公开(公告)号：US20120187408A1

公开(公告)日：2012-07-26

申请号：US13355340

申请日：2012-01-20

申请人： Tetsuhiro TANAKA ,  Takashi Ienaga ,  Ryu Komatsu ,  Erika Kato ,  Ryota Tajima ,  Yasuhiro Jinbo

发明人： Tetsuhiro TANAKA ,  Takashi Ienaga ,  Ryu Komatsu ,  Erika Kato ,  Ryota Tajima ,  Yasuhiro Jinbo

IPC分类号： H01L29/04 ,  H01L21/20 ,  H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/78678

摘要： An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm and lower than or equal to 2.33 g/cm3.

摘要翻译： 本发明的一个实施方案是具有大于或等于70nm且小于或等于100nm的厚度的微晶半导体膜，并且包括从微晶半导体膜的表面部分地突出的晶粒。 晶粒具有取向平面，并且包括尺寸为13nm以上的微晶。 此外，微晶半导体膜的膜密度高于或等于2.25g / cm 3，低于或等于2.35g / cm 3，优选高于或等于2.30g / cm 2且低于或等于2.33g / cm3。

公开(公告)号：US20120208360A1

公开(公告)日：2012-08-16

申请号：US13368379

申请日：2012-02-08

申请人： Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Takashi OHTSUKI ,  Ryota TAJIMA ,  Erika KATO

发明人： Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Takashi OHTSUKI ,  Ryota TAJIMA ,  Erika KATO

IPC分类号： H01L21/336 ,  H01L21/3065

CPC分类号： H01L29/66765 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/78648 ,  H01L29/78696

摘要： A microcrystalline semiconductor film is formed over a substrate using a plasma CVD apparatus which includes a reaction chamber in such a manner that a deposition gas and hydrogen are supplied to the reaction chamber in which the substrate is set between a first electrode and a second electrode; and plasma is generated in the reaction chamber by supplying high-frequency power to the first electrode. Note that the plasma density in a region overlapping with an end portion of the substrate in a region where the plasma is generated is set to be higher than that in a region which is positioned more on the inside than the region overlapping with the end portion of the substrate, so that the microcrystalline semiconductor film is formed over a region which is positioned more on the inside than the end portion of the substrate.

摘要翻译： 使用等离子体CVD装置在基板上形成微晶半导体膜，所述等离子体CVD装置包括反应室，使得将沉积气体和氢气供应到反应室中，其中基板设置在第一电极和第二电极之间; 并且通过向第一电极提供高频电力而在反应室中产生等离子体。 注意，在等离子体产生的区域中与衬底的端部重叠的区域中的等离子体密度设定为高于在位于更内侧的区域中的等离子体密度 使得微结晶半导体膜形成在位于比衬底的端部更靠内侧的区域上。

公开(公告)号：US20120021570A1

公开(公告)日：2012-01-26

申请号：US13184589

申请日：2011-07-18

申请人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Ryo TOKUMARU ,  Yuji EGI ,  Erika KATO ,  Miyako MORIKUBO

发明人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Ryo TOKUMARU ,  Yuji EGI ,  Erika KATO ,  Miyako MORIKUBO

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78696 ,  C30B25/105 ,  C30B25/183 ,  C30B29/06 ,  C30B29/08 ,  H01L29/04 ,  H01L29/78618 ,  H01L29/78648

摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.

