-
公开(公告)号：US08241954B2
公开(公告)日：2012-08-14
申请号：US11949133
申请日：2007-12-03
IPC分类号： H01L21/00
CPC分类号： H01L23/5389 , H01L23/3114 , H01L24/18 , H01L24/24 , H01L24/48 , H01L24/73 , H01L24/82 , H01L25/0657 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/24145 , H01L2224/24146 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48464 , H01L2224/73265 , H01L2224/73267 , H01L2224/94 , H01L2225/06506 , H01L2225/06524 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15184 , H01L2924/15311 , H01L2924/30105 , H01L2224/83 , H01L2224/82 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a wafer level chip scale package (WLCSP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLCSP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs.
摘要翻译： 在晶片级芯片级封装（WLCSP）中，半导体管芯具有在其有源表面上形成的有源电路和接触焊盘。 第二半导体管芯设置在第一半导体管芯上。 第一再分配层（RDL）电连接第一和第二半导体管芯。 第三半导体管芯设置在第二半导体管芯上。 第二和第三半导体管芯用粘合剂附着。 第二RDL电连接第一，第二和第三半导体管芯。 第二个RDL可以是接合线。 钝化层隔离RDL和第二和第三半导体管芯。 在WLCSP的表面上形成多个焊料凸块。 焊料凸块形成在电连接到RDL上的凸起下金属化处。 焊料凸块通过第一和第二RDL电连接到第一，第二或第三半导体管芯。
-
2.发明授权Semiconductor device and method of forming prefabricated heat spreader frame with embedded semiconductor die 有权具有嵌入式半导体芯片的预制散热器框架的半导体装置和方法公开(公告)号：US08518749B2
公开(公告)日：2013-08-27
申请号：US12489177
申请日：2009-06-22
CPC分类号： H01L23/562 , H01L21/4871 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/78 , H01L23/3114 , H01L23/3128 , H01L23/34 , H01L23/3672 , H01L23/4334 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/32 , H01L24/48 , H01L24/95 , H01L2224/0401 , H01L2224/04105 , H01L2224/1134 , H01L2224/13022 , H01L2224/16 , H01L2224/16235 , H01L2224/20 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated.
摘要翻译： 通过将预制散热器框架安装在临时衬底上来制造半导体器件。 散热器框架包括平板上的垂直体。 将半导体管芯安装到散热器框架上用于散热。 在垂直体和半导体管芯周围沉积密封剂，同时留下露出的半导体管芯上的接触焊盘。 可以使用晶片级直接/顶栅模制工艺或晶片级膜辅助模制工艺来沉积密封剂。 在半导体管芯上形成互连结构。 互连结构包括形成在半导体管芯上的第一导电层，形成在第一导电层上的绝缘层，以及形成在第一导电层和绝缘层上的第二导电层。 去除临时衬底，将切割带施加到散热器框架，并且半导体管芯被切割。
-
公开(公告)号：US09142514B2
公开(公告)日：2015-09-22
申请号：US13546726
申请日：2012-07-11
IPC分类号： H01L21/00 , H01L23/538 , H01L23/00 , H01L25/065 , H01L25/00 , H01L23/31
CPC分类号： H01L23/5389 , H01L23/3114 , H01L24/18 , H01L24/24 , H01L24/48 , H01L24/73 , H01L24/82 , H01L25/0657 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/24145 , H01L2224/24146 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48464 , H01L2224/73265 , H01L2224/73267 , H01L2224/94 , H01L2225/06506 , H01L2225/06524 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15184 , H01L2924/15311 , H01L2924/30105 , H01L2224/83 , H01L2224/82 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a wafer level chip scale package (WLCSP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLCSP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs.
