公开(公告)号：US4789421A

公开(公告)日：1988-12-06

申请号：US780910

申请日：1985-09-27

申请人： Masayoshi Umeno ,  Shiro Sakai ,  Tetsuo Soga

发明人： Masayoshi Umeno ,  Shiro Sakai ,  Tetsuo Soga

IPC分类号： C30B29/40 ,  C30B29/42 ,  H01L21/18 ,  H01L21/205 ,  H01L29/267

CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/149

摘要： A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AlP and AlGaP thin films.

摘要翻译： GaAs生长晶体包括Si衬底，形成在衬底上的中间层和在中间层上生长的GaAs层。 中间层包括GaP / GaAsP和GaAsP / GaAs超晶格层以及另外的AlP和AlGaP薄膜。

公开(公告)号：US4963508A

公开(公告)日：1990-10-16

申请号：US483364

申请日：1990-02-22

申请人： Masayoshi Umeno ,  Shiro Sakai ,  Shinichiro Yahagi

发明人： Masayoshi Umeno ,  Shiro Sakai ,  Shinichiro Yahagi

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/267 ,  H01L31/0693 ,  H01L31/105 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L31/0693 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/267 ,  H01L31/105 ,  H01L31/184 ,  H01L33/0066 ,  Y02E10/544 ,  Y10S117/902 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/16 ,  Y10S438/933 ,  Y10S438/938

摘要： A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5.degree. and 5.degree. with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of the top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or mor GaP/GaAsP, GaAsP/GaAs superlattice layers. the wafer may be used to produce a seimconductor light emitting element which has a plurality of crystalline gaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer. The wafer may also be used to produce a compound semiconductor device such as amplifying and switching elements, light emitting and receiving elements and photovolataic elements. Methods for producing the semiconductor wafer, light emitting element and compound semiconductor devices are also disclosed.

公开(公告)号：US4928154A

公开(公告)日：1990-05-22

申请号：US325115

申请日：1989-03-20

申请人： Masayoshi Umeno ,  Shiro Sakai ,  Shinichiro Yahagi

发明人： Masayoshi Umeno ,  Shiro Sakai ,  Shinichiro Yahagi

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/267 ,  H01L31/0693 ,  H01L31/105 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L31/0693 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/267 ,  H01L31/105 ,  H01L31/184 ,  H01L33/0066 ,  Y02E10/544 ,  Y10S117/902 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/16 ,  Y10S438/933 ,  Y10S438/938

摘要： A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5.degree. and 5.degree. with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of a top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or more GaP/GaAsP, GaAsP/GaAs superlattice layers. The wafer may be used to produce a semiconductor light emitting element which has a plurality of crystalline GaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer. The wafer may also be used to produce a compound semiconductor device such as amplifying and switching elements, light emitting and receiving elements and photovolataic elements. Methods for producing the semiconductor wafer, light emitting element and compound semiconductor devices are also disclosed.

摘要翻译： 一种具有外延GaAs层的半导体晶片，包括具有相对于（100）在0.5度和5度之间的偏离角倾斜的主表面的单晶Si衬底; 以及在单晶Si衬底的主表面上外延生长的至少一个中间层，作为用于容纳Si衬底和外延生长在外延GaAs层上的外延GaAs层之间的晶格失配的缓冲层 至少一个中间层。 至少一个中间层可以包括一个或多个GaP / GaAsP，GaAsP / GaAs超晶格层。 该晶片可以用于制造半导体发光元件，该半导体发光元件具有多个晶体GaAs层，包括在中间层上的GaAs层外延生长的发光层。 晶片也可以用于制造诸如放大和开关元件，发光和接收元件和光电元件的化合物半导体器件。 还公开了制造半导体晶片，发光元件和化合物半导体器件的方法。

公开(公告)号：US09012924B2

公开(公告)日：2015-04-21

申请号：US13321082

申请日：2009-08-17

申请人： Shiro Sakai ,  Won Chul Seo ,  Dae Won Kim

发明人： Shiro Sakai ,  Won Chul Seo ,  Dae Won Kim

IPC分类号： H01L29/26 ,  G01J3/36 ,  B82Y20/00 ,  G01J3/02 ,  G01J3/12

CPC分类号： G01J3/0235 ,  B82Y20/00 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0259 ,  G01J3/36 ,  G01J3/42 ,  G01J2003/1213

摘要： Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate; a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions; and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions, from light incident on the photodetector. According to the present invention, a small-sized spectrum detector can be provided which can easily detect a peak wavelength distribution included in light of an unknown wavelength, without the use of optical equipment such as a grating or prism, thus dispensing with the need for the optical axis alignment of a complex optical system.

