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公开(公告)号：CN102646610B
公开(公告)日：2014-11-12
申请号：CN201210031949.9
申请日：2012-02-13
Applicant: 富士通株式会社
IPC: H01L21/60 , H01L23/495 , H01L23/29 , H01L21/56
CPC classification number: H01L23/49513 , H01L23/3107 , H01L23/49562 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29111 , H01L2224/29147 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/13064 , H01L2924/15738 , H01L2924/15747 , H01L2924/15763 , H01L2924/181 , H01L2924/00 , H01L2924/01022 , H01L2924/01028 , H01L2924/01046 , H01L2924/00012 , H01L2924/00014 , H01L2924/3512
Abstract: 本发明提供一种半导体器件、用于制造半导体器件的方法以及电源装置，所述用于制造半导体器件的方法包括：将包含具有至少一个具有金属的外表面的纤维状材料的片置于基板的半导体芯片安装区域上；在所述半导体芯片安装区域上形成包含易熔金属的接合层；将半导体芯片置于所述半导体芯片安装区域上；以及通过加热利用所述包含易熔金属的接合层将所述半导体芯片接合到所述半导体芯片安装区域。
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公开(公告)号：CN102646650A
公开(公告)日：2012-08-22
申请号：CN201210033879.0
申请日：2012-02-15
Applicant: 富士通株式会社
IPC: H01L23/373 , H01L23/31 , H01L21/58 , H01L21/60
CPC classification number: H01L24/32 , H01L23/3121 , H01L23/49513 , H01L23/49568 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/0603 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29211 , H01L2224/29239 , H01L2224/29244 , H01L2224/29247 , H01L2224/29255 , H01L2224/29264 , H01L2224/29269 , H01L2224/29311 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29369 , H01L2224/29565 , H01L2224/2969 , H01L2224/3201 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/73265 , H01L2224/83051 , H01L2224/83192 , H01L2224/838 , H01L2224/83815 , H01L2224/8384 , H01L2224/83986 , H01L2224/92247 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1033 , H01L2924/13055 , H01L2924/13064 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2924/3512
Abstract: 一种半导体器件包括：支持基材、以及利用粘合材料与支持基材接合的半导体元件，所述粘合材料包括：与支持基材和半导体元件接触的多孔金属材料、以及填充于多孔金属材料的至少一部分孔中的钎料。
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公开(公告)号：CN101483144A
公开(公告)日：2009-07-15
申请号：CN200910006680.7
申请日：2003-04-22
Applicant: 富士通株式会社
IPC: H01L21/60
CPC classification number: H01L24/83 , H01L21/4853 , H01L24/11 , H01L24/29 , H01L24/45 , H01L2224/1134 , H01L2224/1184 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/29298 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73104 , H01L2224/749 , H01L2224/75 , H01L2224/75252 , H01L2224/83191 , H01L2224/838 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0781 , H01L2924/15788 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/29099
Abstract: 本发明使半导体基板(1)的背面(1b)吸附在基板支承台(11)的支承面(11a)上而使其固定。这时，由于对背面(1b)的平整化处理，成为半导体基板(1)的厚度一定的状态，背面(1b)由于向支承面(11a)吸附而被强制性地成为没有起伏的状态，这样，背面(1b)成为表面(1a)的平整化的基准面。在该状态下，使用刀具(10)对表面(1a)中的各Au突起(2)和抗蚀剂掩膜(12)的表层进行切削加工，进行平整化处理，使得各Au突起(2)和抗蚀剂掩膜(12)的表面连续且平整。这样，取代CMP，能够廉价且高速地使形成在基板上的微细的凸块的表面平整化。本发明涉及一种半导体器件及其制法、基板处理装置和半导体制造装置。
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Patent Agency Ranking
公开(公告)号：CN1685489A
公开(公告)日：2005-10-19
申请号：CN03822757.6
申请日：2003-04-22
Applicant: 富士通株式会社
IPC: H01L21/60
CPC classification number: H01L24/83 , H01L21/4853 , H01L24/11 , H01L24/29 , H01L24/45 , H01L2224/1134 , H01L2224/1184 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/29298 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73104 , H01L2224/749 , H01L2224/75 , H01L2224/75252 , H01L2224/83191 , H01L2224/838 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0781 , H01L2924/15788 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/29099
Abstract: 本发明使半导体基板(1)的背面(1b)吸附在基板支承台(11)的支承面(11a)上而使其固定。这时，由于对背面(1b)的平整化处理，成为半导体基板(1)的厚度一定的状态，背面(1b)由于向支承面(11a)吸附而被强制性地成为没有起伏的状态，这样，背面(1b)成为表面(1a)的平整化的基准面。在该状态下，使用刀具(10)对表面(1a)中的各Au突起(2)和抗蚀剂掩膜(12)的表层进行切削加工，进行平整化处理，使得各Au突起(2)和抗蚀剂掩膜(12)的表面连续且平整。这样，取代CMP，能够廉价且高速地使形成在基板上的微细的凸块的表面平整化。
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公开(公告)号：CN102651352A
