专利检索 ap:("Kinya Nakatsu" OR "Hideki Miyazaki" OR "Yoshitaka Takezawa" OR "Toshiaki Ishii" OR "Hiroshi Hozoji") AND inv:"Hiroshi Hozoji" 第 1 页

1.

发明授权
Semiconductor unit, and power conversion system and on-vehicle electrical system using the same 有权
标题翻译：半导体单元和电力转换系统以及使用该系统的车载电气系统

公开(公告)号：US07816786B2

公开(公告)日：2010-10-19

申请号：US12389811

申请日：2009-02-20

申请人： Kinya Nakatsu , Hideki Miyazaki , Yoshitaka Takezawa , Toshiaki Ishii , Hiroshi Hozoji

发明人： Kinya Nakatsu , Hideki Miyazaki , Yoshitaka Takezawa , Toshiaki Ishii , Hiroshi Hozoji

IPC分类号： H01L23/34

CPC分类号： H01L23/3675 , F28F3/12 , H01L23/473 , H01L24/33 , H01L24/73 , H01L25/071 , H01L25/072 , H01L2224/291 , H01L2224/32245 , H01L2224/33 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/014

摘要： A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.

摘要翻译： 半导体器件包括电连接到半导体芯片的电极的半导体芯片和引线。中空散热器基座容纳用具有电绝缘性的高导热性树脂模制的半导体器件。散热器底座内有一个冷却介质通道，或在外部散热片。或者，散热器基座容纳在第二散热器基座中。

2.

发明授权
Semiconductor unit, and power conversion system and on-vehicle electrical system using the same 有权
标题翻译：半导体单元和电力转换系统以及使用该系统的车载电气系统

公开(公告)号：US07504720B2

公开(公告)日：2009-03-17

申请号：US11505467

申请日：2006-08-17

申请人： Kinya Nakatsu , Hideki Miyazaki , Yoshitaka Takezawa , Toshiaki Ishii , Hiroshi Hozoji

发明人： Kinya Nakatsu , Hideki Miyazaki , Yoshitaka Takezawa , Toshiaki Ishii , Hiroshi Hozoji

IPC分类号： H01L23/34

CPC分类号： H01L23/3675 , F28F3/12 , H01L23/473 , H01L24/33 , H01L24/73 , H01L25/071 , H01L25/072 , H01L2224/291 , H01L2224/32245 , H01L2224/33 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/014

摘要： A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.

摘要翻译： 半导体器件包括电连接到半导体芯片的电极的半导体芯片和引线。中空散热器基座容纳用具有电绝缘性的高导热性树脂模制的半导体器件。散热器底座上有一个冷却介质通道，或在外部散热片。或者，散热器基座容纳在第二散热器基座中。

3.

发明申请
Semiconductor unit, and power conversion system and on-vehicle electrical system using the same 有权
标题翻译：半导体单元和电力转换系统以及使用该系统的车载电气系统

公开(公告)号：US20070096278A1

公开(公告)日：2007-05-03

申请号：US11505467

申请日：2006-08-17

申请人： Kinya Nakatsu , Hideki Miyazaki , Yoshitaka Takezawa , Toshiaki Ishii , Hiroshi Hozoji

发明人： Kinya Nakatsu , Hideki Miyazaki , Yoshitaka Takezawa , Toshiaki Ishii , Hiroshi Hozoji

IPC分类号： H01L23/02

CPC分类号： H01L23/3675 , F28F3/12 , H01L23/473 , H01L24/33 , H01L24/73 , H01L25/071 , H01L25/072 , H01L2224/291 , H01L2224/32245 , H01L2224/33 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/014

摘要： A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.

摘要翻译： 半导体器件包括电连接到半导体芯片的电极的半导体芯片和引线。中空散热器基座容纳用具有电绝缘性的高导热性树脂模制的半导体器件。散热器底座内有一个冷却介质通道，或在外部散热片。或者，散热器基座容纳在第二散热器基座中。

4.

