摘要:
First and second flexible interconnect structures are provided and each includes a flexible interconnect layer and a chip with a surface having chip pads attached to the flexible interconnect layer. Molding material is inserted between the flexible interconnect layers for encapsulating the respective chips. Vias in the flexible interconnect layers are formed to extend to selected chip pads, and a pattern of electrical conductors is applied which extends over the flexible interconnect layers and into the vias to couple selected ones of the chip pads.
摘要:
A method for fabricating an electronic assembly comprises attaching an insulative film to a frame and positioning at least one electronic component having a face with connections pads face down on the insulative film. The insulative film is positioned on a porous sheet supported by a vacuum fixture. The porous sheet and vacuum fixture are adapted so as to be capable of creating vacuum conditions for holding the insulative film with a substantially flat surface on the porous sheet. A vacuum is created within the vacuum chamber for flatly holding the insulative film on the porous sheet. A substrate is applied to the insulative film and the at least one electronic component. In one embodiment the substrate is applied by securing the insulative film in position with a mold form having at least one opening around the electronic component and adding substrate molding material at least partially around the component through the opening. In another embodiment the substrate is applied by providing a substrate having at least one well therein and positioning the insulative film over at least a portion of the substrate and the electronic component into the well.
摘要:
A high density interconnect structure incorporating a plurality of laminated dielectric layers is fabricated using a SPI/epoxy crosslinking copolymer blend adhesive in order to maintain the stability of the already fabricated structure during the addition of the later laminations while also maintaining the repairability of the high density interconnect structure.
摘要:
A differentiable ablation approach to patterning dielectrics which are not of the same absorbance uses an absorbant dielectric at a specified laser wavelength over a non-absorbant dielectric at that wavelength. The absorbant dielectric may be laser-patterned and become an integral mask enabling plasma etching of the underlying non-absorbant dielectric. If the patterning of the absorbant dielectric involves vias, polymer ridges formed around via surfaces during laser patterning may be removed at the same time the underlying non-absorbant dielectric is etched using a transparent, oxygen plasma resistant mask. Alternatively, an inert mask may be used instead of the absorbant dielectric to allow plasma etching of the non-absorbant dielectric.
摘要:
A high density interconnect (HDI) structure having a dielectric multi-layer interconnect structure on a substrate is fabricated by forming a chip well, placing a chip in the well, and connecting the chip to the interconnect structure. Additionally, temperature sensitive chips or devices may be located beneath the dielectric multi-layer interconnect structure. A spacer die may be located in the substrate while the interconnect structure is fabricated and removed after a chip well aligned with the spacer die is formed, in order to accommodate a chip thickness which is greater than the dielectric multi-layer interconnect structure thickness.
摘要:
A body is hermetically sealed by electroplating a hermetic layer over the exterior surface of the body. A hermetic high density interconnect structure is provided by forming a continuous metal layer over the outermost dielectric layer of the multilayer interconnect structure and by disposing that continuous metal layer in a hermetically sealing relation to the substrate of the high density interconnect structure. A variety of techniques may be used for providing electrical feedthroughs between the interior and exterior of the hermetic enclosure as may a pseudo-hermetic enclosure in those situations where true hermeticity is not required.
摘要:
Substrate material is molded directly to semiconductor chips and other electrical components that are positioned for integrated circuit module fabrication. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A mold form is positioned around the chips. Substrate molding material is added within the mold form, and the substrate molding material is then hardened. A dielectric layer having vias aligned with predetermined ones of the contact pads and having an electrical conductor extending through the vias is situated on the hardened substrate molding material and the faces of the chips. A thermal plug may be affixed to the backside of a chip before substrate molding material is added. A connector frame may be placed on the adhesive layer before substrate molding material is added. A dielectric layer may be placed over the backsides of the chips before the substrate molding material is added to enhance repairability. A portion of the chips and substrate molding material may be removed after the substrate molding material is hardened.
摘要:
A multi-chip module includes a substrate supporting a plurality of chips. A dielectric layer which overlies the chips and the substrate has a connection surface and a substrate surface with metallization planes having plane openings patterned on each surface and vias aligned with predetermined pads on the chips and predetermined portions of the metallization plane of the substrate surface. An adhesive layer is situated between the substrate and the substrate surface of the dielectric layer, and a pattern of electrical conductors extends through the vias to interconnect selected chips and selected portions of the metallization planes. In a related design, the dielectric layer may be a board having chip openings and conductive through-connections aligned with predetermined portions of the metallization plane of the substrate surface. The board can be thick enough that chip wells are not necessary for each chip, in which case, a base dielectric layer having vias aligned with chip pads, through-connections and the connection surface overlies the board and supports a pattern of electrical conductors which interconnect the chips and metallization planes.
摘要:
A mixture for affixing dice to a substrate includes a thermoplastic polyimide, a solvent for the polyimide, and a solvent which does not dissolve the polyimide but adds thixotropicity to the mixture. The mixture is applied to the substrate, the dice are placed thereon, and the solvents are evaporated to bond the dice to the substrate. The bond is radiation hard and exhibits high shear pull strength. A poor solvent for the polyimide, sprayed over the dice and exposed portions of die attach material, causes some polyimide to precipitate out of solution in the exposed portions of die attach material to form a grid that extends between the dice and prevents the dice from "swimming together" during high temperature processing. In a solvent die-attachment method, the substrate is first coated with a mixture of die attach material, and the mixture is dried. Spraying a solvent over the die attach material causes the material to soften so that the dice applied thereto may adhere. The die attach material is then dried to form the bond.
摘要:
A high density interconnect structure incorporating a plurality of laminated dieletric layers is fabricated using thermoplastic adhesive layers of progressively lower glass transition temperature in order to maintain the stability of the already fabricated structure during the addition of the later laminations. This structure also facilitates the removal of only a portion of the high density interconnect structure where a fault in the system can be corrected in one of the upper layers of the high density interconnect structure.