公开(公告)号：EP3172349A2

公开(公告)日：2017-05-31

申请号：EP15744284.9

申请日：2015-07-15

申请人： Alpha Assembly Solutions Inc.

发明人： CHOUDHURY, Pritha ,  DE AVILA RIBAS, Morgana ,  MUKHERJEE, Sutapa ,  SARKAR, Siuli ,  PANDHER, Ranjit ,  BHATKAL, Ravindra ,  SINGH, Bawa

IPC分类号： C22C13/00 ,  C22C13/02 ,  B23K1/00 ,  B23K1/002 ,  B23K1/005 ,  B23K1/08 ,  B23K35/00 ,  B23K35/02 ,  B23K35/26

CPC分类号： B23K35/262 ,  B23K1/0016 ,  B23K1/002 ,  B23K1/0056 ,  B23K1/085 ,  B23K35/00 ,  B23K35/0222 ,  B23K35/0227 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/26 ,  B23K2201/40 ,  B23K2201/42 ,  C22C13/00 ,  C22C13/02 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29117 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/2918 ,  H01L2224/83815 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01058

摘要： A lead-free, antimony-free solder alloy_suitable for use in electronic soldering applications. The solder alloy comprises (a) from 1 to 4 wt. % silver; (b) from 0.5 to 6 wt. % bismuth; (c) from 3.55 to 15 wt. % indium, (d) 3 wt. % or less of copper; (e) one or more optional elements and the balance tin, together with any unavoidable impurities.

摘要翻译： 一种无铅无锑焊料合金，包括：（a）1-4重量％银（b）0.5-6重量％铋（c）3.55-15重量％铟（d）3重量％ （e）任选的一种或多种以下元素0至1重量％的镍0至1重量％的钛0至1重量％的锰0至1重量％的稀土，例如 作为铈0-1重量％的铬0-1重量％的锗0-1重量％的镓0-1重量％的钴0-1重量％的铁0-1重量％的铝0 至1重量％的磷0至1重量％的金0至1重量％的碲0至1重量％的硒0至1重量％的钙0至1重量％的钒0至1 （重量）的0-1％（重量）的铂0-1％（重量）的镁（f）余量的锡以及任何不可避免的杂质。

公开(公告)号：EP2920810A2

公开(公告)日：2015-09-23

申请号：EP13811692.6

申请日：2013-12-02

申请人： Invensas Corporation

发明人： UZOH, Cyprian, Emeka

IPC分类号： H01L23/485 ,  H01L23/498 ,  H01L21/60 ,  H05K3/34 ,  H01L23/10 ,  H01L21/50

CPC分类号： H05K13/046 ,  H01L21/4853 ,  H01L21/50 ,  H01L21/76898 ,  H01L23/10 ,  H01L23/481 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/98 ,  H01L2224/02372 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1319 ,  H01L2224/14131 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/16501 ,  H01L2224/16505 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29138 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81075 ,  H01L2224/8112 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81825 ,  H01L2224/83075 ,  H01L2224/8312 ,  H01L2224/83193 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/381 ,  H01L2924/04953 ,  H01L2924/01071 ,  H01L2924/01042 ,  H01L2924/01015 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01031 ,  H01L2924/01034 ,  H01L2924/00012 ,  H01L2924/07025 ,  H01L2224/05552

摘要： A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

公开(公告)号：EP2606509A1

公开(公告)日：2013-06-26

申请号：EP11819399.4

申请日：2011-08-16

申请人： BYD Company Limited ,  Shenzhen BYD Auto R&D Company Limited

发明人： LIU, Yingce ,  HUO, Dongming ,  SUN, Tianbao

IPC分类号： H01L21/58 ,  H01L33/48

CPC分类号： H01L33/40 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/641 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05138 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/27472 ,  H01L2224/27622 ,  H01L2224/27831 ,  H01L2224/29011 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29018 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2924/01048 ,  H01L2924/01034

摘要： A semiconductor chip assembly and a method for forming the same are provided. The semiconductor chip assembly comprises: a semiconductor chip (20), a substrate (10), a first layer (203) formed on a surface of the substrate (10), in which one of the first layer (203) and the second layer (204) has an opening (205) therein; and a second layer (204) formed on a surface of the semiconductor chip (20) and connected to the first layer (203) by eutectic bonding.

公开(公告)号：EP2278032A3

公开(公告)日：2012-06-20

申请号：EP10004458.5

申请日：2010-04-27

申请人： Hitachi Chemical Company, Ltd.

发明人： Yasuda, Yuusuke ,  Morita, Toshiaki ,  Ide, Eiichi ,  Inada, Teiichi

IPC分类号： C22C1/05 ,  B22F1/00 ,  H01B1/22

CPC分类号： B22F1/0074 ,  C22C1/05 ,  H01B1/22 ,  H01L21/565 ,  H01L23/049 ,  H01L23/10 ,  H01L23/13 ,  H01L23/142 ,  H01L23/15 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/34 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/498 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/27334 ,  H01L2224/29005 ,  H01L2224/2901 ,  H01L2224/29078 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/29376 ,  H01L2224/29378 ,  H01L2224/29381 ,  H01L2224/29384 ,  H01L2224/29387 ,  H01L2224/29893 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48839 ,  H01L2224/48855 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/832 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/0541 ,  H01L2924/0501 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01018 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/2076 ,  H01L2924/01202 ,  H01L2224/83205

摘要： The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles (202), (B) silver oxide (203), and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.

公开(公告)号：EP1774589B1

公开(公告)日：2010-07-28

申请号：EP05782182.9

申请日：2005-06-29

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： MORICEAU, Hubert ,  FEUILLET, Guy ,  POCAS, Stéphane

IPC分类号： H01L21/98 ,  H01L25/065 ,  H01L21/18

CPC分类号： H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/29082 ,  H01L2224/29117 ,  H01L2224/29138 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/10329 ,  Y10T156/10 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention relates to a method for assembling, by molecular adhesion, a first substrate and a second substrate along the contact faces, the contact face of the first substrate having an electrically conductive layer on at least a portion of its surface. The inventive method comprises the following steps: depositing a connecting layer on at least a portion of the electrically conductive layer, said connecting layer being capable of ensuring a molecular adhesion with an area of the contact face of the second substrate and capable of being combined with the electrically conductive layer in order to form a conductive alloy; placing the connecting layer of the first substrate in contact with the area of the contact face of the second substrate and bonding it by molecular adhesion; transforming, on all or a portion of its width, all or part of the electrically conductive layer with all or part of the connecting layer and with at least a portion of the width of the area of the contact face over all or part of the surface of the second substrate in order to form a conductive alloy area.