发明申请
Power Semiconductor Unit, Power Module, Power Semiconductor Unit Manufacturing Method, and Power Module Manufacturing Method 有权
标题翻译：功率半导体单元，功率模块，功率半导体单元制造方法和功率模块制造方法

公开(公告)号：US20130119525A1

公开(公告)日：2013-05-16

申请号：US13811722

申请日：2011-07-25

申请人： Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa

发明人： Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa

IPC分类号： H01L23/495 , H01L21/56

CPC分类号： H01L23/49568 , B60L1/003 , B60L3/003 , B60L7/14 , B60L11/123 , B60L11/14 , B60L15/007 , B60L2210/40 , B60L2220/14 , B60L2240/12 , B60L2240/36 , B60L2240/525 , H01L21/56 , H01L21/565 , H01L23/473 , H01L23/49575 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/06181 , H01L2224/291 , H01L2224/32245 , H01L2224/33 , H01L2224/37011 , H01L2224/4007 , H01L2224/40137 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2224/83815 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1203 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15151 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H02M7/003 , H05K7/20927 , Y02T10/6217 , Y02T10/645 , Y02T10/7077 , Y02T10/7241 , H01L2924/00014 , H01L2924/00 , H01L2924/00012

摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

摘要翻译： 电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的区域项目。在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角为每一个。

5.

发明授权
Power semiconductor unit, power module, power semiconductor unit manufacturing method, and power module manufacturing method 有权
标题翻译：功率半导体单元，功率模块，功率半导体单元制造方法和功率模块制造方法

公开(公告)号：US08723306B2

公开(公告)日：2014-05-13

申请号：US13811722

申请日：2011-07-25

申请人： Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa

发明人： Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49568 , B60L1/003 , B60L3/003 , B60L7/14 , B60L11/123 , B60L11/14 , B60L15/007 , B60L2210/40 , B60L2220/14 , B60L2240/12 , B60L2240/36 , B60L2240/525 , H01L21/56 , H01L21/565 , H01L23/473 , H01L23/49575 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/06181 , H01L2224/291 , H01L2224/32245 , H01L2224/33 , H01L2224/37011 , H01L2224/4007 , H01L2224/40137 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2224/83815 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1203 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15151 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H02M7/003 , H05K7/20927 , Y02T10/6217 , Y02T10/645 , Y02T10/7077 , Y02T10/7241 , H01L2924/00014 , H01L2924/00 , H01L2924/00012

摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

摘要翻译： 电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的区域项目。在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角为每一个。

6.

发明申请
Power Semiconductor Module and Manufacturing Method Thereof 有权
标题翻译：功率半导体模块及其制造方法

公开(公告)号：US20130175678A1

公开(公告)日：2013-07-11

申请号：US13818490

申请日：2011-09-05

申请人： Eiichi Ide , Shinji Hiramitsu , Hiroshi Hozoji , Nobutake Tsuyuno , Kinya Nakatsu , Takeshi Tokuyama , Akira Matsushita , Yusuke Takagi

发明人： Eiichi Ide , Shinji Hiramitsu , Hiroshi Hozoji , Nobutake Tsuyuno , Kinya Nakatsu , Takeshi Tokuyama , Akira Matsushita , Yusuke Takagi

IPC分类号： H01L23/34 , H01L21/48

CPC分类号： H01L23/34 , H01L21/4825 , H01L23/36 , H01L23/4334 , H01L23/473 , H01L23/492 , H01L23/49524 , H01L23/49575 , H01L24/29 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L25/072 , H01L25/18 , H01L2224/29111 , H01L2224/32245 , H01L2224/32503 , H01L2224/33 , H01L2224/33181 , H01L2224/3521 , H01L2224/37013 , H01L2224/37124 , H01L2224/37147 , H01L2224/37639 , H01L2224/37644 , H01L2224/37655 , H01L2224/40137 , H01L2224/48091 , H01L2224/4847 , H01L2224/48472 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/1306 , H01L2924/1305 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599 , H01L2924/01047 , H01L2924/01029

摘要： A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.

