公开(公告)号：US08263490B2

公开(公告)日：2012-09-11

申请号：US12923576

申请日：2010-09-28

申请人： Manabu Tomisaka ,  Hidetoshi Katou ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki

发明人： Manabu Tomisaka ,  Hidetoshi Katou ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki

IPC分类号： H01L21/44

CPC分类号： G01B11/06 ,  G01B11/306 ,  H01L21/32115 ,  H01L21/7684 ,  H01L22/12 ,  H01L22/20 ,  H01L24/27 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  Y10T29/52 ,  H01L2924/01014 ,  H01L2924/00

摘要： A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.

摘要翻译： 公开了半导体器件的金属电极的形成方法。 该方法包括：获取关于半导体衬底的表面部分的表面形状的数据; 并且使变形装置基于数据使半导体衬底变形，使得切割平面和表面部分之间的距离落入所需切割量的精度。 在使半导体基板变形时，使用多个致动器作为变形装置。 多个致动器的间距被设定为大于半导体衬底的厚度分布的空间频率的波长的一半的值，小于或等于该波长的值。

公开(公告)号：US20110207241A1

公开(公告)日：2011-08-25

申请号：US12923576

申请日：2010-09-28

申请人： Manabu Tomisaka ,  Hidetoshi Katou ,  Yutaka Fukuda ,  Yoshiko Fukuda ,  Akira Tai ,  Kazuo Akamatsu

发明人： Manabu Tomisaka ,  Hidetoshi Katou ,  Yutaka Fukuda ,  Yoshiko Fukuda ,  Akira Tai ,  Kazuo Akamatsu

IPC分类号： H01L21/66 ,  B23P19/00

CPC分类号： G01B11/06 ,  G01B11/306 ,  H01L21/32115 ,  H01L21/7684 ,  H01L22/12 ,  H01L22/20 ,  H01L24/27 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  Y10T29/52 ,  H01L2924/01014 ,  H01L2924/00

摘要： A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.

摘要翻译： 公开了半导体器件的金属电极的形成方法。 该方法包括：获取关于半导体衬底的表面部分的表面形状的数据; 并且使变形装置基于数据使半导体衬底变形，使得切割平面和表面部分之间的距离落入所需切割量的精度。 在使半导体基板变形时，使用多个致动器作为变形装置。 多个致动器的间距被设定为大于半导体衬底的厚度分布的空间频率的波长的一半的值，小于或等于该波长的值。

公开(公告)号：US20110198733A1

公开(公告)日：2011-08-18

申请号：US12887874

申请日：2010-09-22

申请人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

发明人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

IPC分类号： H01L29/06 ,  H01L21/66

CPC分类号： H01L21/76804 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/11 ,  H01L24/741 ,  H01L2224/02166 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11505 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/749 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.

摘要翻译： 在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。 通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。 锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

公开(公告)号：US08405218B2

公开(公告)日：2013-03-26

申请号：US12887874

申请日：2010-09-22

申请人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki

发明人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76804 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/11 ,  H01L24/741 ,  H01L2224/02166 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11505 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/749 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.

摘要翻译： 在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。 通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。 锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

公开(公告)号：US20110042741A1

公开(公告)日：2011-02-24

申请号：US12805733

申请日：2010-08-17

申请人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Manabu Tomisaka ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

发明人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Manabu Tomisaka ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

IPC分类号： H01L29/772 ,  H01L23/498

CPC分类号： H01L23/3192 ,  H01L23/4334 ,  H01L23/492 ,  H01L24/01 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/48491 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

摘要翻译： 半导体器件包括用于覆盖第一金属布线的第一保护膜。 第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。 即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

公开(公告)号：US07910460B2

公开(公告)日：2011-03-22

申请号：US12805537

申请日：2010-08-05

申请人： Manabu Tomisaka ,  Hisatoshi Kojima ,  Akihiro Niimi

发明人： Manabu Tomisaka ,  Hisatoshi Kojima ,  Akihiro Niimi

IPC分类号： H01L21/00

CPC分类号： H01L24/13 ,  H01L21/7684 ,  H01L22/12 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05686 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01059 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/19042 ,  H01L2924/00 ,  H01L2224/05099

摘要： A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.

摘要翻译： 金属电极形成方法包括：在基板上形成床电极; 在床电极上形成具有开口的保护膜，以使床电极从开口露出; 形成覆盖保护膜和开口的金属膜; 将基板安装在吸附台上，用表面形状测量装置测量金属膜的表面形状; 通过变形装置使基板变形，使得主表面和切割表面之间的差在预定范围内; 测量所述主表面的表面形状，以及确定所述差是否在预定范围内; 并且与切割表面一起切割基板，使得金属膜被图案化为金属电极。

公开(公告)号：US20100288636A1

公开(公告)日：2010-11-18

申请号：US12800285

申请日：2010-05-12

申请人： Masahiro Sone ,  Manabu Tomisaka ,  Masashi Totokawa

发明人： Masahiro Sone ,  Manabu Tomisaka ,  Masashi Totokawa

IPC分类号： G01N27/26 ,  B05D5/12

CPC分类号： G01N33/0037 ,  G01N27/4071 ,  Y02A50/245

摘要： A laminated gas sensor for exhaust gases improving thermal shock resistance, durability and reliability without permitting characteristics of the exhaust gas sensor to be particularly lowered is provided. A laminated gas sensor comprising a solid electrolyte layer (4) formed on one surface of a substrate (1) holding a lower electrode layer (3) therebetween, and an upper electrode layer (5) on the solid electrolyte layer (4), wherein the substrate (1) is a dense substrate made of at least one substrate material selected from silicon nitride, silicon carbide and aluminum nitride, and, as required, a thermal expansion buffer layer (8) is provided between the substrate (1) inclusive of at least part of the lower electrode layer (3) and the solid electrolyte layer (4), and the difference is not more than 5 ppm/° C. between the coefficient of thermal expansion of the solid electrolyte layer (4) and the coefficient of thermal expansion of the substrate (1) that comes in contact with at least part of the solid electrolyte layer (4) or of the thermal expansion buffer layer (8), and a method of producing the same.