摘要翻译： 在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至 填充混合晶粒之间的空间。 在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。 在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。

公开(公告)号：US20120270383A1

公开(公告)日：2012-10-25

申请号：US13433563

申请日：2012-03-29

申请人： Kanta ABE ,  Hidekazu MIYAIRI ,  Tetsuhiro TANAKA ,  Takashi IENAGA ,  Yoshitaka YAMAMOTO

发明人： Kanta ABE ,  Hidekazu MIYAIRI ,  Tetsuhiro TANAKA ,  Takashi IENAGA ,  Yoshitaka YAMAMOTO

IPC分类号： H01L21/263 ,  H01L21/28 ,  H01L21/20

CPC分类号： H01L29/04 ,  H01L21/28008 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/78696

摘要： Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b≧2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

摘要翻译： 提供一种半导体器件的制造方法，其中通过对含有氮的栅极绝缘膜进行等离子体氧化处理可以抑制薄膜晶体管的特性的劣化。 本发明的一个实施例是一种半导体器件的制造方法，该半导体器件包括薄膜晶体管，该薄膜晶体管包括栅电极，含氮的栅绝缘膜和微晶半导体膜中的沟道区。 该方法包括以下步骤：在包含氢的氧化气体气氛和含有氧原子的氧化气体的栅极绝缘膜上进行等离子体处理，并在栅极绝缘膜上形成微晶半导体膜。 满足式（1），a /b≥2和式（2），b> 0，其中，氢和氧化气体气氛中的氧化气体量分别为a和b。

公开(公告)号：US20110053358A1

公开(公告)日：2011-03-03

申请号：US12860175

申请日：2010-08-20

申请人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

发明人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/20

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US20110020989A1

公开(公告)日：2011-01-27

申请号：US12838023

申请日：2010-07-16

申请人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Hidekazu MIYAIRI ,  Mitsuhiro ICHIJO ,  Taichi NOZAWA

发明人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Hidekazu MIYAIRI ,  Mitsuhiro ICHIJO ,  Taichi NOZAWA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/28 ,  C23C16/45523 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78684

摘要： A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.

摘要翻译： 形成具有高结晶度的微晶半导体膜。 此外，具有优选的电特性和高可靠性的薄膜晶体管和包括薄膜晶体管的显示装置以高生产率制造。 以第一流量引入包含硅或锗的沉积气体的步骤，并且以固定速率引入氢气，并且以固定速率引入氢气，并且以第二流量引入含有硅或锗的沉积气体的步骤，从而 将含有硅或锗的氢气和沉积气体混合，供给高频电力。 因此，在基板上形成微晶半导体膜。

公开(公告)号：US20120115290A1

公开(公告)日：2012-05-10

申请号：US13283809

申请日：2011-10-28

申请人： Tetsuhiro TANAKA

发明人： Tetsuhiro TANAKA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78696 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32018 ,  H01J37/3244 ,  H01J37/32449 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The crystalline semiconductor film is formed following steps that supplying a film formation gas to a second gas diffusion area from a gas introduction port provided in an upper electrode; supplying the film formation gas to a first gas diffusion area from the second gas diffusion area through holes provided in a dispersion plate between the first gas diffusion area and the second gas diffusion area; supplying the film formation gas into a treatment room from the first gas diffusion area through holes in a shower plate between the first gas diffusion area and the treatment room; generating glow discharge plasma by supplying high frequency electricity from an electrode surface of the upper electrode; generating crystal nuclei on a substrate provided over a lower electrode facing the upper electrode; and growing the crystal nuclei. A portion of the dispersion plate which faces the gas introduction port has no hole.

摘要翻译： 结晶半导体膜形成如下步骤：从设置在上电极中的气体导入口向第二气体扩散区域供给成膜气体; 通过设置在第一气体扩散区域和第二气体扩散区域之间的分散板中的孔从第二气体扩散区域向第一气体扩散区域供给成膜气体; 从所述第一气体扩散区域通过所述第一气体扩散区域和所述处理室之间的喷淋板的孔中的所述成膜气体供给到处理室; 通过从上电极的电极表面提供高频电力产生辉光放电等离子体; 在设置在面向上电极的下电极上的基板上产生晶核; 并生长晶核。 面对气体导入口的分散板的一部分没有孔。

公开(公告)号：US20120289005A1

公开(公告)日：2012-11-15

申请号：US13466480

申请日：2012-05-08

申请人： Tetsuhiro TANAKA ,  Shinya SASAGAWA

发明人： Tetsuhiro TANAKA ,  Shinya SASAGAWA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/788