摘要翻译： 功率半导体模块包括在一个主表面上形成有多个控制电极的功率半导体元件，通过第一焊料材料连接到功率半导体元件的主表面之一的第一导体板和第二导体板通过第二焊料材料在功率半导体元件的另一个主表面上接合。在第一导体板上形成有从可应用的第一导体板的基部突出并且包括形成在上侧的第一突起表面的第一突出部。第二突起部分，包括形成在与功率半导体元件的主表面相对的一个表面上的第二突起表面。第一焊料材料插入在功率半导体元件和第一导体板之间，同时避免多个控制电极。如果通过功率半导体元件的一个主面从垂直方向突出，则第二突起部形成为使得第二突起表面的特定侧的突出部与形成的台阶部的突出部重叠在第一导体板的基部与第一突起部之间。功率半导体元件上的多个控制电极沿第二突出面的规定侧形成。

7.

发明授权
Power module, power converter device, and electrically powered vehicle 有权
标题翻译：电源模块，电源转换器和电动车

公开(公告)号：US08946567B2

公开(公告)日：2015-02-03

申请号：US12920296

申请日：2009-10-30

申请人： Kinya Nakatsu , Hiroshi Hozoji , Takeshi Tokuyama , Yusuke Takagi , Toshiya Satoh , Taku Oyama , Takanori Ninomiya

发明人： Kinya Nakatsu , Hiroshi Hozoji , Takeshi Tokuyama , Yusuke Takagi , Toshiya Satoh , Taku Oyama , Takanori Ninomiya

IPC分类号： H05K7/00 , H02M7/00 , B60L11/14 , B60L11/18 , H05K7/20 , H01L23/00

CPC分类号： H02M7/003 , B60L11/14 , B60L11/18 , B60L11/1803 , B60L2200/26 , B60L2210/40 , H01L21/4882 , H01L23/36 , H01L23/473 , H01L24/33 , H01L25/072 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H02M7/44 , H02M7/5395 , H02M2001/327 , H02P27/08 , H05K7/20409 , H05K7/205 , H05K7/209 , H05K7/20927 , Y02T10/70 , Y02T10/7005 , Y02T10/7077 , H01L2924/00 , H01L2924/00012

摘要： A power module and a power converter device including the power module include: two base plates with their main surfaces facing each other; a semiconductor circuit unit disposed between the two base plates; a connecting member that is connected to the two base plates and forms a housing region in which the semiconductor circuit unit is housed; and an insulating member that is placed between the base plate and the semiconductor circuit unit and secures electrical insulation of the base plate and the semiconductor circuit unit. A rigidity or thickness of the connecting member is less than a rigidity or thickness of the base plate.

摘要翻译： 包括功率模块的功率模块和功率转换器装置包括：两个基板，它们的主表面相互面对; 设置在所述两个基板之间的半导体电路单元; 连接构件，其连接到所述两个基板并形成容纳所述半导体电路单元的壳体区域; 以及绝缘构件，其设置在所述基板和所述半导体电路单元之间，并且确保所述基板和所述半导体电路单元的电绝缘。连接构件的刚性或厚度小于基板的刚度或厚度。

8.

发明授权
Power semiconductor module and manufacturing method thereof 有权
标题翻译：功率半导体模块及其制造方法

公开(公告)号：US08847374B2

公开(公告)日：2014-09-30

申请号：US13818490

申请日：2011-09-05

申请人： Eiichi Ide , Shinji Hiramitsu , Hiroshi Hozoji , Nobutake Tsuyuno , Kinya Nakatsu , Takeshi Tokuyama , Akira Matsushita , Yusuke Takagi

发明人： Eiichi Ide , Shinji Hiramitsu , Hiroshi Hozoji , Nobutake Tsuyuno , Kinya Nakatsu , Takeshi Tokuyama , Akira Matsushita , Yusuke Takagi

