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    Method of producing semiconductor device
    1.
    发明申请
    Method of producing semiconductor device 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20060079087A1

    公开(公告)日：2006-04-13

    申请号：US11041217

    申请日：2005-01-25

    申请人： Kazuo Kawamura ,  Satoshi Inagaki ,  Takashi Saiki ,  Ryou Nakamura

    发明人： Kazuo Kawamura ,  Satoshi Inagaki ,  Takashi Saiki ,  Ryou Nakamura

    IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/336

    CPC分类号： H01L21/02186 ,  H01L21/26513 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/318 ,  H01L29/4933 ,  H01L29/665

    摘要： A method of producing a semiconductor device is disclosed that is able to reduce fluctuations of a sheet resistance of a silicide layer in the semiconductor device formed by a salicide process. When depositing a titanium nitride film on a cobalt film in the salicide process, the thickness of the titanium nitride film is set to be sufficiently small so that a nano-grain structure or an amorphous structure is formed in the titanium nitride film. In the titanium nitride film, the titanium composition is enriched.

    摘要翻译： 公开了一种制造半导体器件的方法，其能够减少通过自对准硅化物工艺形成的半导体器件中的硅化物层的薄层电阻的波动。 当在自对准硅化物工艺中在钴膜上沉积氮化钛膜时，将氮化钛膜的厚度设定得足够小，使得在氮化钛膜中形成纳米晶粒结构或非晶结构。 在氮化钛膜中，钛组合物富集。

    Manufacture of semiconductor device having STI and semiconductor device manufactured
    2.
    发明授权
    Manufacture of semiconductor device having STI and semiconductor device manufactured 有权
    制造具有STI和半导体器件的半导体器件的制造

    公开(公告)号：US07037803B2

    公开(公告)日：2006-05-02

    申请号：US10721870

    申请日：2003-11-26

    申请人： Kengo Inoue ,  Toshifumi Mori ,  Ryou Nakamura ,  Hiroyuki Ohta ,  Takashi Saiki

    发明人： Kengo Inoue ,  Toshifumi Mori ,  Ryou Nakamura ,  Hiroyuki Ohta ,  Takashi Saiki

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76224 ,  H01L21/823871 ,  H01L21/823878

    摘要： A semiconductor device manufacture method has the steps of: (a) forming a polishing stopper layer over a semiconductor substrate; (b) etching the semiconductor substrate to form a trench; (c) forming a first liner insulating layer of silicon oxide over the surface of the trench; (d) forming a second liner insulating layer of silicon nitride over the first liner insulating layer, the second liner insulating layer having a thickness of at least 20 nm or at most 8 nm; (e1) depositing a third liner insulating layer of silicon oxide over the second liner insulating layer by plasma CVD at a first bias; and (e2) depositing an isolation layer of silicon oxide by plasma CVD at a second bias higher than the first bias, the isolation layer burying a recess defined by the third liner insulating layer.

    摘要翻译： 半导体器件制造方法具有以下步骤：（a）在半导体衬底上形成抛光阻挡层; （b）蚀刻半导体衬底以形成沟槽; （c）在所述沟槽的表面上形成氧化硅的第一衬垫绝缘层; （d）在所述第一衬垫绝缘层上形成氮化硅的第二衬垫绝缘层，所述第二衬垫绝缘层的厚度为至少20nm或至多8nm; （e1）在第一偏压下通过等离子体CVD沉积第二衬里绝缘层上的第三衬垫绝缘层氧化硅; 和（e2）以高于第一偏压的第二偏压通过等离子体CVD沉积氧化硅隔离层，隔离层埋设由第三衬里绝缘层限定的凹部。

    METAL BASE CIRCUIT BOARD
    3.
    发明申请
    METAL BASE CIRCUIT BOARD 有权
    金属基座电路板

    公开(公告)号：US20110132644A1

    公开(公告)日：2011-06-09

    申请号：US12994507

    申请日：2009-05-21

    申请人： Taiki Nishi ,  Takeshi Miyakawa ,  Kiyokazu Yamazaki ,  Takashi Saiki

    发明人： Taiki Nishi ,  Takeshi Miyakawa ,  Kiyokazu Yamazaki ,  Takashi Saiki

    IPC分类号： H05K1/03

    CPC分类号： H05K1/056 ,  F21K9/00 ,  H01L25/0753 ,  H01L33/46 ,  H01L33/60 ,  H01L2924/0002 ,  H05K1/0271 ,  H05K1/0274 ,  H05K3/0061 ,  H05K3/285 ,  H05K2201/0209 ,  H05K2201/068 ,  H05K2201/09781 ,  H05K2201/10106 ,  H05K2201/2054 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49165 ,  Y10T428/12569 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/252 ,  H01L2924/00

