公开(公告)号：US20140077161A1

公开(公告)日：2014-03-20

申请号：US14002663

申请日：2012-03-02

申请人： Xiangfeng Duan ,  Yu Huang ,  Lei Liao ,  Jingwei Bai

发明人： Xiangfeng Duan ,  Yu Huang ,  Lei Liao ,  Jingwei Bai

IPC分类号： H01L29/40 ,  H01L29/16 ,  H01L29/06 ,  H01L29/775

CPC分类号： H01L29/408 ,  B82Y10/00 ,  G11C2213/35 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4925 ,  H01L29/4958 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/778

摘要： A graphene transistor includes: (1) a substrate; (2) a source electrode disposed on the substrate; (3) a drain electrode disposed on the substrate; (4) a graphene channel disposed on the substrate and extending between the source electrode and the drain electrode; and (5) a top gate disposed on the graphene channel and including a nanostructure.

摘要翻译： 石墨烯晶体管包括：（1）衬底; （2）设置在基板上的源电极; （3）设置在基板上的漏电极; （4）设置在所述基板上并在所述源电极和所述漏电极之间延伸的石墨烯通道; 和（5）设置在石墨烯通道上并包括纳米结构的顶栅。

公开(公告)号：US09012882B2

公开(公告)日：2015-04-21

申请号：US13576519

申请日：2011-01-28

申请人： Xiangfeng Duan ,  Yu Huang ,  Jingwei Bai

发明人： Xiangfeng Duan ,  Yu Huang ,  Jingwei Bai

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/04 ,  G01N27/414

CPC分类号： H01L29/78684 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  G01N27/4145 ,  G01N27/4146 ,  H01L29/66742 ,  H01L29/78696 ,  Y10T428/24273 ,  Y10T428/24331 ,  Y10T428/24479

摘要： A graphene nanomesh includes a sheet of graphene having a plurality of periodically arranged apertures, wherein the plurality of apertures have a substantially uniform periodicity and substantially uniform neck width. The graphene nanomesh can open up a large band gap in a sheet of graphene to create a semiconducting thin film. The periodicity and neck width of the apertures formed in the graphene nanomesh may be tuned to alter the electrical properties of the graphene nanomesh. The graphene nanomesh is prepared with block copolymer lithography. Graphene nanomesh field-effect transistors (FETs) can support currents nearly 100 times greater than individual graphene nanoribbon devices and the on-off ratio, which is comparable with values achieved in nanoribbon devices, can be tuned by varying the neck width. The graphene nanomesh may also be incorporated into FET-type sensor devices.

摘要翻译： 石墨烯纳米片包括具有多个周期性布置的孔的石墨烯片，其中所述多个孔具有基本均匀的周期性和基本上均匀的颈部宽度。 石墨烯纳米粒子可以在一片石墨烯中打开大的带隙以产生半导体薄膜。 可以调节在石墨烯纳米颗粒中形成的孔的周期性和颈部宽度以改变石墨烯纳米粒子的电性能。 用嵌段共聚物光刻法制备石墨烯纳米粒子。 石墨烯纳米粒子场效应晶体管（FET）可以支持比单独的石墨烯纳米带器件大近100倍的电流，并且可以通过改变颈部宽度来调节与纳米棒器件中实现的值相当的开关比。 石墨烯纳米粒子也可以并入FET型传感器装置中。

公开(公告)号：US20120301953A1

公开(公告)日：2012-11-29

申请号：US13576519

申请日：2011-01-28

申请人： Xiangfeng Duan ,  Yu Huang ,  Jingwei Bai

发明人： Xiangfeng Duan ,  Yu Huang ,  Jingwei Bai

IPC分类号： H01B1/04 ,  C12M1/40 ,  C01B31/00 ,  H01L29/08 ,  H01L21/3065 ,  B32B3/24 ,  B32B3/30 ,  G01N27/00 ,  H01L21/308 ,  B82Y30/00

CPC分类号： H01L29/78684 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  G01N27/4145 ,  G01N27/4146 ,  H01L29/66742 ,  H01L29/78696 ,  Y10T428/24273 ,  Y10T428/24331 ,  Y10T428/24479

摘要： A graphene nanomesh includes a sheet of graphene having a plurality of periodically arranged apertures, wherein the plurality of apertures have a substantially uniform periodicity and substantially uniform neck width. The graphene nanomesh can open up a large band gap in a sheet of graphene to create a semiconducting thin film. The periodicity and neck width of the apertures formed in the graphene nanomesh may be tuned to alter the electrical properties of the graphene nanomesh. The graphene nanomesh is prepared with block copolymer lithography. Graphene nanomesh field-effect transistors (FETs) can support currents nearly 100 times greater than individual graphene nanoribbon devices and the on-off ratio, which is comparable with values achieved in nanoribbon devices, can be tuned by varying the neck width. The graphene nanomesh may also be incorporated into FET-type sensor devices.

