增加绝缘体和金属化层之间的湿度和粘合强度。 此外，多个绝缘陶瓷体和多个金属化导电层可以同时被烧结而彼此层叠以允许多层互连。

公开(公告)号：US6107638A

公开(公告)日：2000-08-22

申请号：US42453

申请日：1998-03-16

申请人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

发明人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

IPC分类号： H01L21/20 ,  H01L23/15 ,  H01L23/373 ,  H05K3/38 ,  H01L29/12

CPC分类号： H01L23/15 ,  C04B35/593 ,  C04B37/025 ,  C04B37/026 ,  C04B41/009 ,  C04B41/52 ,  C04B41/90 ,  H01L21/2007 ,  H01L23/3735 ,  H05K3/38 ,  C04B2111/00405 ,  C04B2111/00844 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3409 ,  C04B2235/3865 ,  C04B2235/3878 ,  C04B2235/3895 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/6565 ,  C04B2235/6584 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/068 ,  C04B2237/08 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/36 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/405 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/408 ,  C04B2237/52 ,  C04B2237/54 ,  C04B2237/562 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/74 ,  C04B2237/86 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/3025

摘要： Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.

摘要翻译： 公开了一种氮化硅电路基板及其制造方法及其半导体器件。 电路基板包括：氮化硅衬底; 金属电路板; 以及介于氮化硅板和用于接合氮化硅衬底和金属电路板的金属电路板之间并具有含有氧化铝组分的化合物的中间层。 中间层中的氧化铝组分的浓度在金属电路板的侧面比在氮化硅板侧更高。