摘要翻译： 在晶片级芯片级封装（WLCSP）中，半导体管芯具有在其有源表面上形成的有源电路和接触焊盘。 第二半导体管芯设置在第一半导体管芯上。 第一再分配层（RDL）电连接第一和第二半导体管芯。 第三半导体管芯设置在第二半导体管芯上。 第二和第三半导体管芯用粘合剂附着。 第二RDL电连接第一，第二和第三半导体管芯。 第二个RDL可以是接合线。 钝化层隔离RDL和第二和第三半导体管芯。 在WLCSP的表面上形成多个焊料凸块。 焊料凸块形成在电连接到RDL上的凸起下金属化处。 焊料凸块通过第一和第二RDL电连接到第一，第二或第三半导体管芯。
-
公开(公告)号：US20120276691A1
公开(公告)日：2012-11-01
申请号：US13546726
申请日：2012-07-11
IPC分类号： H01L21/60
CPC分类号： H01L23/5389 , H01L23/3114 , H01L24/18 , H01L24/24 , H01L24/48 , H01L24/73 , H01L24/82 , H01L25/0657 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/24145 , H01L2224/24146 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48464 , H01L2224/73265 , H01L2224/73267 , H01L2224/94 , H01L2225/06506 , H01L2225/06524 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15184 , H01L2924/15311 , H01L2924/30105 , H01L2224/83 , H01L2224/82 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a wafer level chip scale package (WLSCP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLSCP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs.
摘要翻译： 在晶片级芯片级封装（WLSCP）中，半导体管芯具有在其有源表面上形成的有源电路和接触焊盘。 第二半导体管芯设置在第一半导体管芯上。 第一再分配层（RDL）电连接第一和第二半导体管芯。 第三半导体管芯设置在第二半导体管芯上。 第二和第三半导体管芯用粘合剂附着。 第二RDL电连接第一，第二和第三半导体管芯。 第二个RDL可以是接合线。 钝化层隔离RDL和第二和第三半导体管芯。 在WLSCP的表面上形成多个焊料凸块。 焊料凸块形成在电连接到RDL上的凸起下金属化处。 焊料凸块通过第一和第二RDL电连接到第一，第二或第三半导体管芯。
-
5.发明申请Semiconductor Device and Method of Forming Prefabricated Heat Spreader Frame with Embedded Semiconductor Die 有权半导体器件及嵌入式半导体模具预制散热器框架的制作方法公开(公告)号：US20100320588A1
公开(公告)日：2010-12-23
申请号：US12489177
申请日：2009-06-22
IPC分类号： H01L23/48 , H01L21/768 , H01L23/36
CPC分类号： H01L23/562 , H01L21/4871 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/78 , H01L23/3114 , H01L23/3128 , H01L23/34 , H01L23/3672 , H01L23/4334 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/32 , H01L24/48 , H01L24/95 , H01L2224/0401 , H01L2224/04105 , H01L2224/1134 , H01L2224/13022 , H01L2224/16 , H01L2224/16235 , H01L2224/20 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated.
摘要翻译： 通过将预制散热器框架安装在临时衬底上来制造半导体器件。 散热器框架包括平板上的垂直体。 将半导体管芯安装到散热器框架上用于散热。 在垂直体和半导体管芯周围沉积密封剂，同时留下露出的半导体管芯上的接触焊盘。 可以使用晶片级直接/顶栅模制工艺或晶片级膜辅助模制工艺来沉积密封剂。 在半导体管芯上形成互连结构。 互连结构包括形成在半导体管芯上的第一导电层，形成在第一导电层上的绝缘层，以及形成在第一导电层和绝缘层上的第二导电层。 去除临时衬底，将切割带施加到散热器框架，并且半导体管芯被切割。
-
公开(公告)号：US20090140441A1
公开(公告)日：2009-06-04
申请号：US11949133
申请日：2007-12-03
IPC分类号： H01L23/538 , H01L21/00
CPC分类号： H01L23/5389 , H01L23/3114 , H01L24/18 , H01L24/24 , H01L24/48 , H01L24/73 , H01L24/82 , H01L25/0657 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/24145 , H01L2224/24146 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48464 , H01L2224/73265 , H01L2224/73267 , H01L2224/94 , H01L2225/06506 , H01L2225/06524 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15184 , H01L2924/15311 , H01L2924/30105 , H01L2224/83 , H01L2224/82 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a wafer level chip scale package (WLSCP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLSCP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs.
