公开(公告)号：US11842975B2

公开(公告)日：2023-12-12

申请号：US16679883

申请日：2019-11-11

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

IPC: H01L29/43 ,  H01L23/00 ,  H01L29/45 ,  H01L23/495 ,  H01L23/482

CPC classification number: H01L24/32 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L29/43 ,  H01L29/45 ,  H01L2224/0345 ,  H01L2224/03438 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/08503 ,  H01L2224/2745 ,  H01L2224/291 ,  H01L2224/29082 ,  H01L2224/29084 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29184 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/8346 ,  H01L2224/83191 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0132 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01048 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/1776 ,  H01L2924/17738 ,  H01L2924/17747 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05171 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01074 ,  H01L2224/05184 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2224/29111 ,  H01L2924/00014 ,  H01L2224/29118 ,  H01L2924/00014 ,  H01L2224/29109 ,  H01L2924/00014 ,  H01L2224/29105 ,  H01L2924/00014 ,  H01L2224/29113 ,  H01L2924/00014 ,  H01L2224/291 ,  H01L2924/01048 ,  H01L2224/83447 ,  H01L2924/00014 ,  H01L2224/8346 ,  H01L2924/00014 ,  H01L2224/83444 ,  H01L2924/00014 ,  H01L2224/83439 ,  H01L2924/00014 ,  H01L2224/83464 ,  H01L2924/00014 ,  H01L2224/83469 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/01023 ,  H01L2224/05655 ,  H01L2924/01015 ,  H01L2224/83455 ,  H01L2924/01023 ,  H01L2224/83455 ,  H01L2924/01015 ,  H01L2224/29139 ,  H01L2924/00014 ,  H01L2224/29144 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/00 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/1305 ,  H01L2924/00

Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

公开(公告)号：US20200075530A1

公开(公告)日：2020-03-05

申请号：US16679883

申请日：2019-11-11

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

IPC: H01L23/00 ,  H01L23/495 ,  H01L23/482 ,  H01L29/43 ,  H01L29/45

Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

公开(公告)号：US10475761B2

公开(公告)日：2019-11-12

申请号：US16126190

申请日：2018-09-10

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

IPC: H01L29/45 ,  H01L29/43 ,  H01L23/482 ,  H01L23/495 ,  H01L23/00

Abstract: A method for producing an electric device with a multi-layer contact is disclosed. In an embodiment, a method includes providing a carrier, the carrier having a metallic layer disposed on its surface, providing a semiconductor substrate, forming a layer stack on the semiconductor substrate and attaching the layer stack of the semiconductor substrate to the metallic layer of the carrier so that an intermetallic phase is formed between the metallic layer and the solder layer.

公开(公告)号：US20190006311A1

公开(公告)日：2019-01-03

申请号：US16126190

申请日：2018-09-10

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

IPC: H01L23/00 ,  H01L29/45 ,  H01L29/43 ,  H01L23/482 ,  H01L23/495

CPC classification number: H01L24/32 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L29/43 ,  H01L29/45 ,  H01L2224/03438 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/08503 ,  H01L2224/2745 ,  H01L2224/29082 ,  H01L2224/29084 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29184 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83191 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83815 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01048 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/17738 ,  H01L2924/17747 ,  H01L2924/1776 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01015 ,  H01L2924/00

Abstract: A method for producing an electric device with a multi-layer contact is disclosed. In an embodiment, a method includes providing a carrier, the carrier having a metallic layer disposed on its surface, providing a semiconductor substrate, forming a layer stack on the semiconductor substrate and attaching the layer stack of the semiconductor substrate to the metallic layer of the carrier so that an intermetallic phase is formed between the metallic layer and the solder layer.

公开(公告)号：US20170025375A1

公开(公告)日：2017-01-26

申请号：US15282927

申请日：2016-09-30

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L24/32 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L29/43 ,  H01L29/45 ,  H01L2224/03438 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/08503 ,  H01L2224/2745 ,  H01L2224/29082 ,  H01L2224/29084 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29184 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83191 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83815 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01048 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/17738 ,  H01L2924/17747 ,  H01L2924/1776 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01015 ,  H01L2924/00

Abstract: An electric device with a multi-layer contact is disclosed. In an embodiment, the electronic device includes a carrier, a semiconductor substrate attached to the carrier, and a layer system disposed between the semiconductor substrate and the carrier. The layer system includes an electrical contact layer disposed on the semiconductor substrate. A functional layer is disposed on the electrical contact layer. An adhesion layer is disposed on the functional layer. A solder layer is disposed between the adhesion layer and the carrier.