摘要翻译： 提供了能够小型化并且不需要复杂的光轴对准的光谱检测器。 本发明的光谱检测器包括：基板; 形成在所述基板上并包括具有多个凸部的半导体的光电探测器; 以及波长检测电路，用于从入射到光电检测器上的光检测透过多个凸部的光的波长。 根据本发明，可以提供一种小型光谱检测器，其可以容易地检测包括在未知波长的光中的峰值波长分布，而不需要使用诸如光栅或棱镜的光学设备，从而不需要 复合光学系统的光轴对准。

公开(公告)号：US09006084B2

公开(公告)日：2015-04-14

申请号：US13507210

申请日：2012-06-13

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： H01L21/46 ,  H01L21/02 ,  C30B25/02 ,  C30B29/40 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L21/0254 ,  C30B25/02 ,  C30B29/406 ,  H01L29/2003 ,  H01L33/0075

摘要： A method of fabricating a semiconductor substrate, includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.

摘要翻译： 一种制造半导体衬底的方法，包括在衬底上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，使用 以去除所述金属材料层和所述第一半导体层的一部分，并且在去除所述金属材料层的所述第一半导体层内形成空腔。

公开(公告)号：US20130313577A1

公开(公告)日：2013-11-28

申请号：US13985201

申请日：2011-05-17

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： H01L29/267 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L29/267 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/1608 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： Embodiments of the invention provide a crystalline aluminum carbide layer, a laminate substrate having the crystalline aluminum carbide layer formed thereon, and a method of fabricating the same. The laminate substrate has a GaN layer including a GaN crystal and an AlC layer including an AlC crystal. Further, the method of fabricating the laminate substrate, which has the AlN layer including the AlN crystal and the AlC layer including the AlC crystal, includes supplying a carbon containing gas and an aluminum containing gas to grow the AlC layer.

摘要翻译： 本发明的实施方案提供一种结晶碳化铝层，其上形成有结晶碳化铝层的层压基板及其制造方法。 层压基板具有包括GaN晶体的GaN层和包括AlC晶体的AlC层。 此外，具有包含AlN晶体的AlN层和包含AlC晶体的AlC层的层压基板的制造方法包括供给含碳气体和含铝气体以生长AlC层。

公开(公告)号：US08319947B2

公开(公告)日：2012-11-27

申请号：US12574333

申请日：2009-10-06

申请人： Hiroyuki Eki ,  Shiro Sakai

发明人： Hiroyuki Eki ,  Shiro Sakai

IPC分类号： B23B31/30 ,  B65G1/133 ,  F16K1/00 ,  G03B27/58 ,  G03B27/60 ,  G03B27/62

CPC分类号： F16K51/02 ,  G03F7/707 ,  G03F7/70841 ,  Y10T29/49 ,  Y10T279/11

摘要： An operating valve of the present invention is a differential pressure operating valve 100 for performing a vacuum suction of a substrate, the operating valve comprises a body 4 having an opening which is provided at an exhaust side for exhausting an air from an inside to an outside and is opposed to a suction side for sucking the air from the outside to the inside, a valve 8, and a spring 9 whose one end is connected with one of the suction side and the exhaust side of the body 4 and the other end is connected with the valve 8. The spring 9 is configured to stretch or compress in accordance with a differential pressure between the suction side and the exhaust side, and the valve 8 is provided with at least one hole.

摘要翻译： 本发明的操作阀是用于对基板进行真空抽吸的压差操作阀100，操作阀包括一个主体4，该主体4具有设置在排气侧的开口，用于从内部向外部排出空气 并且与吸入侧相对，用于从外部向内部吸入空气，阀8和弹簧9，其一端与主体4的吸入侧和排气侧中的一个连接，另一端为 与阀8连接。弹簧9构造成根据吸力侧和排气侧之间的压差拉伸或压缩，并且阀8设置有至少一个孔。

公开(公告)号：US08189635B2

公开(公告)日：2012-05-29

申请号：US12768073

申请日：2010-04-27

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/12 ,  H01S5/34333 ,  Y10S977/72

摘要： A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.

摘要翻译： 具有纳米图案的激光二极管设置在基板上。 第一导电型覆盖层设置在基板上，第二导电型覆盖层设置在第一导电型覆盖层上。 在第一导电型覆盖层和第二导电型覆盖层之间插入有源层。 柱状纳米图案布置在第二导电型覆盖层的表面，以形成诸如分布反馈激光二极管的激光二极管。

公开(公告)号：US20120021546A1

公开(公告)日：2012-01-26

申请号：US13137124

申请日：2011-07-21

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

公开(公告)号：US08084774B2

公开(公告)日：2011-12-27

申请号：US12352296

申请日：2009-01-12

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

摘要翻译： 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。