公开(公告)号：US5534108A

公开(公告)日：1996-07-09

申请号：US400468

申请日：1995-03-07

申请人： Xue-Yu Qian ,  Gerald Yin ,  Graham W. Hills ,  Robert Steger

发明人： Xue-Yu Qian ,  Gerald Yin ,  Graham W. Hills ,  Robert Steger

IPC分类号： H01J37/32 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H05H1/46

摘要： A magnetic field enhanced plasma etch reactor system and method of operation is disclosed. In the system and operation, modulated sinusoidal currents are generated and applied 90.degree. out of phase to opposing pairs of series connected electromagnets to produce a modified rotating magnetic field parallel to a substrate processed in the system. The modification of the rotating magnetic field, in turn, results in an improvement in the uniformity of the etch pattern over the upper surface of the substrate.

摘要翻译： 公开了一种磁场增强等离子体蚀刻反应器系统和操作方法。 在系统和操作中，产生调制的正弦电流并与相对的串联电磁体对相差90°，产生与系统中处理的衬底平行的改进的旋转磁场。 反过来，旋转磁场的改变导致蚀刻图案在衬底的上表面上的均匀性的改善。

公开(公告)号：US20110305544A1

公开(公告)日：2011-12-15

申请号：US13016742

申请日：2011-01-28

申请人： AiHua Chen ,  Ryoji Todaka ,  Gerald Yin

发明人： AiHua Chen ,  Ryoji Todaka ,  Gerald Yin

IPC分类号： H01L21/67 ,  H05B3/06

CPC分类号： H01L21/6719 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584

摘要： A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable processing stations positioned therein and wherein the rotatable processing stations each process a semiconductor work piece.

摘要翻译： 公开了一种用于半导体工件和相关方法的处理装置，其包括具有内部空腔的处理室，并且其中设置有多个可旋转的处理站，并且其中可旋转的处理站各自处理半导体工件。

公开(公告)号：US06858153B2

公开(公告)日：2005-02-22

申请号：US10011368

申请日：2001-11-05

申请人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： H01L21/302 ,  A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  C23F1/00

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

公开(公告)号：US06352049B1

公开(公告)日：2002-03-05

申请号：US09119417

申请日：1998-07-20

申请人： Gerald Yin ,  Arnold Kolandenko ,  Hong Ching Shan ,  Peter Loewenhardt ,  Chii Lee ,  Yan Ye ,  Xueyan Qian ,  Songlin Xu ,  Arthur Chen ,  Arthur Sato ,  Michael Grimbergen ,  Diana Ma ,  John Yamartino ,  Chun Yan ,  Wade Zawalski

发明人： Gerald Yin ,  Arnold Kolandenko ,  Hong Ching Shan ,  Peter Loewenhardt ,  Chii Lee ,  Yan Ye ,  Xueyan Qian ,  Songlin Xu ,  Arthur Chen ,  Arthur Sato ,  Michael Grimbergen ,  Diana Ma ,  John Yamartino ,  Chun Yan ,  Wade Zawalski

IPC分类号： C23E1648

CPC分类号： H01J37/32871

摘要： The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

摘要翻译： 本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。 本发明具有处理室和至少一个辅助室。 辅助室能够产生旁路血浆并将其输送到处理室。 为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。 附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。

公开(公告)号：US20070032097A1

公开(公告)日：2007-02-08

申请号：US11441291

申请日：2006-05-24

申请人： AiHua Chen ,  Ryoji Todaka ,  Gerald Yin

发明人： AiHua Chen ,  Ryoji Todaka ,  Gerald Yin

IPC分类号： H01L21/00

CPC分类号： H01L21/6719 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584

摘要： A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable processing stations positioned therein and wherein the rotatable processing stations each process a semiconductor work piece.

