公开(公告)号：US20230207503A1

公开(公告)日：2023-06-29

申请号：US17561824

申请日：2021-12-24

Applicant: Intel Corporation

Inventor： Jieying KONG ,  Bainye Francoise ANGOUA ,  Dilan SENEVIRATNE ,  Whitney M. BRYKS ,  Jeremy D. ECTON

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/34 ,  H01L2224/73265 ,  H01L2924/186 ,  H01L2924/01029

Abstract: A system includes a metallic contact integrated onto a semiconductor integrated circuit substrate. The metallic contact has a contact surface to make electrical contact with a trace through a dielectric layer over the semiconductor circuit substrate and the metallic contact. The semiconductor circuit can include a trace that connects the contact to a package pad to enable external access to the signal from off the semiconductor circuit. The metallic contact includes a vertical lip extending vertically into the dielectric layer above the contact surface.

公开(公告)号：US20230090863A1

公开(公告)日：2023-03-23

申请号：US17482384

申请日：2021-09-22

Applicant: Intel Corporation

Inventor： Dilan SENEVIRATNE ,  Whitney BRYKS ,  Ala OMER ,  Jieying KONG ,  Sarah BLYTHE ,  Bainye Francoise ANGOUA

IPC: G02B6/42 ,  G02B6/12

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques directed to dense integration of PICs in a substrate using an optical fanout structure that includes waveguides formed within a substrate to optically couple with the PICs at an edge of the substrate. One or more PICs may then be electrically with dies such as processor dies or memory dies. The one or more PICs may be located within a cavity in the substrate. The substrate may be made of glass or silicon. Other embodiments may be described and/or claimed.

公开(公告)号：US20210078296A1

公开(公告)日：2021-03-18

申请号：US16574252

申请日：2019-09-18

Applicant: Intel Corporation

Inventor： Jieying KONG ,  Gang DUAN ,  Srinivas PIETAMBARAM ,  Patrick QUACH ,  Dilan SENEVIRATNE

IPC: B32B17/10 ,  B32B15/20 ,  H01L23/48 ,  H01L23/00

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatus, and/or processes directed to a manufacturing process flow for packages that include one or more glass layers that include patterning features, such as electrically conductive traces, RDLs, and vias within the packages. In embodiments, a package may include a glass layer with a first side and a second side opposite the first side, where the glass layer is a dielectric layer. The package may include another layer coupled with the first side of the glass layer, and a pattern on the second side of the glass layer to receive a deposited material in at least a portion of the pattern.

公开(公告)号：US20250112140A1

公开(公告)日：2025-04-03

申请号：US18374609

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Rahul BHURE ,  Mitchell PAGE ,  Joseph PEOPLES ,  Jieying KONG ,  Nicholas S. HAEHN ,  Astitva TRIPATHI ,  Bainye Francoise ANGOUA ,  Yosef KORNBLUTH ,  Daniel ROSALES-YEOMANS ,  Joshua STACEY ,  Aaditya Anand CANDADAI ,  Yonggang Yong LI ,  Tchefor NDUKUM ,  Scott COATNEY ,  Gang DUAN ,  Jesse JONES ,  Srinivas Venkata Ramanuja PIETAMBARAM ,  Dilan SENEVIRATNE ,  Matthew ANDERSON

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/15

Abstract: Embodiments disclosed herein include package substrates with a glass core. In an embodiment, an apparatus comprises a core with a first width, and the core comprises a glass layer. In an embodiment, a via is provided through a thickness of the core, where the via is electrically conductive. In an embodiment, a first layer is provided over the core, where the first layer comprises a second width that is smaller than the first width. In an embodiment, a second layer is provided under the core, where the second layer comprises a third width that is smaller than the first width.

公开(公告)号：US20240217216A1

公开(公告)日：2024-07-04

申请号：US18091028

申请日：2022-12-29

Applicant: INTEL CORPORATION

Inventor： Kristof DARMAWIKARTA ,  Tarek A. IBRAHIM ,  Srinivas V. PIETAMBARAM ,  Dilan SENEVIRATNE ,  Jieying KONG ,  Thomas HEATON ,  Whitney BRYKS ,  Vinith BEJUGAM ,  Junxin WANG ,  Gang DUAN

IPC: B32B17/10 ,  B32B7/12 ,  B32B17/02 ,  B65D85/48

CPC classification number: B32B17/10642 ,  B32B7/12 ,  B32B17/02 ,  B65D85/48 ,  B32B2260/04 ,  B32B2307/202 ,  B32B2457/00

Abstract: Embodiments disclosed herein include package substrates with glass stiffeners. In an embodiment, the package substrate comprises a first layer, where the first layer comprises glass. In an embodiment, the package substrate comprises a second layer over the first layer, where the second layer is a buildup film. In an embodiment, the package substrate further comprises an electrically conductive interconnect structure through the first layer and the second layer.

