EMBEDDED BRIDGE ARCHITECTURE WITH THINNED SURFACE

    公开(公告)号:US20220310518A1

    公开(公告)日:2022-09-29

    申请号:US17213147

    申请日:2021-03-25

    申请人: Intel Corporation

    摘要: Embodiments disclosed herein include a multi-die packages with an embedded bridge and a thinned surface. In an example, a multi-die interconnect structure includes a package substrate having a cavity. A bridge die is in the cavity of the package substrate, the bridge die including silicon. A dielectric material is over the package substrate, over the bridge die, and in the cavity. A plurality of conductive bond pads is on the dielectric material. The multi-die interconnect structure further includes a plurality of conductive pillars, individual ones of the plurality of conductive pillars on a corresponding one of the plurality of conductive bond pads. A solder resist material is on the dielectric material, on exposed portions of the plurality of conductive bond pads, and laterally surrounding the plurality of conductive pillars. The plurality of conductive pillars has a top surface above a top surface of the solder resist material.

    OPTIMAL SIGNAL ROUTING PERFORMANCE THROUGH DIELECTRIC MATERIAL CONFIGURATION DESIGNS IN PACKAGE SUBSTRATE

    公开(公告)号:US20200343175A1

    公开(公告)日:2020-10-29

    申请号:US16392171

    申请日:2019-04-23

    申请人: Intel Corporation

    摘要: Embodiments include package substrates and methods of forming the package substrates. A package substrate includes a first conductive layer in a first dielectric, a second dielectric over the first dielectric, and a second conductive layer in the second dielectric, where the second conductive layer includes first and second traces. The package substrate also includes a third conductive layer over the second dielectric, and a high dielectric constant (Dk) and low DK regions in the first and second dielectrics, where the high Dk region surrounds the first traces, and where the low Dk region surrounds the second traces. The high Dk region may be between the first and third conductive layers. The low Dk region may be between the first and third conductive layers. The package substrate may include a dielectric region in the first and second dielectrics, where the dielectric region separates the high Dk and low Dk regions.