摘要翻译： 在晶片级芯片级封装（WLSCP）中，半导体管芯具有在其有源表面上形成的有源电路和接触焊盘。 第二半导体管芯设置在第一半导体管芯上。 第一再分配层（RDL）电连接第一和第二半导体管芯。 第三半导体管芯设置在第二半导体管芯上。 第二和第三半导体管芯用粘合剂附着。 第二RDL电连接第一，第二和第三半导体管芯。 第二个RDL可以是接合线。 钝化层隔离RDL和第二和第三半导体管芯。 在WLSCP的表面上形成多个焊料凸点。 焊料凸块形成在电连接到RDL上的凸起下金属化处。 焊料凸块通过第一和第二RDL电连接到第一，第二或第三半导体管芯。
-
公开(公告)号：US09922955B2
公开(公告)日：2018-03-20
申请号：US12717335
申请日：2010-03-04
IPC分类号： H01L25/065 , H01L21/48 , H01L23/498 , H01L23/00 , H01L23/52
CPC分类号： H01L25/0657 , H01L21/4853 , H01L23/49816 , H01L23/52 , H01L24/73 , H01L24/96 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73204 , H01L2224/73265 , H01L2924/01322 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/18161 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor wafer has a plurality of semiconductor die. First and second conductive layers are formed over opposing surfaces of the semiconductor die, respectively. Each semiconductor die constitutes a WLCSP. A TSV is formed through the WLCSP. A semiconductor component is mounted to the WLCSP. The first semiconductor component is electrically connected to the first conductive layer. A first bump is formed over the first conductive layer, and a second bump is formed over the second conductive layer. An encapsulant is deposited over the first bump and first semiconductor component. A second semiconductor component is mounted to the first bump. The second semiconductor component is electrically connected to the first semiconductor component and WLCSP through the first bump and TSV. A third semiconductor component is mounted to the first semiconductor component, and a fourth semiconductor component is mounted to the third semiconductor component.
-
公开(公告)号：US08502376B2
公开(公告)日：2013-08-06
申请号：US13101657
申请日：2011-05-05
IPC分类号： H01L23/498
CPC分类号： H01L24/85 , H01L21/6835 , H01L24/24 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/83 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L2221/68345 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05026 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05571 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/13008 , H01L2224/16 , H01L2224/24227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48464 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2224/82001 , H01L2224/83191 , H01L2224/83856 , H01L2224/85001 , H01L2224/85051 , H01L2224/85986 , H01L2224/92244 , H01L2225/06506 , H01L2225/06527 , H01L2225/06582 , H01L2225/06586 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/1433 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2224/85186 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2224/4554
摘要： A semiconductor package includes a carrier strip having a die cavity and bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip. In one embodiment, the semiconductor die is mounted using a die attach adhesive. In one embodiment, a top surface of the first semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. A metal layer is disposed over the carrier strip to form a package bump and a plated interconnect between the package bump and a contact pad of the first semiconductor die. An underfill material is disposed in the die cavity between the first semiconductor die and a surface of the die cavity. A passivation layer is disposed over the first semiconductor die and exposes a contact pad of the first semiconductor die. An encapsulant is disposed over the carrier strip.
