公开(公告)号：US08865585B2

公开(公告)日：2014-10-21

申请号：US13546300

申请日：2012-07-11

申请人： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L23/525 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02331 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method of forming post passivation interconnects comprises forming a passivation layer over a substrate, wherein a metal pad is embedded in the passivation layer, depositing a first dielectric layer on the passivation layer, applying a first patterning process to the first dielectric layer to form a first opening, forming a first seed layer over the first opening, filling the first opening with a conductive material, depositing a second dielectric layer on the first dielectric layer, applying a second patterning process to the second dielectric layer to form a second opening, forming an under bump metallization structure over the second opening and mounting an interconnect bump over the under bump metallization structure.

摘要翻译： 形成后钝化互连的方法包括在衬底上形成钝化层，其中金属焊盘嵌入钝化层中，在钝化层上沉积第一介电层，将第一图案化工艺应用于第一介电层以形成 第一开口，在第一开口上形成第一种子层，用导电材料填充第一开口，在第一介电层上沉积第二介电层，向第二介电层施加第二图案化工艺以形成第二开口，形成 在第二开口上方的凸块下金属化结构，并且在凸块下金属化结构之上安装互连凸块。

公开(公告)号：US20140015122A1

公开(公告)日：2014-01-16

申请号：US13546300

申请日：2012-07-11

申请人： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/768 ,  H01L23/498

CPC分类号： H01L23/525 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02331 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method of forming post passivation interconnects comprises forming a passivation layer over a substrate, wherein a metal pad is embedded in the passivation layer, depositing a first dielectric layer on the passivation layer, applying a first patterning process to the first dielectric layer to form a first opening, forming a first seed layer over the first opening, filling the first opening with a conductive material, depositing a second dielectric layer on the first dielectric layer, applying a second patterning process to the second dielectric layer to form a second opening, forming an under bump metallization structure over the second opening and mounting an interconnect bump over the under bump metallization structure.

摘要翻译： 形成后钝化互连的方法包括在衬底上形成钝化层，其中金属焊盘嵌入钝化层中，在钝化层上沉积第一介电层，将第一图案化工艺应用于第一介电层以形成 第一开口，在第一开口上形成第一种子层，用导电材料填充第一开口，在第一介电层上沉积第二介电层，向第二介电层施加第二图案化工艺以形成第二开口，形成 在第二开口上方的凸块下金属化结构，并且在凸块下金属化结构之上安装互连凸块。

公开(公告)号：US10128206B2

公开(公告)日：2018-11-13

申请号：US12904506

申请日：2010-10-14

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Meng-Wei Chou ,  Hung-Jui Kuo ,  Chung-Shi Liu

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Meng-Wei Chou ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/00

摘要： The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.

公开(公告)号：US20120009777A1

公开(公告)日：2012-01-12

申请号：US12832005

申请日：2010-07-07

申请人： Chung-Shi Liu ,  Hung-Jui Kuo ,  Meng-Wei Chou

发明人： Chung-Shi Liu ,  Hung-Jui Kuo ,  Meng-Wei Chou

IPC分类号： H01L21/768

CPC分类号： H01L24/03 ,  H01L23/3157 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming a device includes forming an under-bump metallurgy (UBM) layer including a barrier layer and a seed layer over the barrier layer; and forming a mask over the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. The first portion of the UBM layer includes a barrier layer portion and a seed layer portion. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A wet etch is performed to remove the seed layer portion. A dry etch is performed to remove the barrier layer portion.

摘要翻译： 一种形成器件的方法包括在阻挡层上形成包括阻挡层和籽晶层的凸起下金属（UBM）层; 并在UBM层上形成掩模。 掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。 UBM层的第一部分包括阻挡层部分和种子层部分。 在UBM层的开口和第二部分上形成金属凸块。 然后取下面具。 执行湿蚀刻以去除种子层部分。 执行干蚀刻以去除阻挡层部分。

公开(公告)号：US20130127059A1

公开(公告)日：2013-05-23

申请号：US13299100

申请日：2011-11-17

申请人： Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

发明人： Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC分类号： H01L23/48 ,  H01L21/66 ,  G06F17/50

CPC分类号： G06F17/5077 ,  G06F17/5072 ,  H01L23/488 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1403 ,  H01L2224/14132 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

摘要： A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.

公开(公告)号：US08791579B2

公开(公告)日：2014-07-29

申请号：US13299100

申请日：2011-11-17

申请人： Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

发明人： Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/485 ,  H01L23/495

CPC分类号： G06F17/5077 ,  G06F17/5072 ,  H01L23/488 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1403 ,  H01L2224/14132 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

摘要： A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.

