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    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
    1.
    发明公开
    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR 审中-公开

    公开(公告)号：US20240363805A1

    公开(公告)日：2024-10-31

    申请号：US18485547

    申请日：2023-10-12

    申请人： ENKRIS SEMICONDUCTOR, INC.

    发明人： Kai CHENG

    IPC分类号： H01L33/32 ,  H01L33/00 ,  H01L33/12

    CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/12

    摘要： Disclosed are a semiconductor structure and a manufacturing method therefor. The semiconductor structure includes a first substrate; a mask layer, located on the first substrate; where the mask layer is provided with a window exposing the first substrate, the window includes an open end, and an area of an orthographic projection of the open end on a plane where the first substrate is located is less than an area of an orthographic projection of the window on the plane where the first substrate is located. When a first epitaxial layer is epitaxially grown on the second substrate, a dislocation of the first epitaxial layer terminates at the sidewall, the dislocation may not continue to extend along with a growth of the first epitaxial layer, so that a dislocation density of the semiconductor structure may be reduced, and device characteristic may be improved.

    Light emitting diode chip and method for manufacturing the same, display device
    5.
    发明授权
    Light emitting diode chip and method for manufacturing the same, display device 有权

    公开(公告)号：US12074258B2

    公开(公告)日：2024-08-27

    申请号：US17332852

    申请日：2021-05-27

    申请人： BOE TECHNOLOGY GROUP CO., LTD.

    发明人： Lizhen Zhang ,  Guangcai Yuan ,  Qi Yao ,  Mingxing Wang

    IPC分类号： H01L33/38 ,  H01L27/15 ,  H01L33/00 ,  H01L33/12 ,  H01L33/62

    CPC分类号： H01L33/382 ,  H01L27/156 ,  H01L33/005 ,  H01L33/12 ,  H01L33/62 ,  H01L2933/0016

    摘要： An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.

    DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD THEREFOR
    7.
    发明公开
    DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD THEREFOR 审中-公开

    公开(公告)号：US20240266472A1

    公开(公告)日：2024-08-08

    申请号：US18691668

    申请日：2021-09-14

    申请人： LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

    发明人： Junoh SHIN ,  Jeonghyo KWON

    IPC分类号： H01L33/38 ,  H01L25/075 ,  H01L33/12 ,  H01L33/20 ,  H01L33/62

    CPC分类号： H01L33/382 ,  H01L25/0753 ,  H01L33/12 ,  H01L33/20 ,  H01L33/62

    摘要： The present invention is applicable to display device-related technical fields and, for example, relates to a display device using micro LED (Light Emitting Diode) and a method of manufacturing the same. The present invention includes a substrate including a pixel area and a pad area located around the pixel area; a barrier layer located on the substrate and defining a plurality of unit pixel areas within the pixel area; a stress separation line located between the unit pixel areas on the barrier layer; a first electrode located in the unit pixel area; a semiconductor light emitting device in which a first type electrode is electrically connected to the first electrode within the unit pixel area; a coating layer formed on the semiconductor light emitting device and the barrier layer; and a second electrode electrically connected to the type second electrode of the semiconductor light emitting device on the coating layer.

    Micro LED display device
    9.
    发明授权
    Micro LED display device 有权

    公开(公告)号：US12057528B2

    公开(公告)日：2024-08-06

    申请号：US17543836

    申请日：2021-12-07

    申请人： PlayNitride Display Co., Ltd.

    发明人： Yu-Yun Lo ,  Bo-Wei Wu ,  Chang-Feng Tsai

    IPC分类号： H01L33/48 ,  H01L25/075 ,  H01L33/12 ,  H01L33/38

    CPC分类号： H01L33/483 ,  H01L25/0753 ,  H01L33/12 ,  H01L33/382

    摘要： A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.