公开(公告)日：2012-08-29
申请号：CN201210034475.3
申请日：2012-02-15
Applicant: 富士通株式会社
IPC: H01L23/31 , H01L23/367 , H01L23/48 , H01L21/56 , H01L21/60
CPC classification number: H01L24/83 , H01L21/78 , H01L23/13 , H01L23/142 , H01L23/3121 , H01L23/367 , H01L23/3737 , H01L23/49822 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/92 , H01L2224/0345 , H01L2224/03452 , H01L2224/04026 , H01L2224/04042 , H01L2224/05554 , H01L2224/05558 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/06155 , H01L2224/06181 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29118 , H01L2224/2912 , H01L2224/29139 , H01L2224/29147 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/32225 , H01L2224/3224 , H01L2224/32245 , H01L2224/33183 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48091 , H01L2224/48227 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48699 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48799 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/49175 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/8384 , H01L2224/83851 , H01L2224/92247 , H01L2224/94 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01082 , H01L2924/01083 , H01L2924/10161 , H01L2924/10253 , H01L2924/1026 , H01L2924/1033 , H01L2924/10344 , H01L2924/1047 , H01L2924/12032 , H01L2924/12042 , H01L2924/13064 , H01L2924/142 , H01L2924/15153 , H01L2924/00012 , H01L2924/00014 , H01L2224/03 , H01L2924/00
Abstract: 本发明提供一种半导体装置、用于制造半导体装置的方法以及电子器件，所述半导体装置包括：包括第一电极的半导体器件；包括第二电极和凹部的衬底；和散热粘合材料，该散热粘合材料将半导体器件固定在凹部中，以将第一电极布置为靠近第二电极，其中第一电极耦接到第二电极，并且散热粘合材料覆盖半导体器件的底表面和侧表面的至少一部分。
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公开(公告)号：CN102646610A
公开(公告)日：2012-08-22
申请号：CN201210031949.9
申请日：2012-02-13
Applicant: 富士通株式会社
IPC: H01L21/60 , H01L23/495 , H01L23/29 , H01L21/56
CPC classification number: H01L23/49513 , H01L23/3107 , H01L23/49562 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29111 , H01L2224/29147 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/13064 , H01L2924/15738 , H01L2924/15747 , H01L2924/15763 , H01L2924/181 , H01L2924/00 , H01L2924/01022 , H01L2924/01028 , H01L2924/01046 , H01L2924/00012 , H01L2924/00014 , H01L2924/3512
Abstract: 本发明提供一种半导体器件、用于制造半导体器件的方法以及电源装置，所述用于制造半导体器件的方法包括：将包含具有至少一个具有金属的外表面的纤维状材料的片置于基板的半导体芯片安装区域上；在所述半导体芯片安装区域上形成包含易熔金属的接合层；将半导体芯片置于所述半导体芯片安装区域上；以及通过加热利用所述包含易熔金属的接合层将所述半导体芯片接合到所述半导体芯片安装区域。
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公开(公告)号：CN102637650A
公开(公告)日：2012-08-15
申请号：CN201210026467.4
申请日：2012-02-07
Applicant: 富士通株式会社
IPC: H01L23/29 , H01L23/31 , H01L29/778 , H01L21/56 , H01L21/335 , H02M7/217 , H02M3/155
Abstract: 本发明涉及一种半导体装置、一种用于制造半导体装置的方法以及一种电源。本发明的半导体装置包括：半导体芯片，包括氮化物半导体分层结构，该氮化物半导体分层结构包括载流子输运层和载流子供给层；半导体芯片上的第一树脂层，该第一树脂层包括偶联剂；第一树脂层上的第二树脂层，该第二树脂层包括表面活性剂；以及密封树脂层，用于利用第一树脂层和第二树脂层对半导体芯片进行密封。
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公开(公告)号：CN100477139C
公开(公告)日：2009-04-08
申请号：CN03822757.6
申请日：2003-04-22
Applicant: 富士通株式会社
IPC: H01L21/60
CPC classification number: H01L24/83 , H01L21/4853 , H01L24/11 , H01L24/29 , H01L24/45 , H01L2224/1134 , H01L2224/1184 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/29298 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73104 , H01L2224/749 , H01L2224/75 , H01L2224/75252 , H01L2224/83191 , H01L2224/838 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0781 , H01L2924/15788 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/29099
Abstract: 本发明使半导体基板(1)的背面(1b)吸附在基板支承台(11)的支承面(11a)上而使其固定。这时，由于对背面(1b)的平整化处理，成为半导体基板(1)的厚度一定的状态，背面(1b)由于向支承面(11a)吸附而被强制性地成为没有起伏的状态，这样，背面(1b)成为表面(1a)的平整化的基准面。在该状态下，使用刀具(10)对表面(1a)中的各Au突起(2)和抗蚀剂掩膜(12)的表层进行切削加工，进行平整化处理，使得各Au突起(2)和抗蚀剂掩膜(12)的表面连续且平整。这样，取代CMP，能够廉价且高速地使形成在基板上的微细的凸块的表面平整化。
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