IPC分类号： H01L23/06 , H01L21/48 , H01L23/495 , H01L23/36 , H01L23/34 , H01L23/00 , H01L23/433 , H01L23/492 , H01L25/18 , H01L25/07

CPC分类号： H01L23/34 , H01L21/4825 , H01L23/36 , H01L23/4334 , H01L23/473 , H01L23/492 , H01L23/49524 , H01L23/49575 , H01L24/29 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L25/072 , H01L25/18 , H01L2224/29111 , H01L2224/32245 , H01L2224/32503 , H01L2224/33 , H01L2224/33181 , H01L2224/3521 , H01L2224/37013 , H01L2224/37124 , H01L2224/37147 , H01L2224/37639 , H01L2224/37644 , H01L2224/37655 , H01L2224/40137 , H01L2224/48091 , H01L2224/4847 , H01L2224/48472 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/1306 , H01L2924/1305 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599 , H01L2924/01047 , H01L2924/01029

摘要： A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.

摘要翻译： 功率半导体模块包括在一个主表面上形成有多个控制电极的功率半导体元件，通过第一焊料材料连接到功率半导体元件的主表面之一的第一导体板和第二导体板通过第二焊料材料在功率半导体元件的另一个主表面上接合。在第一导体板上形成有从可应用的第一导体板的基部突出并且包括形成在上侧的第一突起表面的第一突出部。第二突起部分，包括形成在与功率半导体元件的主表面相对的一个表面上的第二突起表面。第一焊料材料插入在功率半导体元件和第一导体板之间，同时避免多个控制电极。如果通过功率半导体元件的一个主面从垂直方向突出，则第二突起部形成为使得第二突起表面的特定侧的突出部与形成的台阶部的突出部重叠在第一导体板的基部与第一突起部之间。功率半导体元件上的多个控制电极沿第二突出面的规定侧形成。

9.

发明申请
Power Module, Power Converter Device, and Electrically Powered Vehicle 有权
标题翻译：电源模块，电源转换器和电动车

公开(公告)号：US20110299265A1

公开(公告)日：2011-12-08

申请号：US12920296

申请日：2009-10-30

申请人： Kinya Nakatsu , Hiroshi Hozoji , Takeshi Tokuyama , Yusuke Takagi , Toshiya Satoh , Taku Oyama , Takanori Ninomiya

发明人： Kinya Nakatsu , Hiroshi Hozoji , Takeshi Tokuyama , Yusuke Takagi , Toshiya Satoh , Taku Oyama , Takanori Ninomiya

IPC分类号： H05K7/00

CPC分类号： H02M7/003 , B60L11/14 , B60L11/18 , B60L11/1803 , B60L2200/26 , B60L2210/40 , H01L21/4882 , H01L23/36 , H01L23/473 , H01L24/33 , H01L25/072 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H02M7/44 , H02M7/5395 , H02M2001/327 , H02P27/08 , H05K7/20409 , H05K7/205 , H05K7/209 , H05K7/20927 , Y02T10/70 , Y02T10/7005 , Y02T10/7077 , H01L2924/00 , H01L2924/00012

摘要： A power module and a power converter device including the power module include: two base plates with their main surfaces facing each other; a semiconductor circuit unit disposed between the two base plates; a connecting member that is connected to the two base plates and forms a housing region in which the semiconductor circuit unit is housed; and an insulating member that is placed between the base plate and the semiconductor circuit unit and secures electrical insulation of the base plate and the semiconductor circuit unit. A rigidity or thickness of the connecting member is less than a rigidity or thickness of the base plate.

摘要翻译： 包括功率模块的功率模块和功率转换器装置包括：两个基板，它们的主表面相互面对; 设置在所述两个基板之间的半导体电路单元; 连接构件，其连接到所述两个基板并形成容纳所述半导体电路单元的壳体区域; 以及绝缘构件，其设置在所述基板和所述半导体电路单元之间，并且确保所述基板和所述半导体电路单元的电绝缘。连接构件的刚性或厚度小于基板的刚度或厚度。