    摘要： Lifespan of LEDs can be lengthened, and the workability of the printed circuit board during circuit formation and during LED mounting can be improved.A metal base circuit board, having an insulating layer with a linear expansion coefficient of 60 ppm per degree C. or higher and 120 ppm per degree C. or lower, a metal foil provided on one side of the insulating layer, comprising a metal material with a linear expansion coefficient of 10 ppm per degree C. or higher and 35 ppm per degree C. or lower, a circuit portion and a non-circuit potion having a linear expansion coefficient of 10 ppm per degree C. or higher and 35 ppm per degree C. or lower, and a white film formed on top of the insulating layer, circuit portion, and non-circuit portion, the total sum of the areas of the non-circuit portion and the circuit portion on top of the insulating layer being 50% or higher and 95% or lower relative to the area of the metal foil, and the relation between the linear expansion coefficients of each of the materials being: linear expansion coefficient of insulating layer>linear expansion coefficient of metal foil>linear expansion coefficient of circuit portion and non-circuit portion.

    摘要翻译： LED的寿命可以延长，并且可以提高电路形成期间和LED安装期间印刷电路板的可加工性。 一种金属基底电路板，具有线性膨胀系数为60ppm /℃以上且120ppm /℃以下的绝缘层，设置在绝缘层一侧的金属箔，其包含金属材料 线性膨胀系数为10ppm /℃以上，35ppm /℃以下，具有线性膨胀系数为10ppm /℃以上且35ppm的电路部分和非电路部分 以及形成在绝缘层，电路部分和非电路部分之上的白色膜，绝缘层顶部的非电路部分和电路部分的面积的总和 相对于金属箔的面积为50％以上且95％以下，各材料的线膨胀系数之间的关系为：绝缘层的线膨胀系数>金属箔的线膨胀系数>线膨胀 系数o f电路部分和非电路部分。

    Field effect transistors with different gate widths
    4.
    发明申请
    Field effect transistors with different gate widths 有权

    公开(公告)号：US20100255668A1

    公开(公告)日：2010-10-07

    申请号：US12817508

    申请日：2010-06-17

    申请人： Hiroshi NOMURA ,  Takashi Saiki ,  Tsunehisa Sakoda

    发明人： Hiroshi NOMURA ,  Takashi Saiki ,  Tsunehisa Sakoda

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/823842 ,  H01L21/82385

    摘要： Four regions (a narrow NMOS region, a wide NMOS region, a wide PMOS region, and a narrow PMOS region) are defined on a semiconductor substrate. Then, after a gate insulating film and a polysilicon film are sequentially formed on the semiconductor substrate, n-type impurities are introduced into the polysilicon film in the wide NMOS region. Next, by patterning the polysilicon film, gate electrodes are formed in the four regions. Then, n-type impurities are introduced into the gate electrodes in the narrow NMOS region and the wide NMOS region. As a result, an impurity concentration of the gate electrode in the narrow NMOS region becomes lower than that of the gate electrode in the wide NMOS region.

    DOOR ASSEMBLY INCLUDING A TOUCH SENSITIVE PORTION FOR CONTROLLING AUTOMATED DOOR MOVEMENT
    5.
    发明申请
    DOOR ASSEMBLY INCLUDING A TOUCH SENSITIVE PORTION FOR CONTROLLING AUTOMATED DOOR MOVEMENT 有权
    门组件包括用于控制自动门运动的触感敏感部分

    公开(公告)号：US20100019919A1

    公开(公告)日：2010-01-28

    申请号：US12092155

    申请日：2006-09-12

    申请人： Pei-Yuan Peng ,  Jaime A. Rivera ,  Atsushi Yamada ,  Takashi Saiki

    发明人： Pei-Yuan Peng ,  Jaime A. Rivera ,  Atsushi Yamada ,  Takashi Saiki

    IPC分类号： G08B21/00

    CPC分类号： B66B13/26

    摘要： An assembly (20) for controlling movement of an automatically moveable door panel (22) includes a sensor (30, 32, 34) positioned on at least one of a door panel (22) or a door frame member (24, 26). The sensitive portion provides an indication of when an object is in contact with or in very close proximity to a sensitive portion. A sensitive portion is established over an area of the door or door frame member at which an object may become caught during automated door movement. A disclosed example includes using an electromechanical film as a sensor so that the sensitive portion is responsive to pressure applied by the object on the sensitive portion. Another disclosed example includes a field effect sensor that generates an electric field that is at least partially interrupted when an object contacts or comes in very close proximity to the sensitive portion. Automated movement of a door is controlled responsive to an indication of the presence of an object in a location where the object may become caught during automatic movement of the door.