摘要翻译： 公开了一种用于半导体工件和相关方法的处理装置，其包括具有内部空腔的处理室，并且其中设置有多个可旋转的处理站，并且其中可旋转的处理站各自处理半导体工件。

公开(公告)号：US06270617B1

公开(公告)日：2001-08-07

申请号：US08778051

申请日：1997-01-02

申请人： Gerald Yin ,  Diana Xiabing Ma ,  Peter Loewenhardt ,  Philip Salzman ,  Allen Zhao ,  Hiroji Hanawa

发明人： Gerald Yin ,  Diana Xiabing Ma ,  Peter Loewenhardt ,  Philip Salzman ,  Allen Zhao ,  Hiroji Hanawa

IPC分类号： H05H100

CPC分类号： H01J37/321

摘要： An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low. In another aspect of the invention, the RF signal applicator has an annular distribution characterized by an effective mean radius, the plasma having a radial ion density distribution with respect to an axis of symmetry of the ceiling which is center-high for a lesser mean radius of the signal applicator and center-low for a greater mean radius of the signal applicator, the mean radius of the signal applicator being intermediate the greater and lesser mean radii such that the radial ion density distribution is neither center-high nor center-low.

摘要翻译： 用于在具有多半圆顶形天花板的反应室中处理半导体晶片的RF等离子体反应器和用于将工艺气体供应到室中的气体入口包括在天花板附近的顶置RF信号施加器，用于将RF信号施加到 通过天花板保持腔室中的处理气体的等离子体，等离子体在基座的平面附近具有径向离子密度分布，该基座的平面是中心高的，用于在基座上方的天花板的更高的高度，并且是中心的 对于较小的高度，天花板的高度在较大和较小的高度之间，使得径向离子密度分布既不是中心高也不是中心低。 在本发明的另一方面，RF信号施加器具有由有效平均半径表征的环形分布，等离子体相对于天花板的对称轴线具有径向离子密度分布，其对于较小的平均半径为中心高 并且信号施加器的平均半径更大，信号施加器的平均半径在较大和较小的平均半径之间，使得径向离子密度分布既不是中心高也不是中心低。

公开(公告)号：US5990017A

公开(公告)日：1999-11-23

申请号：US104550

申请日：1998-06-25

申请人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US08366829B2

公开(公告)日：2013-02-05

申请号：US11772726

申请日：2007-07-02

申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

公开(公告)号：US20100271745A1

公开(公告)日：2010-10-28

申请号：US12502988

申请日：2009-07-14

申请人： Jinyuan CHEN ,  Liang Ouyang ,  Junichi Arami ,  Xueyu Qian ,  Zhiyou Du ,  Gerald Yin

发明人： Jinyuan CHEN ,  Liang Ouyang ,  Junichi Arami ,  Xueyu Qian ,  Zhiyou Du ,  Gerald Yin

IPC分类号： H01L21/683 ,  C23F1/08 ,  H05K13/00

CPC分类号： H01L21/6831 ,  Y10T29/49117

摘要： An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices.

摘要翻译： 描述了一种静电吸盘装置，其中静电卡盘和支撑件由高电阻率，高热导率和低RF能量损耗介电材料制成。 这种静电卡盘装置的优点是晶片表面的电磁场分布比传统的静电卡盘装置更均匀。 结果，与传统的静电卡盘装置相比，晶片蚀刻速率，特别是晶片边缘蚀刻速率不均匀性显着提高。

公开(公告)号：US20100126667A1

公开(公告)日：2010-05-27

申请号：US12498295

申请日：2009-07-06

申请人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

发明人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01L21/68764 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/68771

摘要： A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

摘要翻译： 描述了去耦合的电容CVD反应器，其提供改进的CVD能力，包括在较低温度下处理，执行交替沉积和蚀刻步骤，以及执行腔室的原位清洁，而不需要远程等离子体源。 两个RF频率耦合到基座，而阳极接地。 操作高频RF源以控制等离子体密度，同时操作低频RF源以控制基板上的物质轰击，以便控制被沉积的膜的性质。 此外，可以控制两个RF源以及供应到腔室的气体的选择，以沉积模式，局部蚀刻模式，蚀刻模式或清洁模式来操作腔室。