摘要翻译： 石墨烯纳米片包括具有多个周期性布置的孔的石墨烯片，其中所述多个孔具有基本均匀的周期性和基本上均匀的颈部宽度。 石墨烯纳米粒子可以在一片石墨烯中打开大的带隙以产生半导体薄膜。 可以调节在石墨烯纳米颗粒中形成的孔的周期性和颈部宽度以改变石墨烯纳米粒子的电性能。 用嵌段共聚物光刻法制备石墨烯纳米粒子。 石墨烯纳米粒子场效应晶体管（FET）可以支持比单独的石墨烯纳米带器件大近100倍的电流，并且可以通过改变颈部宽度来调节与纳米棒器件中实现的值相当的开关比。 石墨烯纳米粒子也可以并入FET型传感器装置中。

公开(公告)号：US20170194144A1

公开(公告)日：2017-07-06

申请号：US15510618

申请日：2015-09-10

申请人： Xiangfeng Duan ,  Yu Huang ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L21/02 ,  B05D1/18 ,  B05D1/00 ,  H01L21/477 ,  H01L21/428

CPC分类号： H01L21/02628 ,  B05D1/005 ,  B05D1/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/428 ,  H01L21/477 ,  H01L29/78681 ,  H01L29/78684

摘要： A method of forming a thin film includes: (1) providing an ink composition including nanoplates of a layered material disposed in a liquid dispersion medium; (2) applying the ink composition over a substrate to form a coating; and (3) annealing the coating to form a thin film of the nanoplates over the substrate.

公开(公告)号：US07595260B2

公开(公告)日：2009-09-29

申请号：US11543326

申请日：2006-10-04

申请人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L21/30 ,  H01L21/86

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor may be at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may have a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof.

摘要翻译： 体掺杂半导体可以是以下至少一种：单晶，细长和体掺杂半导体，其沿​​着其纵向轴线的任何点处具有小于500纳米的最大横截面尺寸， 具有至少一部分具有小于500纳米的最小宽度的立体和体掺杂半导体。 这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米的最小宽度，或 小于40纳米，或小于20纳米，或小于10纳米，甚至小于5纳米。 这样的半导体可以在生长期间被掺杂。 这样的半导体可以是设备的一部分，其可以包括各种设备中的任何一种以及它们的组合。

公开(公告)号：US20070032051A1

公开(公告)日：2007-02-08

申请号：US11543336

申请日：2006-10-04

申请人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01G9/20

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US20060175601A1

公开(公告)日：2006-08-10

申请号：US11172408

申请日：2005-06-30

申请人： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

发明人： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

IPC分类号： H01L31/109

CPC分类号： C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

公开(公告)号：US20050164432A1

公开(公告)日：2005-07-28

申请号：US11082372

申请日：2005-03-17

申请人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L29/73 ,  C30B11/00 ,  C30B25/00 ,  G01N27/12 ,  G01N27/414 ,  G01N33/543 ,  G11C13/02 ,  H01L21/329 ,  H01L21/331 ,  H01L23/532 ,  H01L27/10 ,  H01L29/06 ,  H01L29/207 ,  H01L29/267 ,  H01L29/88 ,  H01L33/06 ,  H01L33/18 ,  H01L51/00 ,  H01L51/30 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US07915151B2

公开(公告)日：2011-03-29

申请号：US11543353

申请日：2006-10-04

申请人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01G9/20 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.

摘要翻译： 体积掺杂半导体，其为以下至少一个：单晶，细长体积掺杂半导体，其沿​​着其纵向轴线的任何点具有小于500纳米的最大横截面尺寸， 具有至少一部分具有小于500纳米的最小宽度的单体和体掺杂半导体。 这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度 小于20纳米，或小于10纳米，甚至小于5纳米。 这样的半导体可以在生长期间被掺杂。 这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组装技术来从这种半导体制造设备。

公开(公告)号：US20100155698A1

公开(公告)日：2010-06-24

申请号：US12459177

申请日：2009-06-26

申请人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

发明人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

摘要翻译： 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。