公开(公告)号：US20200343175A1

公开(公告)日：2020-10-29

申请号：US16392171

申请日：2019-04-23

Applicant: Intel Corporation

Inventor： Zhiguo QIAN ,  Gang DUAN ,  Kemal AYGÜN ,  Jieying KONG

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/66

Abstract: Embodiments include package substrates and methods of forming the package substrates. A package substrate includes a first conductive layer in a first dielectric, a second dielectric over the first dielectric, and a second conductive layer in the second dielectric, where the second conductive layer includes first and second traces. The package substrate also includes a third conductive layer over the second dielectric, and a high dielectric constant (Dk) and low DK regions in the first and second dielectrics, where the high Dk region surrounds the first traces, and where the low Dk region surrounds the second traces. The high Dk region may be between the first and third conductive layers. The low Dk region may be between the first and third conductive layers. The package substrate may include a dielectric region in the first and second dielectrics, where the dielectric region separates the high Dk and low Dk regions.

公开(公告)号：US20250112136A1

公开(公告)日：2025-04-03

申请号：US18374937

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Bohan SHAN ,  Jesse JONES ,  Zhixin XIE ,  Bai NIE ,  Shaojiang CHEN ,  Joshua STACEY ,  Mitchell PAGE ,  Brandon C. MARIN ,  Jeremy D. ECTON ,  Nicholas S. HAEHN ,  Astitva TRIPATHI ,  Yuqin LI ,  Edvin CETEGEN ,  Jason M. GAMBA ,  Jacob VEHONSKY ,  Jianyong MO ,  Makoyi WATSON ,  Shripad GOKHALE ,  Mine KAYA ,  Kartik SRINIVASAN ,  Haobo CHEN ,  Ziyin LIN ,  Kyle ARRINGTON ,  Jose WAIMIN ,  Ryan CARRAZZONE ,  Hongxia FENG ,  Srinivas Venkata Ramanuja PIETAMBARAM ,  Gang DUAN ,  Dingying David XU ,  Hiroki TANAKA ,  Ashay DANI ,  Praveen SREERAMAGIRI ,  Yi LI ,  Ibrahim EL KHATIB ,  Aaron GARELICK ,  Robin MCREE ,  Hassan AJAMI ,  Yekan WANG ,  Andrew JIMENEZ ,  Jung Kyu HAN ,  Hanyu SONG ,  Yonggang Yong LI ,  Mahdi MOHAMMADIGHALENI ,  Whitney BRYKS ,  Shuqi LAI ,  Jieying KONG ,  Thomas HEATON ,  Dilan SENEVIRATNE ,  Yiqun BAI ,  Bin MU ,  Mohit GUPTA ,  Xiaoying GUO

IPC: H01L23/498 ,  H01L23/15

Abstract: Embodiments disclosed herein include apparatuses with glass core package substrates. In an embodiment, an apparatus comprises a substrate with a first surface and a second surface opposite from the first surface. A sidewall is between the first surface and the second surface, and the substrate comprises a glass layer. In an embodiment, a via is provided through the substrate between the first surface and the second surface, and the via is electrically conductive. In an embodiment, a layer in contact with the sidewall of the substrate surrounds a perimeter of the substrate.

公开(公告)号：US20230420348A1

公开(公告)日：2023-12-28

申请号：US17852039

申请日：2022-06-28

Applicant: Intel Corporation

Inventor： Jieying KONG ,  Whitney BRYKS ,  Dilan SENEVIRATNE ,  Suddhasattwa NAD ,  Srinivas V. PIETAMBARAM

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L23/49894 ,  H01L21/4857 ,  H01L2224/16225 ,  H01L24/16

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first layer, where the first layer is a dielectric material, and a trace on the first layer. In an embodiment, a pad is on the first layer, and a liner is over the first layer, the trace, and the pad, where a hole is provided through the liner. In an embodiment, the electronic package further comprises a second layer over the first layer, the trace, the pad, and the liner.

公开(公告)号：US20230098501A1

公开(公告)日：2023-03-30

申请号：US17485375

申请日：2021-09-25

Applicant: Intel Corporation

Inventor： Sarah BLYTHE ,  Jieying KONG ,  Peumie ABEYRATNE KURAGAMA ,  Hongxia FENG

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/532

Abstract: A system includes a metallic contact integrated onto a semiconductor integrated circuit substrate with a stress buffer dielectric between the contact and the bulk dielectric. The bulk dielectric typically covers an integrated circuit metal layer to provide electrical isolation of the circuitry. The semiconductor circuit can include a trace that connects the contact to a package pad to enable external access to the signal from off the semiconductor circuit. The stress buffer dielectric has higher elongation and lower filler loading relative to the bulk dielectric, which makes the stress buffer more pliable. The stress buffer is disposed between the contact and the bulk dielectric to improve stress response, reducing the possibility of delamination of the contact from the bulk dielectric.

公开(公告)号：US20230090188A1

公开(公告)日：2023-03-23

申请号：US17481001

申请日：2021-09-21

Applicant: Intel Corporation

Inventor： Junxin WANG ,  Kemal AYGUN ,  Jieying KONG ,  Ala OMER ,  Whitney M. BRYKS

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/538

Abstract: An apparatus is described. The apparatus includes a semiconductor chip package substrate having alternating metal and dielectric layers. First and second ones of the dielectric layers that are directly above and directly below a first of the metal layers that is patterned to have supply and/or reference voltage structures have respectively higher dielectric constant (Dk) and higher dissipation factor (Df) than third and fourth ones of the dielectric layers that are directly above and directly below a second of the metal layers that is patterned to have signal wires that are to transport signals having a pulse width of 1 ns or less.