摘要： A thin film transistor having low off-state current and excellent electrical characteristics can be manufactured. In an inverted staggered thin film transistor including a semiconductor film in which at least a microcrystalline semiconductor region and an amorphous semiconductor region are stacked, a conductive film and an etching protective film are stacked over the semiconductor film; a mask is formed over the etching protective film; first etching treatment in which the etching protective film, the conductive film, and the amorphous semiconductor region are partly etched is performed; then, the mask is removed. Next, second etching treatment in which the exposed amorphous semiconductor region and the microcrystalline semiconductor region are partly dry-etched is performed using the etched etching protective film as a mask so that the microcrystalline semiconductor region is partly exposed to form a back channel region.

摘要翻译： 可以制造具有低截止电流和优异电特性的薄膜晶体管。 在包括半导体膜的倒置交错薄膜晶体管中，其中层叠有至少一个微晶半导体区域和非晶半导体区域，在半导体膜上层叠导电膜和蚀刻保护膜; 在蚀刻保护膜上形成掩模; 执行其中蚀刻保护膜，导电膜和非晶半导体区域被部分蚀刻的第一蚀刻处理; 然后，去除面具。 接下来，使用蚀刻蚀刻保护膜作为掩模进行其中暴露的非晶半导体区域和微晶半导体区域被部分干法蚀刻的第二蚀刻处理，使得微晶半导体区域部分地暴露以形成背沟道区域。

公开(公告)号：US20110217811A1

公开(公告)日：2011-09-08

申请号：US13035037

申请日：2011-02-25

申请人： Tetsuhiro TANAKA ,  Tomokazu YOKOI ,  Koji DAIRIKI

发明人： Tetsuhiro TANAKA ,  Tomokazu YOKOI ,  Koji DAIRIKI

IPC分类号： H01L31/0352 ,  H01L21/20 ,  H01L21/336

CPC分类号： H01L31/1136 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/14692 ,  H01L31/03685 ,  Y02E10/545 ,  Y02E10/548

摘要： A method for manufacturing a microcrystalline semiconductor film having high crystallinity is provided. A method for manufacturing a semiconductor device which has favorable electric characteristics with high productivity is provided. After a first microcrystalline semiconductor film is formed over a substrate, treatment for flattening a surface of the first microcrystalline semiconductor film is performed. Then, treatment for removing an amorphous semiconductor region on a surface side of the flattened first microcrystalline semiconductor film is performed so that a second microcrystalline semiconductor film having high crystallinity and flatness is formed. After that, a third microcrystalline semiconductor film is formed over the second microcrystalline semiconductor film.

摘要翻译： 提供了一种制造具有高结晶度的微晶半导体膜的方法。 提供了一种具有良好的电特性，高生产率的半导体装置的制造方法。 在基板上形成第一微晶半导体膜之后，进行使第一微晶半导体膜的表面变平的处理。 然后，进行用于除去平坦化的第一微晶半导体膜的表面侧的非晶半导体区域的处理，使得形成具有高结晶度和平坦度的第二微晶半导体膜。 之后，在第二微晶半导体膜上形成第三微晶半导体膜。

公开(公告)号：US20110111557A1

公开(公告)日：2011-05-12

申请号：US12938527

申请日：2010-11-03

申请人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

发明人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

IPC分类号： H01L21/44

CPC分类号： H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

摘要翻译： 本发明的目的是高速驱动半导体器件或提高半导体器件的可靠性。 在半导体器件的制造方法中，其中在绝缘性的衬底上形成栅电极，在栅电极上形成栅极绝缘膜，并且在栅极绝缘膜上形成氧化物半导体膜，栅极 通过使用高密度等离子体的沉积处理形成绝缘膜。 因此，栅极绝缘膜中的悬挂键减少，并且栅极绝缘膜和氧化物半导体之间的界面的质量得到改善。