Interconnection elements with encased interconnects
    8.
    发明授权
    Interconnection elements with encased interconnects 有权
    具有封装互连的互连元件

    公开(公告)号:US08988895B2

    公开(公告)日:2015-03-24

    申请号:US13215725

    申请日:2011-08-23

    摘要: An interconnection element is disclosed that includes a plurality of drawn metal conductors, a dielectric layer, and opposed surfaces having a plurality of wettable contacts thereon. The conductors may include grains having lengths oriented in a direction between the first and second ends of the conductors. A dielectric layer for insulating the conductors may have first and second opposed surfaces and a thickness less than 1 millimeter between the first and second surface. One or more conductors may be configured to carry a signal to or from a microelectronic element. First and second wettable contacts may be used to bond the interconnection element to at least one of a microelectronic element and a circuit panel. The wettable contacts may match a spatial distribution of element contacts at a face of a microelectronic element or of circuit contacts exposed at a face of component other than the microelectronic element.

    摘要翻译: 公开了一种互连元件,其包括多个拉制的金属导体,电介质层和在其上具有多个可湿接触点的相对表面。 导体可以包括具有沿导体的第一和第二端之间的方向定向的长度的晶粒。 用于绝缘导体的电介质层可以具有第一和第二相对表面,并且在第一和第二表面之间可以具有小于1毫米的厚度。 一个或多个导体可以被配置为将信号传送到微电子元件或从微电子元件传送信号。 可以使用第一和第二可湿触点将互连元件接合到微电子元件和电路板中的至少一个。 可湿性触点可以匹配微电子元件的表面处的元件触点的空间分布或暴露在微电子元件以外的部件的表面处的电路触点。

    BSI image sensor package with variable-height silicon for even reception of different wavelengths
    9.
    发明授权
    BSI image sensor package with variable-height silicon for even reception of different wavelengths 有权
    BSI图像传感器封装,具有可变高度的硅,用于均匀接收不同的波长

    公开(公告)号:US08937361B2

    公开(公告)日:2015-01-20

    申请号:US13114243

    申请日:2011-05-24

    IPC分类号: H01L31/0232 H01L27/146

    摘要: A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face such that the first and second light sensing elements receive light of substantially the same intensity. A dielectric region is provided at least substantially filling a space of the semiconductor region adjacent at least one of the light sensing elements. The dielectric region may include at least one light guide.

    摘要翻译: 提供了一种用于背面照明的微电子图像传感器组件及其制造方法。 该组件包括具有在正面暴露的触点的微电子元件和被布置成通过后表面接收不同波长的光的光感测元件。 半导体区域在第一光感测元件和后表面之间具有第一厚度,并且在第二光感测元件和后表面之间具有第二厚度,使得第一和第二光感测元件接收基本上相同强度的光。 提供至少基本上填充与至少一个光感测元件相邻的半导体区域的空间的电介质区域。 电介质区域可以包括至少一个光导。