On-chip RF shields with through substrate conductors
    3.
    发明授权
    On-chip RF shields with through substrate conductors 有权
    片上RF屏蔽通过基板导体

    公开(公告)号:US08169059B2

    公开(公告)日:2012-05-01

    申请号:US12242521

    申请日:2008-09-30

    IPC分类号: H01L23/552

    摘要: Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, the system on a chip includes an RF component disposed on a first part of a substrate, a semiconductor component disposed on a second part of the substrate, the semiconductor component and the RF component sharing a common boundary. The system on chip further includes through substrate conductors disposed in the substrate, the through substrate conductors coupled to a ground potential node, the through substrate conductors disposed around the RF component forming a fence around the RF circuit.

    摘要翻译: 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中,芯片上的系统包括设置在基板的第一部分上的RF部件,设置在基板的第二部分上的半导体部件,共享公共边界的半导体部件和RF部件。 芯片上的系统还包括通过设置在基板中的基板导体,连接到地电位节点的贯穿基板导体,围绕RF元件设置的贯穿基板导体,围绕RF电路形成围栏。

    On-Chip RF Shields with Backside Redistribution Lines
    6.
    发明申请
    On-Chip RF Shields with Backside Redistribution Lines 有权
    带背面再分配线的片上RF屏蔽

    公开(公告)号:US20100078776A1

    公开(公告)日:2010-04-01

    申请号:US12242487

    申请日:2008-09-30

    IPC分类号: H01L23/552 H01L21/44

    摘要: Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.

    摘要翻译: 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中,一种制造片上系统的方法包括从衬底的背面形成穿透衬底开口,穿过衬底开口设置在第一和第二区域之间,第一区域包括用于RF电路的装置,第二区域包括第二 区域包括用于其他电路的装置。 该方法还包括在光致抗蚀剂层上形成用于再分配线的图案,设置在背面下方的光致抗蚀剂层,以及用导电材料填充贯通基板开口和再分配线图案。