摘要翻译： 半导体封装包括具有模腔和凸起腔的载体条。 半导体管芯安装在载体条的模腔中。 在一个实施例中，使用管芯附着粘合剂安装半导体管芯。 在一个实施例中，第一半导体管芯的顶表面与载体带的靠近模腔的顶表面近似共面。 金属层设置在载体带上方以形成封装凸块和在封装凸块与第一半导体管芯的接触焊盘之间的电镀互连。 在第一半导体管芯和模腔的表面之间的模腔中设置底部填充材料。 钝化层设置在第一半导体管芯上并且暴露第一半导体管芯的接触焊盘。 密封剂设置在载体条上。
-
9.发明申请Semiconductor Device and Method of Forming a Wafer Level Package with Top and Bottom Solder Bump Interconnection 有权半导体器件和形成具有顶部和底部焊料凹凸互连的晶片级封装的方法公开(公告)号：US20100072599A1
公开(公告)日：2010-03-25
申请号：US12410213
申请日：2009-03-24
申请人： Zigmund R. Camacho , Lionel Chien Hui Tay , Henry D. Bathan , Dioscoro A. Merilo , Jeffrey D. Punzalan
发明人： Zigmund R. Camacho , Lionel Chien Hui Tay , Henry D. Bathan , Dioscoro A. Merilo , Jeffrey D. Punzalan
IPC分类号： H01L25/065 , H01L21/56 , H01L23/48
CPC分类号： H01L23/49811 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/5389 , H01L24/11 , H01L24/24 , H01L24/48 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L2221/68345 , H01L2221/68359 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/19 , H01L2224/20 , H01L2224/211 , H01L2224/24145 , H01L2224/24998 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/82007 , H01L2224/83005 , H01L2225/06524 , H01L2225/06527 , H01L2225/06568 , H01L2225/06582 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/04941 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15311 , H01L2924/15331 , H01L2924/15747 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
摘要： A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.
摘要翻译： 通过在铜载体上形成焊料凸块制成半导体器件。 在铜载体中形成焊接捕获压痕以接收焊料凸块。 使用芯片附着粘合剂将半导体管芯安装到铜载体上。 半导体管芯具有形成在其有源表面上的接触焊盘。 封装剂沉积在铜载体，焊料凸块和半导体芯片上。 去除一部分密封剂以暴露焊料凸块和接触垫。 在密封剂上形成导电层以连接焊料凸块和接触焊盘。 导电层作为再分配层工作，以将电信号从焊料凸块路由到接触焊盘。 铜载体被去除。 在导电层和密封剂之上形成绝缘层。 多个半导体器件可以堆叠并通过焊料凸块电连接。
-
10.发明授权Semiconductor device and method of forming a wafer level package with top and bottom solder bump interconnection 有权半导体器件和形成具有顶部和底部焊料凸块互连的晶片级封装的方法公开(公告)号：US08546189B2
公开(公告)日：2013-10-01
申请号：US12410213
申请日：2009-03-24
申请人： Zigmund R. Camacho , Lionel Chien Hui Tay , Henry D. Bathan , Jeffrey D. Punzalan , Dioscoro A. Merilo
发明人： Zigmund R. Camacho , Lionel Chien Hui Tay , Henry D. Bathan , Jeffrey D. Punzalan , Dioscoro A. Merilo
CPC分类号： H01L23/49811 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/5389 , H01L24/11 , H01L24/24 , H01L24/48 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L2221/68345 , H01L2221/68359 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/19 , H01L2224/20 , H01L2224/211 , H01L2224/24145 , H01L2224/24998 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/82007 , H01L2224/83005 , H01L2225/06524 , H01L2225/06527 , H01L2225/06568 , H01L2225/06582 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/04941 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15311 , H01L2924/15331 , H01L2924/15747 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
摘要： A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.
摘要翻译： 通过在铜载体上形成焊料凸块制成半导体器件。 在铜载体中形成焊接捕获压痕以接收焊料凸块。 使用芯片附着粘合剂将半导体管芯安装到铜载体上。 半导体管芯具有形成在其有源表面上的接触焊盘。 封装剂沉积在铜载体，焊料凸块和半导体芯片上。 去除一部分密封剂以暴露焊料凸块和接触垫。 在密封剂上形成导电层以连接焊料凸块和接触焊盘。 导电层作为再分配层工作，以将电信号从焊料凸块路由到接触焊盘。 铜载体被去除。 在导电层和密封剂之上形成绝缘层。 多个半导体器件可以堆叠并通过焊料凸块电连接。
-
-
-
-
-
-
-
-
-
搜索结果
99 条记录 (耗时 0.026 秒)