摘要翻译： 一种装置包括在包装部件的顶表面上的多个连接器。 多个连接器包括具有第一横向尺寸的第一连接器和具有第二横向尺寸的第二连接器。 第二横向尺寸大于第一横向尺寸。 第一和第二横向尺寸在平行于包装部件的主表面的方向上测量。

公开(公告)号：US08609526B2

公开(公告)日：2013-12-17

申请号：US12842617

申请日：2010-07-23

申请人： Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

发明人： Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

IPC分类号： H01L21/445 ,  H01L21/4757

CPC分类号： H01L24/05 ,  H01L21/0206 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/81022 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.

摘要翻译： 形成集成电路结构的方法包括在晶片上形成含铜晶种层，并在含铜种子层的暴露表面上进行除氧步骤。 除氧步骤使用包括氟和氧的工艺气体进行。 然后使用含氮气体在含铜种子层的暴露表面上进行还原/吹扫步骤。 含铜层镀在含铜种子层上。

公开(公告)号：US20110092064A1

公开(公告)日：2011-04-21

申请号：US12842617

申请日：2010-07-23

申请人： Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

发明人： Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

IPC分类号： H01L21/3205

CPC分类号： H01L24/05 ,  H01L21/0206 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/81022 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.

摘要翻译： 形成集成电路结构的方法包括在晶片上形成含铜晶种层，并在含铜种子层的暴露表面上进行除氧步骤。 除氧步骤使用包括氟和氧的工艺气体进行。 然后使用含氮气体在含铜种子层的暴露表面上进行还原/吹扫步骤。 含铜层镀在含铜种子层上。

公开(公告)号：US08647796B2

公开(公告)日：2014-02-11

申请号：US13192113

申请日：2011-07-27

申请人： Chen-Hua Yu ,  Chung-Shi Liu ,  Hung-Jui Kuo

发明人： Chen-Hua Yu ,  Chung-Shi Liu ,  Hung-Jui Kuo

IPC分类号： G03F7/00

CPC分类号： H01L23/5226 ,  G03F7/0045 ,  G03F7/095 ,  H01L21/311 ,  H01L21/76804 ,  H01L24/24 ,  H01L24/82 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/24146 ,  H01L2224/73259 ,  H01L2224/8203 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2224/94 ,  H01L2225/06524 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2224/82 ,  H01L2224/81

摘要： A system and method for forming photoresists over semiconductor substrates is provided. An embodiment comprises a photoresist with a concentration gradient. The concentration gradient may be formed by using a series of dry film photoresists, wherein each separate dry film photoresist has a different concentration. The separate dry film photoresists may be formed separately and then placed onto the semiconductor substrate before being patterned. Once patterned, openings through the photoresist may have a tapered sidewall, allowing for a better coverage of the seed layer and a more uniform process to form conductive materials through the photoresist.

摘要翻译： 提供了一种用于在半导体衬底上形成光致抗蚀剂的系统和方法。 一个实施方案包括具有浓度梯度的光致抗蚀剂。 浓度梯度可以通过使用一系列干膜光致抗蚀剂形成，其中每个单独的干膜光致抗蚀剂具有不同的浓度。 单独的干膜光致抗蚀剂可以单独形成，然后在图案化之前放置在半导体衬底上。 一旦被图案化，通过光致抗蚀剂的开口可以具有锥形侧壁，允许更好地覆盖种子层，以及更均匀的工艺以通过光致抗蚀剂形成导电材料。

公开(公告)号：US08389397B2

公开(公告)日：2013-03-05

申请号：US12881495

申请日：2010-09-14

申请人： Yi-Yang Lei ,  Hung-Jui Kuo ,  Chung-Shi Liu

发明人： Yi-Yang Lei ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L21/67028 ,  H01L23/3114 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming a device includes providing a wafer including a substrate; and forming an under-bump metallurgy (UBM) layer including a barrier layer overlying the substrate and a seed layer overlying the barrier layer. A metal bump is formed directly over a first portion of the UBM layer, wherein a second portion of the UBM layer is not covered by the metal bump. The second portion of the UBM layer includes a seed layer portion and a barrier layer portion. A first etch is performed to remove the seed layer portion, followed by a first rinse step performed on the wafer. A second etch is performed to remove the barrier layer portion, followed by a second rinse step performed on the wafer. At least a first switch time from the first etch to the first rinse step and a second switch time from the second etch to the second rinse step is less than about 1 second.

摘要翻译： 一种形成器件的方法包括提供包括衬底的晶片; 以及形成包括覆盖在衬底上的阻挡层和覆盖在阻挡层上的种子层的凸起下金属（UBM）层。 直接在UBM层的第一部分上形成金属凸块，其中UBM层的第二部分不被金属凸块覆盖。 UBM层的第二部分包括种子层部分和阻挡层部分。 进行第一蚀刻以除去种子层部分，接着在晶片上执行第一漂洗步骤。 执行第二蚀刻以去除阻挡层部分，接着在晶片上执行第二冲洗步骤。 从第一蚀刻到第一漂洗步骤的至少第一切换时间和从第二蚀刻到第二冲洗步骤的第二切换时间小于约1秒。