Nonvolatile semiconductor memory device and method of erasing and programming the same
    5.
    发明申请
    Nonvolatile semiconductor memory device and method of erasing and programming the same 有权
    非易失性半导体存储器件及其擦除和编程方法

    公开(公告)号:US20080239817A1

    公开(公告)日:2008-10-02

    申请号:US12078446

    申请日:2008-03-31

    IPC分类号: G11C16/10

    摘要: A nonvolatile semiconductor memory device includes a semiconductor substrate having a source, a drain, and a channel region between the source and the drain. The channel region has a first end portion near the drain, a second end portion near the source, and a middle portion between the first and second end portions. The first and second end portions having approximately same width. The memory device is electrically erased by using a hot carrier generated in the first end portion due to avalanche breakdown. The channel region includes a first channel extending from the drain and a second channel adjacent to the first channel. An impurity concentration of the second channel is higher than that of the first channel. An interface between the first and second channels is located in the middle portion between the first and second end portions.

    摘要翻译: 非易失性半导体存储器件包括在源极和漏极之间具有源极,漏极和沟道区域的半导体衬底。 沟道区域具有靠近漏极的第一端部,靠近源极的第二端部,以及第一和第二端部之间的中间部分。 第一和第二端部具有大致相同的宽度。 通过使用由于雪崩击穿而在第一端部中产生的热载体来电存储器件。 沟道区域包括从漏极延伸的第一通道和邻近第一通道的第二通道。 第二通道的杂质浓度高于第一通道的杂质浓度。 第一和第二通道之间的界面位于第一和第二端部之间的中间部分。

    Semiconductor device having first and second insulation separation regions
    6.
    发明申请
    Semiconductor device having first and second insulation separation regions 有权
    具有第一和第二绝缘分离区域的半导体器件

    公开(公告)号:US20060278950A1

    公开(公告)日:2006-12-14

    申请号:US11447021

    申请日:2006-06-06

    申请人: Akira Tai

    发明人: Akira Tai

    IPC分类号: H01L29/00

    摘要: A semiconductor device includes: a semiconductor substrate having a first surface and a second surface; a first insulation separation region disposed on the first surface of the semiconductor substrate; a second insulation separation region surrounded with the first insulation separation region and electrically isolated from the first insulation separation region; a semiconductor element disposed in the second insulation separation region; and an electrode connecting to the first insulation separation region for energizing and generating heat in the first insulation separation region. The first insulation separation region functions as a heater so that the semiconductor element in the second insulation separation region is locally heated.

    摘要翻译: 半导体器件包括:具有第一表面和第二表面的半导体衬底; 设置在所述半导体基板的第一表面上的第一绝缘分离区域; 第二绝缘分离区,被所述第一绝缘分离区包围并与所述第一绝缘分离区电绝缘; 设置在所述第二绝缘分离区域中的半导体元件; 以及连接到第一绝缘分离区域的电极,用于在第一绝缘分离区域中激发和产生热量。 第一绝缘分离区域用作加热器,使得第二绝缘分离区域中的半导体元件被局部加热。

    Semiconductor accelerometer with damperless structure
    7.
    发明授权
    Semiconductor accelerometer with damperless structure 失效
    具有无阻尼结构的半导体加速度计

    公开(公告)号:US5507182A

    公开(公告)日:1996-04-16

    申请号:US198052

    申请日:1994-02-18

    摘要: A semiconductor accelerometer which can satisfy the requirements of both the sensitivity and the fracture strength without any contrivance for providing viscous liquid and beam stopper material is provided. A casing comprises a stem and a shell. The casing houses an accelerometer chip. The silicon accelerometer chip is of double cantilever beam structure. Each beam is provided with piezo resistance layers. The motion of the beams due to the action of acceleration is converted into electrical signals. The resonant frequency of the beams of the accelerometer chip is above the resonant frequency of the casing itself, so that the acceleration components above this resonant frequency are damped by the casing and therefore most acceleration components in the resonant frequency of the beam are damped. As a result, the beams of the accelerometer chip can be protected from the impacts due to the dropping of the accelerometer, or the like.

    摘要翻译: 提供了能够满足灵敏度和断裂强度要求的半导体加速度计,而没有任何设计提供粘性液体和束塞材料。 壳体包括杆和壳。 外壳装有加速度计芯片。 硅加速度计芯片是双悬臂梁结构。 每个梁都设有压电电阻层。 由于加速度的作用,梁的运动被转换为电信号。 加速度计芯片的光束的谐振频率高于壳体本身的谐振频率,使得高于该谐振频率的加速度分量被壳体阻尼,因此波束的谐振频率中的大多数加速度分量被衰减。 结果,可以防止加速度计芯片的梁由于加速度计的掉落等而受到冲击。

    Semiconductor device having first and second insulation separation regions
    9.
    发明授权
    Semiconductor device having first and second insulation separation regions 有权
    具有第一和第二绝缘分离区域的半导体器件

    公开(公告)号:US07906829B2

    公开(公告)日:2011-03-15

    申请号:US11447021

    申请日:2006-06-06

    申请人: Akira Tai

    发明人: Akira Tai

    IPC分类号: H01L21/70

    摘要: A semiconductor device includes: a semiconductor substrate having a first surface and a second surface; a first insulation separation region disposed on the first surface of the semiconductor substrate; a second insulation separation region surrounded with the first insulation separation region and electrically isolated from the first insulation separation region; a semiconductor element disposed in the second insulation separation region; and an electrode connecting to the first insulation separation region for energizing and generating heat in the first insulation separation region. The first insulation separation region functions as a heater so that the semiconductor element in the second insulation separation region is locally heated.

    摘要翻译: 半导体器件包括:具有第一表面和第二表面的半导体衬底; 设置在所述半导体基板的第一表面上的第一绝缘分离区域; 第二绝缘分离区,被所述第一绝缘分离区包围并与所述第一绝缘分离区电绝缘; 设置在所述第二绝缘分离区域中的半导体元件; 以及连接到第一绝缘分离区域的电极,用于在第一绝缘分离区域中激发和产生热量。 第一绝缘分离区域用作加热器,使得第二绝缘分离区域中的半导体元件被局部加热。

    Fixing device with pulling rollers
    10.
    发明授权
    Fixing device with pulling rollers 失效
    固定装置与拉辊

    公开(公告)号:US5325164A

    公开(公告)日:1994-06-28

    申请号:US962986

    申请日:1992-10-16

    IPC分类号: G03G15/20

    CPC分类号: G03G15/2064

    摘要: In a device for fixing a toner image on a sheet in an image forming apparatus, a pair of pulling rollers is disposed downstream of a heating roller in the direction to convey the sheet and is rotated at a peripheral speed higher than that of the heating roller.

    摘要翻译: 在用于将图像形成装置中的片材上的调色剂图像定影的装置中,一对牵引辊设置在加热辊的下游,沿着输送片材的方向,并以比加热辊的圆周速度更高的圆周速度旋转 。