    摘要翻译： 用于控制可自动移动的门板（22）的运动的组件（20）包括定位在门板（22）或门框架构件（24,26）中的至少一个上的传感器（30,32,34）。 敏感部分提供对象何时与敏感部分接触或非常接近敏感部分的指示。 在门或门框构件的区域内建立敏感部分，在自动门移动期间物体可能被卡住。 所公开的示例包括使用机电膜作为传感器，使得敏感部分响应于物体在敏感部分上施加的压力。 另一个公开的示例包括场效应传感器，其产生当物体接触或非常接近敏感部分时至少部分中断的电场。 响应于在门的自动移动期间物体可能被卡住的位置处的物体的存在的指示来控制门的自动运动。

    Vehicle device control system with a disabling feature
    8.
    发明授权
    Vehicle device control system with a disabling feature 有权
    车载设备控制系统具有禁用功能

    公开(公告)号：US09008861B2

    公开(公告)日：2015-04-14

    申请号：US13343977

    申请日：2012-01-05

    申请人： Takashi Saiki ,  Ryusuke Ishikawa ,  Takeshi Kumazaki

    发明人： Takashi Saiki ,  Ryusuke Ishikawa ,  Takeshi Kumazaki

    IPC分类号： G05D1/00 ,  B60R25/20 ,  B60R25/00 ,  G07C9/00

    CPC分类号： B60R25/2072 ,  B60R25/00 ,  G07C9/00309 ,  G07C2009/00365 ,  G07C2009/00388

    摘要： A vehicle-side unit transmits a first request signal WAKE periodically toward a portable unit, and transmits a second request signal CHLG at every predetermined transmission interval specific to the vehicle-side unit upon reception of a first response signal ACK from the portable unit in response to the transmitted WAKE. The portable unit is operable with power supplied from a battery. The portable unit transmits ACK upon reception of WAKE and becomes ready for reception of CHLG at a timing CHLG is transmitted in accordance with the transmission interval specific to the vehicle-side unit.

    摘要翻译： 车辆侧单元向便携式单元周期性地发送第一请求信号WAKE，并且在响应于来自便携式单元的第一响应信号ACK的接收时，以对于车辆单元特定的每个预定发送间隔发送第二请求信号CHLG 到发送的WAKE。 便携式单元可以用从电池供应的电力来操作。 便携式单元在接收到WAKE时发送ACK，并且在按照专用于车辆侧单元的传输间隔发送CHLG的定时准备好接收CHLG。

    Door assembly including a touch sensitive portion for controlling automated door movement
    9.
    发明授权
    Door assembly including a touch sensitive portion for controlling automated door movement 有权
    门组件包括用于控制自动门移动的触敏部分

    公开(公告)号：US08284071B2

    公开(公告)日：2012-10-09

    申请号：US12092155

    申请日：2006-09-12

    申请人： Pei-Yuan Peng ,  Jaime A. Rivera ,  Atsushi Yamada ,  Takashi Saiki

    发明人： Pei-Yuan Peng ,  Jaime A. Rivera ,  Atsushi Yamada ,  Takashi Saiki

    IPC分类号： G08B21/00

    CPC分类号： B66B13/26

    摘要： An assembly (20) for controlling movement of an automatically moveable door panel (22) includes a sensor (30, 32, 34) positioned on at least one of a door panel (22) or a door frame member (24, 26). The sensitive portion provides an indication of when an object is in contact with or in very close proximity to a sensitive portion. A sensitive portion is established over an area of the door or door frame member at which an object may become caught during automated door movement. A disclosed example includes using an electromechanical film as a sensor so that the sensitive portion is responsive to pressure applied by the object on the sensitive portion. Another disclosed example includes a field effect sensor that generates an electric field that is at least partially interrupted when an object contacts or comes in very close proximity to the sensitive portion. Automated movement of a door is controlled responsive to an indication of the presence of an object in a location where the object may become caught during automatic movement of the door.

    摘要翻译： 用于控制可自动移动的门板（22）的运动的组件（20）包括定位在门板（22）或门框架构件（24,26）中的至少一个上的传感器（30,32,34）。 敏感部分提供对象何时与敏感部分接触或非常接近敏感部分的指示。 在门或门框构件的区域内建立敏感部分，在自动门移动期间物体可能被卡住。 所公开的示例包括使用机电膜作为传感器，使得敏感部分响应于物体在敏感部分上施加的压力。 另一个公开的示例包括场效应传感器，其产生当物体接触或非常接近敏感部分时至少部分中断的电场。 响应于在门的自动移动期间物体可能被卡住的位置处的物体的存在的指示来控制门的自动运动。