Abstract translation: 公开了具有多层接触的电气设备。 在一个实施例中，电子设备包括载体，连接到载体的半导体衬底以及设置在半导体衬底和载体之间的层系统。 层系统包括设置在半导体衬底上的电接触层。 功能层设置在电接触层上。 粘附层设置在功能层上。 在粘合层和载体之间设置焊料层。

公开(公告)号：US20140174652A1

公开(公告)日：2014-06-26

申请号：US13722834

申请日：2012-12-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Horst Groeninger ,  Konrad Roesl

IPC: B25J15/06

CPC classification number: B25J15/0616 ,  H01L21/67132 ,  H01L21/6838 ,  Y10T29/494

Abstract: A self-aligning pick-up head, a method to manufacture a pick-up head and a method of manufacturing a device are disclosed. In one embodiment a pick-up head includes a nozzle having a first end portion and a second end portion and a base tool comprising a collet head, wherein the first end portion of the nozzle is gimbaled to the base tool.

Abstract translation: 公开了一种自动调心拾取头，制造拾取头的方法和制造装置的方法。 在一个实施例中，拾取头包括具有第一端部部分和第二端部部分的喷嘴以及包括夹头的基部工具，其中喷嘴的第一端部被平衡到基部工具。

公开(公告)号：US12255168B2

公开(公告)日：2025-03-18

申请号：US18509357

申请日：2023-11-15

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

IPC: H01L29/43 ,  H01L23/00 ,  H01L23/482 ,  H01L23/495 ,  H01L29/45

Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

公开(公告)号：US09079318B2

公开(公告)日：2015-07-14

申请号：US13722834

申请日：2012-12-20

Applicant: Infineon Technologies AG

Inventor： Horst Groeninger ,  Konrad Roesl

IPC: A47J45/00 ,  B25J15/06 ,  H01L21/67 ,  H01L21/683

CPC classification number: B25J15/0616 ,  H01L21/67132 ,  H01L21/6838 ,  Y10T29/494

Abstract: A self-aligning pick-up head, a method to manufacture a pick-up head and a method of manufacturing a device are disclosed. In one embodiment a pick-up head includes a nozzle having a first end portion and a second end portion and a base tool comprising a collet head, wherein the first end portion of the nozzle is gimbaled to the base tool.

Abstract translation: 公开了一种自动调心拾取头，制造拾取头的方法和制造装置的方法。 在一个实施例中，拾取头包括具有第一端部部分和第二端部部分的喷嘴以及包括夹头的基部工具，其中喷嘴的第一端部被平衡到基部工具。

公开(公告)号：US09673170B2

公开(公告)日：2017-06-06

申请号：US14451868

申请日：2014-08-05

Applicant: Infineon Technologies AG

Inventor： Rupert Fischer ,  Peter Strobel ,  Joachim Mahler ,  Konrad Roesl ,  Alexander Heinrich

IPC: H01L21/68 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H01L21/683 ,  H01L23/495 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L24/97 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/49575 ,  H01L24/83 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/04026 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40227 ,  H01L2224/40247 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/83851 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/95091 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/84 ,  H01L2224/27 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2924/00

Abstract: Methods for connecting chips to a chip carrier are disclosed. In some embodiments the method for connecting a plurality of chips to a chip carrier includes placing first chips on a transfer carrier, placing second chips on the transfer carrier, placing the transfer carrier with the first and second chips on the chip carrier and forming connections between the first chips and the chip carrier and the second chips and the chip carrier.

公开(公告)号：US20140329361A1

公开(公告)日：2014-11-06

申请号：US14335660

申请日：2014-07-18

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Konrad Roesl ,  Oliver Eichinger

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L23/3107 ,  H01L23/49513 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/93 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/27426 ,  H01L2224/2745 ,  H01L2224/29018 ,  H01L2224/29019 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/8381 ,  H01L2224/83898 ,  H01L2224/83906 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/01023 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2224/27 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 μm. The semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. The semiconductor chip is pressed on the carrier with a pressure of at least 1 Newton per mm2 of surface area of the first main surface and heat is applied to the solder material.

Abstract translation: 一种方法包括提供具有沉积在第一主表面上的第一主表面和焊料层的半导体芯片，其中焊料层的粗糙度至少为1μm。 将半导体芯片放置在载体上，半导体芯片的第一主表面面向载体。 将半导体芯片按第一主表面的表面积至少为1牛顿/千克的压力压在载体上，并将热量施加到焊料材料上。