Angular velocity detecting device
    7.
    发明授权
    Angular velocity detecting device 有权
    角速度检测装置

    公开(公告)号:US08327706B2

    公开(公告)日:2012-12-11

    申请号:US12832965

    申请日:2010-07-08

    IPC分类号: G01P15/08

    摘要: A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.

    摘要翻译: 提供了一种高性能角速率检测装置。 包括驱动框架和科里奥利框架的驱动部分通过共享固定端并且沿与驱动方向正交的方向延伸的至少两个固定梁悬浮,从而使驱动部分振动。 即使当通过安装或热波动使基板变形时,产生到固定梁和支撑梁的内应力也小,从而保持振动状态,例如共振频率和振动幅度恒定。 因此,可以获得对安装环境变化坚固的高性能角速度检测装置。

    Device and data processing method employing the device
    8.
    发明授权
    Device and data processing method employing the device 失效
    使用该设备的设备和数据处理方法

    公开(公告)号:US07405588B2

    公开(公告)日:2008-07-29

    申请号:US10933272

    申请日:2004-09-03

    IPC分类号: H03K19/173

    摘要: The present invention relates to an LSI in which functions can be changed, and realizes, particularly, a system LSI in which functions are changed by changing connections of the circuit by use of MEMS switches. A bistable MEMS switch which can maintain states, and exhibits optimal stitching property, i.e., the switch has a very small resistance of several Ω or less in an on-state, and has an infinite resistance in an off-state; is employed. An element in which functions can be changed during operation, is produced by utilizing a wiring layer of a CMOS semiconductor to form the MEMS switch. A semiconductor device exhibiting high-degree of freedom for changing functions, high-speed, and having small area, is realized.

    摘要翻译: 本发明涉及可以改变功能的LSI,特别是实现通过使用MEMS开关改变电路的连接来改变功能的系统LSI。 可以保持状态并且表现出最佳缝合性能的双稳态MEMS开关,即开关在导通状态下具有几欧姆或更小的非常小的电阻,并且在断开状态下具有无限电阻; 被雇用。 通过使用CMOS半导体的布线层来形成功能可以在操作期间改变的元件来形成MEMS开关。 实现了具有高自由度,高速度,小面积化的高自由度的半导体装置。

    Actuator for Manipulation of Liquid Droplets
    9.
    发明申请
    Actuator for Manipulation of Liquid Droplets 失效
    用于操纵液滴的致动器

    公开(公告)号:US20080018709A1

    公开(公告)日:2008-01-24

    申请号:US11737791

    申请日:2007-04-20

    IPC分类号: B41J2/05

    摘要: A liquid conveying substrate comprises: rectangular electrodes which are disposed on the substrate surface and whose surfaces are covered with a dielectric with a water repellent surface; first axial electrode columns where the rectangular electrodes are coupled in an x direction; and second axial electrode columns where the rectangular electrodes are coupled in a y direction. Accordingly, electrodes necessary for conveying liquid droplets can be arranged on one substrate, and the number of mechanisms for controlling the potential can be suppressed.

    摘要翻译: 液体输送基板包括:矩形电极,其设置在基板表面上,其表面被具有防水表面的电介质覆盖; 第一轴向电极柱,其中矩形电极沿x方向耦合; 以及第二轴向电极列,其中矩形电极在y方向上耦合。 因此,可以在一个基板上配置用于输送液滴所必需的电极,并且可以抑制用于控制电位的机构的数量。

    Manufacturing method of semiconductor device
    10.
    发明授权
    Manufacturing method of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号:US07199022B2

    公开(公告)日:2007-04-03

    申请号:US10814627

    申请日:2004-04-01

    IPC分类号: H01L21/76

    CPC分类号: H01L21/76224 Y10S438/907

    摘要: In order to achieve an isolation trench formation process according to the present invention in which the structure of a silicon nitride film liner can be easily controlled and to allow both of reduction of the device feature length and reduction in stress occurring in an isolation trench, the silicon nitride film liner is first deposited on the inner wall of the trench formed on a silicon substrate. The upper surface of a first embedded insulator film for filling the inside of the trench is recessed downward so as to expose an upper end portion of the silicon nitride film liner. Next, the exposed portion of the silicon nitride film liner is converted into non-silicon-nitride type insulator film, such as a silicon oxide film. A second embedded insulator film is then deposited on the upper portion of the first embedded insulator film, and the deposited surface is then planarized.

    摘要翻译: 为了实现根据本发明的隔离沟槽形成方法,其中可以容易地控制氮化硅膜衬垫的结构并且允许器件特征长度的减小和在隔离沟槽中发生的应力的减小, 氮化硅膜衬垫首先沉积在形成在硅衬底上的沟槽的内壁上。 用于填充沟槽内部的第一嵌入式绝缘体膜的上表面向下凹入以暴露氮化硅膜衬垫的上端部分。 接下来,将氮化硅膜衬垫的露出部分转换成诸如氧化硅膜的非氮化硅型绝缘膜。 然后将第二嵌入式绝缘膜沉积在第一嵌入式绝缘膜的上部上,然后将沉积的表面平坦化。