摘要翻译： 提供一种用于排气的层压气体传感器，其提高耐热冲击性，耐久性和可靠性，而不会使排气传感器的特性降低得特别低。 一种层压气体传感器，其特征在于，在固定电解质层（4）上形成固体电解质层（4），所述固体电解质层（4）形成在保持下部电极层（3）的基板（1）的一个表面上，所述固体电解质层（4） 基板（1）是由选自氮化硅，碳化硅和氮化铝的至少一种基板材料制成的致密基板，并且根据需要，在基板（1）之间设置热膨胀缓冲层（8） 所述下部电极层（3）和所述固体电解质层（4）的至少一部分在所述固体电解质层（4）的热膨胀系数与所述固体电解质层（4）的系数之差为5ppm /℃以下 与至少一部分固体电解质层（4）或热膨胀缓冲层（8）接触的基板（1）的热膨胀及其制造方法。

公开(公告)号：US20060016267A1

公开(公告)日：2006-01-26

申请号：US11180528

申请日：2005-07-14

申请人： Hiroaki Tanaka ,  Manabu Tomisaka

发明人： Hiroaki Tanaka ,  Manabu Tomisaka

IPC分类号： G01L9/00

CPC分类号： G01L9/0054 ,  G01L19/0069 ,  G01L19/143 ,  G01L19/147 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/16151 ,  H01L2924/00014 ,  H01L2924/00

摘要： A pressure sensor includes a semiconductor substrate having a diaphragm in which an electrical circuit including a gauge resistance is formed, an insulation film provided on a surface of the semiconductor substrate, an Al film provided on the insulation film and electrically connected to the electrical circuit through a conductor hole of the insulation film, an Au film provided on the Al film through a Ti film, a first protective film which covers the Al film and has an opening portion from which a portion of the Au film is exposed. In the pressure sensor, a second protective film made of polyimideamide or polyimide covers at least the surface of the Au film exposed from the first protective film, and a vicinity of the opening portion of the first protective film. Therefore, corrosion resistance of the Al film can be prevented while the pressure sensor has a reduced component number.

摘要翻译： 压力传感器包括具有隔膜的半导体基板，其中形成有电阻值的电路，设置在半导体基板的表面上的绝缘膜，设置在绝缘膜上并与电路电连接的Al膜 绝缘膜的导体孔，通过Ti膜设置在Al膜上的Au膜，覆盖Al膜并具有露出Au膜的一部分的开口部的第一保护膜。 在压力传感器中，由聚酰亚胺酰亚胺或聚酰亚胺构成的第二保护膜至少覆盖从第一保护膜露出的Au膜的表面和第一保护膜的开口部附近。 因此，当压力传感器的部件数量减少时，可以防止Al膜的耐腐蚀性。

公开(公告)号：US07800232B2

公开(公告)日：2010-09-21

申请号：US12073166

申请日：2008-02-29

申请人： Manabu Tomisaka ,  Hisatoshi Kojima ,  Akihiro Niimi

发明人： Manabu Tomisaka ,  Hisatoshi Kojima ,  Akihiro Niimi

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L21/7684 ,  H01L22/12 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05686 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01059 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/19042 ,  H01L2924/00 ,  H01L2224/05099

摘要： A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.

摘要翻译： 金属电极形成方法包括：在基板上形成床电极; 在床电极上形成具有开口的保护膜，以使床电极从开口露出; 形成覆盖保护膜和开口的金属膜; 将基板安装在吸附台上，用表面形状测量装置测量金属膜的表面形状; 通过变形装置使基板变形，使得主表面和切割表面之间的差在预定范围内; 测量所述主表面的表面形状，以及确定所述差是否在预定范围内; 并且与切割表面一起切割基板，使得金属膜被图案化为金属电极。

公开(公告)号：US07268008B2

公开(公告)日：2007-09-11

申请号：US11325514

申请日：2006-01-05

申请人： Manabu Tomisaka ,  Yoshifumi Watanabe ,  Hiroaki Tanaka

发明人： Manabu Tomisaka ,  Yoshifumi Watanabe ,  Hiroaki Tanaka

IPC分类号： H01L21/00

CPC分类号： G01L9/0042 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00

摘要： A method for manufacturing a pressure sensor includes the steps of: preparing a semiconductor substrate; forming an insulation film on the substrate; forming a first metal film on the insulation film; forming a first protection film on the first metal film and the insulation film; forming a second protection film on the first metal film and the first protection film; performing reduction treatment of adhesive force on the second protection film, the force between the second protection film and a second metal film; forming the second metal film on the first metal film and the first protection film; and removing a part of the second metal film.

摘要翻译： 制造压力传感器的方法包括以下步骤：制备半导体衬底; 在基板上形成绝缘膜; 在绝缘膜上形成第一金属膜; 在第一金属膜和绝缘膜上形成第一保护膜; 在第一金属膜和第一保护膜上形成第二保护膜; 对第二保护膜施加粘合力的还原处理，第二保护膜和第二金属膜之间的力; 在第一金属膜和第一保护膜上形成第二金属膜; 以及去除所述第二金属膜的一部分。